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Controlled Grain Growth for High Performance Nanoparticle-Based Kesterite Solar Cells

Chemistry of materials, 2016-11, Vol.28 (21), p.7703-7714

2016

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Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material

Nature communications, 2017-09, Vol.8 (1), p.682-8, Article 682

2017

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Design of projected phase-change memory mushroom cells for low-resistance drift

MRS bulletin, 2023-03, Vol.48 (3), p.228-236

2023

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Analysis of loss mechanisms in Ag2ZnSnSe4 Schottky barrier photovoltaics

Journal of applied physics, 2017-05, Vol.121 (17)

2017

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Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference

Advanced electronic materials, 2023-06, Vol.9 (6), p.n/a

2023

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Effect of In-situ Capping on Phase Change Memory Device Performance : AEPM: Advance Equipment Processes and Materials

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2020, p.1-5

2020

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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks

Advanced intelligent systems, 2022-05, Vol.4 (5), p.n/a

2022

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Demonstration of transfer learning using 14 nm technology analog ReRAM array

Frontiers in electronics (Online), 2024-01, Vol.4

2024

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Improving efficiencies of Cu2ZnSnS4 nanoparticle based solar cells on flexible glass substrates

Thin solid films, 2017-11, Vol.642 (C), p.110-116

2017

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Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO x Diffusion Barrier

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3511-3516

2023

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Three Programming States in Bilayer Ga-Sb Phase Change Memory With AlOx Diffusion Barrier

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3511-3516

2023

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Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

Advanced materials (Weinheim), 2023-09, Vol.35 (37), p.e2201238-e2201238

2023

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Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Advanced functional materials, 2021-09, Vol.31 (37), p.n/a

2021

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Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory Computing

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6279-6285

2023

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CZTSe devices fabricated from CZTSSe nanoparticles

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2548-2551

2013

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Electrical and structural properties of binary Ga–Sb phase change memory alloys

Journal of applied physics, 2022-07, Vol.132 (3)

2022

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Flight Risk

Studies in arts and humanities, 2019-01, Vol.4 (2), p.161-178

2019

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HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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Programming Weights to Analog In-Memory Computing Cores by Direct Minimization of the Matrix-Vector Multiplication Error

IEEE journal on emerging and selected topics in circuits and systems, 2023-12, Vol.13 (4), p.1052-1061

2023

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Crystallization Properties of Al-Sb Alloys for Phase Change Memory Applications

ECS journal of solid state science and technology, 2021-07, Vol.10 (7), p.75008

2021

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Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics

Journal of applied physics, 2017-05, Vol.121 (17)

2017

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Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023)

Advanced electronic materials, 2023-06, Vol.9 (6), p.n/a

2023

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Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State

2021 Device Research Conference (DRC), 2021, p.1-2

2021

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Controlled Grain Growth for High Performance Nanoparticle-Based Kesterite Solar Cells

Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material

Design of projected phase-change memory mushroom cells for low-resistance drift

Analysis of loss mechanisms in Ag2ZnSnSe4 Schottky barrier photovoltaics

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference

Effect of In-situ Capping on Phase Change Memory Device Performance : AEPM: Advance Equipment Processes and Materials

Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks

Demonstration of transfer learning using 14 nm technology analog ReRAM array

Improving efficiencies of Cu2ZnSnS4 nanoparticle based solar cells on flexible glass substrates

Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO x Diffusion Barrier

Three Programming States in Bilayer Ga-Sb Phase Change Memory With AlOx Diffusion Barrier

Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory Computing

CZTSe devices fabricated from CZTSSe nanoparticles

Electrical and structural properties of binary Ga–Sb phase change memory alloys

A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference

Flight Risk

HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

Programming Weights to Analog In-Memory Computing Cores by Direct Minimization of the Matrix-Vector Multiplication Error

Crystallization Properties of Al-Sb Alloys for Phase Change Memory Applications

Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023)

Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State

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