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Role of resistance forces in Galileo’s experiments

European journal of physics, 2022-11, Vol.43 (6), p.65004

Breiland, W G

2022

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Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Applied physics letters, 2002-09, Vol.81 (11), p.1940-1942

2002

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A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance

Journal of applied physics, 1995-12, Vol.78 (11), p.6726-6736

1995

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Characterization of prompt flash signatures using high-speed broadband diode detectors

International journal of impact engineering, 2008-12, Vol.35 (12), p.1827-1835

2008

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Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Journal of crystal growth, 2008-03, Vol.310 (6), p.1062-1068

2008

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Temperature measurements of expansion products from shock compressed materials using high-speed spectroscopy

International journal of impact engineering, 2008-12, Vol.35 (12), p.1745-1755

2008

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Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy

Applied physics letters, 2002-09, Vol.81 (14), p.2626-2628

2002

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A surface kinetics model for the growth of Si1-xGex films from SiH4/GeH4 mixtures

Journal of applied physics, 1993-04, Vol.73 (7), p.3525-3530

1993

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In situ spectral reflectance monitoring of III-V epitaxy

Journal of electronic materials, 1994-02, Vol.23 (2), p.179-183

1994

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In situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

Journal of crystal growth, 1998-12, Vol.195 (1), p.181-186

1998

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Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

Journal of applied physics, 2004-04, Vol.95 (7), p.3453-3465

2004

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Laser studies of the reactivity of SiH with the surface of a depositing film

The Journal of chemical physics, 1989-08, Vol.91 (4), p.2627-2634

1989

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Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

IEEE photonics technology letters, 1996-10, Vol.8 (10), p.1285-1287

1996

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In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

Journal of crystal growth, 1998-12, Vol.195 (1-4), p.199-204

1998

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Gas chromatography-mass spectroscopy study of tert-butylarsine stability and purification

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.33-36

2000

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A model for low pressure chemical vapor deposition in a hot-wall tubular reactor

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-02, Vol.17 (1), p.163-171

1993

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Tertiarybutylarsine for metalorganic chemical vapor deposition growth of high purity, high uniformity films

Journal of electronic materials, 1997, Vol.26 (1), p.37-42

1997

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Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers

MRS bulletin, 2002-07, Vol.27 (7), p.520-524

2002

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Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor

Journal of crystal growth, 1994-12, Vol.145 (1), p.655-661

1994

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Organometallic vapor phase epitaxy (OMVPE)

Materials science & engineering. R, Reports : a review journal, 1999-02, Vol.24 (6), p.241-274

1999

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Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

Journal of electronic materials, 1997-10, Vol.26 (10), p.1178-1183

1997

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Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Journal of applied physics, 1988-04, Vol.63 (8), p.2808-2819

1988

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High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium

Journal of crystal growth, 1996-06, Vol.163 (3), p.212-219

1996

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Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Journal of the Electrochemical Society, 1991-06, Vol.138 (6), p.1806-1816

1991

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Pulsed UV laser Raman spectroscopy of silane in a linear-flow chemical vapor deposition reactor

Applied physics letters, 1983-02, Vol.42 (4), p.395-397

1983

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Role of resistance forces in Galileo’s experiments

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance

Characterization of prompt flash signatures using high-speed broadband diode detectors

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Temperature measurements of expansion products from shock compressed materials using high-speed spectroscopy

Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy

A surface kinetics model for the growth of Si1-xGex films from SiH4/GeH4 mixtures

In situ spectral reflectance monitoring of III-V epitaxy

In situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

Laser studies of the reactivity of SiH with the surface of a depositing film

Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

Gas chromatography-mass spectroscopy study of tert-butylarsine stability and purification

A model for low pressure chemical vapor deposition in a hot-wall tubular reactor

Tertiarybutylarsine for metalorganic chemical vapor deposition growth of high purity, high uniformity films

Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers

Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor

Organometallic vapor phase epitaxy (OMVPE)

Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor

Reactive sticking coefficients for silane and disilane on polycrystalline silicon

High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium

Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Pulsed UV laser Raman spectroscopy of silane in a linear-flow chemical vapor deposition reactor

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