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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

Materials science in semiconductor processing, 2019-05, Vol.94, p.64-69

2019

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A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Applied physics letters, 2015-06, Vol.106 (26)

2015

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Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers

2021 International Semiconductor Conference (CAS), 2021, p.125-128

2021

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Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Materials science forum, 2009, Vol.600-603, p.983-986

2009

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Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

Diamond and related materials, 2007-04, Vol.16 (4), p.1020-1024

2007

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Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Materials science forum, 2006-10, Vol.527-529, p.1087-1090

2006

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Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Materials science forum, 2007-01, Vol.556-557, p.865-868

2007

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Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices

2024 International Semiconductor Conference (CAS), 2024, p.29-36

2024

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An industrial temperature probe based on SiC diodes

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.2, p.409-412

2010

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Low Current Constant-gm Technique for Rail-to-Rail Operational Amplifiers

2020 International Semiconductor Conference (CAS), 2020, p.253-256

2020

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Prediction algorithm to control the temperature inside a laboratory furnace used for semiconductor devices characterization

2017 International Semiconductor Conference (CAS), 2017, p.257-260

2017

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Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2148-2153

2001

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A Precision Current Sense Amplifier With Disable Function

2020 International Semiconductor Conference (CAS), 2020, p.59-62

2020

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A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Solid-state electronics, 2003-04, Vol.47 (4), p.607-615

2003

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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Materials science forum, 2018-06, Vol.924, p.967-970

2018

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Block commutation vs Sinusoidal commutation for BLDC motors

2020 International Semiconductor Conference (CAS), 2020, p.89-92

2020

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I/O Cells Latchup Immunity: Methodology for Compact Layout Rules in an Advanced CMOS Technology

2020 International Semiconductor Conference (CAS), 2020, p.115-118

2020

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Unipolar PWM vs Bipolar PWM in Three Phase Block Commutation

2020 International Semiconductor Conference (CAS), 2020, p.169-172

2020

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Electrical defects in grown oxide on SiC and from the oxide/SiC interface

2020 International Semiconductor Conference (CAS), 2020, p.37-40

2020

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Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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The electron irradiation effects on silicon gate dioxide used for power MOS devices

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1015-1018

2001

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A Tale of Two Circuits - Comparing Performances Of Input Adapters As Interface Elements For High Voltage Applications

2020 International Semiconductor Conference (CAS), 2020, p.119-122

2020

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An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Materials Science Forum, 2016-05, Vol.858, p.577-581

2016

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An Effective Method on Vibration Immunity for Inclinometer based on MEMS Accelerometer

2020 International Semiconductor Conference (CAS), 2020, p.105-108

2020

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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices

An industrial temperature probe based on SiC diodes

Low Current Constant-gm Technique for Rail-to-Rail Operational Amplifiers

Prediction algorithm to control the temperature inside a laboratory furnace used for semiconductor devices characterization

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

A Precision Current Sense Amplifier With Disable Function

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Block commutation vs Sinusoidal commutation for BLDC motors

I/O Cells Latchup Immunity: Methodology for Compact Layout Rules in an Advanced CMOS Technology

Unipolar PWM vs Bipolar PWM in Three Phase Block Commutation

Electrical defects in grown oxide on SiC and from the oxide/SiC interface

Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

The electron irradiation effects on silicon gate dioxide used for power MOS devices

A Tale of Two Circuits - Comparing Performances Of Input Adapters As Interface Elements For High Voltage Applications

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

An Effective Method on Vibration Immunity for Inclinometer based on MEMS Accelerometer

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