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Seasonal changes in force production accuracy as a measure of kinesthesia in motorcyclists

Human movement, 2020, Vol.21 (1), p.15-21

2020

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Micro- and Nanoelectronics: Emerging Device Challenges and Solutions

1st edition., 2017

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Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1248-1257

2019

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Application of e-Beam Voltage Contrast Technique for Overlay Improvement and Process Window Control in Multi-Patterning Interconnect Scheme

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.870-875

2022

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Micro- and Nanoelectronics

Tomasz Brozek

2017

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Generation of hole traps in thin silicon oxide layers under high-field electron injection

Applied physics letters, 1996-03, Vol.68 (13), p.1826-1828

1996

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Efficient metrology for edge placement error and process window characterization using design for inspection methodology

Journal of Micro/Nanopatterning, Materials, and Metrology, 2023-10, Vol.22 (4)

2023

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Boron penetration effect on gate oxide reliability of 50 Å PMOS devices

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.637-640

2000

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Plasma damage in thin gate MOS dielectrics and its effect on device characteristics and reliability

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.625-631

2000

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Advanced Silicon Technologies: Design Consequences of Scaling Solutions for Devices

2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 2024, p.11-14

Brozek, Tomasz

2024

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Simple method for evaluating process-induced charging damage to the gate oxide of metal-oxide-semiconductor devices

Applied physics letters, 1996-09, Vol.69 (12), p.1770-1772

1996

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Cryptographic techniques used to provide integrity of digital content in long-term storage

Mathematica Applicanda, 2011-06, Vol.39 (1)

2011

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In-Product BTI Aging Sensor for Reliability Screening and Early Detection of Material at Risk

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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Short-Flow Compatible Wafer-Level Reliability Assessment and Monitoring for PCM Embedded Non-Volatile Memory

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection

Microelectronic engineering, 1997-06, Vol.36 (1), p.161-164

1997

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Dielectric integrity of thin thermal oxides on silicon

Microelectronics and reliability, 1993, Vol.33 (11), p.1637-1656

1993

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Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions

Microelectronics and reliability, 1998-01, Vol.38 (1), p.73-79

1998

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DFI Filler Cells - New Embedded Type of Test Structures for Non-Contact Detection of Electrical Defects on Product Wafers

2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS), 2022, p.1-6

2022

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Characterization of Hole Traps Generated by Electron Injection in Thin SiO2 Films

MRS proceedings, 1997, Vol.473

1997

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Effect of radiation on breakdown of electrically pre-degraded oxides in MOS structures

Microelectronic engineering, 1995-06, Vol.28 (1), p.349-352

1995

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A model for threshold voltage shift under positive and negative high-field electron injection in complementary metal-oxide-semiconductor (CMOS) transistors

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.969-972

1995

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Contact Chains for FinFET Technology Characterization

IEEE transactions on semiconductor manufacturing, 2015-08, Vol.28 (3), p.205-212

2015

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PII: S0026-2714(04)00208-2

Microelectronics and reliability, 2005, Vol.45 (1), p.1-2

Brozek, Tomasz

2005

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Short Flow Characterization Vehicle (Test Chip) Usage in Advanced Technology Development and Yield Improvement

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018, p.242-244

Brozek, Tomasz

2018

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Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures

Microelectronics, 1994-10, Vol.25 (7), p.507-514

1994

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Seasonal changes in force production accuracy as a measure of kinesthesia in motorcyclists

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions

Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories

Application of e-Beam Voltage Contrast Technique for Overlay Improvement and Process Window Control in Multi-Patterning Interconnect Scheme

Micro- and Nanoelectronics

Generation of hole traps in thin silicon oxide layers under high-field electron injection

Efficient metrology for edge placement error and process window characterization using design for inspection methodology

Boron penetration effect on gate oxide reliability of 50 Å PMOS devices

Plasma damage in thin gate MOS dielectrics and its effect on device characteristics and reliability

Advanced Silicon Technologies: Design Consequences of Scaling Solutions for Devices

Simple method for evaluating process-induced charging damage to the gate oxide of metal-oxide-semiconductor devices

Cryptographic techniques used to provide integrity of digital content in long-term storage

In-Product BTI Aging Sensor for Reliability Screening and Early Detection of Material at Risk

Short-Flow Compatible Wafer-Level Reliability Assessment and Monitoring for PCM Embedded Non-Volatile Memory

Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection

Dielectric integrity of thin thermal oxides on silicon

Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions

DFI Filler Cells - New Embedded Type of Test Structures for Non-Contact Detection of Electrical Defects on Product Wafers

Characterization of Hole Traps Generated by Electron Injection in Thin SiO2 Films

Effect of radiation on breakdown of electrically pre-degraded oxides in MOS structures

A model for threshold voltage shift under positive and negative high-field electron injection in complementary metal-oxide-semiconductor (CMOS) transistors

Contact Chains for FinFET Technology Characterization

PII: S0026-2714(04)00208-2

Short Flow Characterization Vehicle (Test Chip) Usage in Advanced Technology Development and Yield Improvement

Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures

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