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Applications of depth-resolved cathodoluminescence spectroscopy

Journal of physics. D, Applied physics, 2012-05, Vol.45 (18), p.183001-1-27

Brillson, L J

2012

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Direct observation of a two-dimensional hole gas at oxide interfaces

Nature materials, 2018-03, Vol.17 (3), p.231-236

2018

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Applied physics letters, 2005-07, Vol.87 (1), p.012102-012102-3

2005

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An Essential Guide to Electronic Material Surfaces and Interfaces

Brillson, Leonard J

1, 2016

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Nanostructure growth-induced defect formation and band bending at ZnO surfaces

Surface science, 2011-05, Vol.605 (9), p.L20-L23

2011

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Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-09, Vol.19 (5), p.1762-1768

Brillson, L. J.

2001

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Process dependence of H passivation and doping in H-implanted ZnO

Journal of physics. D, Applied physics, 2013-02, Vol.46 (5), p.55107-1-7

2013

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Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries

Applied physics letters, 2005-04, Vol.86 (16), p.162105-162105-3

2005

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Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

Applied surface science, 2008-10, Vol.254 (24), p.8000-8004

2008

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Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4768-4773

2009

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First-Principles Studies of Metal (111)/ZnO{0001} Interfaces

Journal of electronic materials, 2008-05, Vol.37 (5), p.743-748

2008

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Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies

Applied physics letters, 2008-06, Vol.92 (22)

2008

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Defect segregation and optical emission in ZnO nano- and microwires

Nanoscale, 2016-04, Vol.8 (14), p.7631-7637

2016

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Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1934-1941

2003

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Optical identification of oxygen vacancy formation at SrTiO3-(Ba,Sr)TiO3 heterostructures

Journal of physics. D, Applied physics, 2014-06, Vol.47 (25)

2014

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Dominant effect of near-interface native point defects on ZnO Schottky barriers

Applied physics letters, 2007-03, Vol.90 (10), p.102116-102116-3

2007

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Strain-driven disproportionation at a correlated oxide metal-insulator transition

Physical review. B, 2020-03, Vol.101 (12), p.1, Article 121105

2020

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Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Journal of electronic materials, 2018-09, Vol.47 (9), p.4980-4986

2018

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Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si

Applied physics letters, 2011-04, Vol.98 (17)

2011

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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Journal of applied physics, 2003-12, Vol.94 (12), p.7611-7615

2003

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Depth-resolved subsurface defects in chemically etched SrTiO3

Applied physics letters, 2009-03, Vol.94 (9)

2009

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Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers

Applied physics letters, 2005-11, Vol.87 (19)

2005

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Control of Li configuration and electrical properties of Li-doped ZnO

Journal of physics. D, Applied physics, 2012-09, Vol.45 (37), p.375301-1-7

2012

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Electrical and optical properties of GaN/Al2O3 interfaces

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13337-13344

2002

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Applications of depth-resolved cathodoluminescence spectroscopy

Direct observation of a two-dimensional hole gas at oxide interfaces

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

An Essential Guide to Electronic Material Surfaces and Interfaces

Nanostructure growth-induced defect formation and band bending at ZnO surfaces

Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films

Process dependence of H passivation and doping in H-implanted ZnO

Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries

Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation

First-Principles Studies of Metal (111)/ZnO{0001} Interfaces

Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies

Defect segregation and optical emission in ZnO nano- and microwires

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

Optical identification of oxygen vacancy formation at SrTiO3-(Ba,Sr)TiO3 heterostructures

Dominant effect of near-interface native point defects on ZnO Schottky barriers

Strain-driven disproportionation at a correlated oxide metal-insulator transition

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Depth-resolved subsurface defects in chemically etched SrTiO3

Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers

Control of Li configuration and electrical properties of Li-doped ZnO

Electrical and optical properties of GaN/Al2O3 interfaces

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