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A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Applied physics letters, 2016-12, Vol.109 (24)

2016

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Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

Journal of crystal growth, 2017-03, Vol.461, p.10-15

2017

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Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Journal of applied physics, 2023-11, Vol.134 (19)

2023

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Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

Materials, 2022-12, Vol.15 (23), p.8602

2022

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La recherche dans les institutions patrimoniales : Sources matérielles et ressources numériques

Mélanie Roustan

2016

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A new lignocellulosic biomass deconstruction process combining thermo-mechano chemical action and bio-catalytic enzymatic hydrolysis in a twin-screw extruder

Industrial crops and products, 2014-04, Vol.55, p.258-266

2014

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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Les garanties de crédit de l’Union européenne avant et après la crise de la Covid-19 : rôle et impact

Revue d'économie financière, 2023-07, Vol.N° 150 (2), p.169-180

Brault, Julien

2023

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UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

Crystals (Basel), 2020-12, Vol.10 (12), p.1097

2020

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Study of nanolaser optical and structural properties at the nanometer scale

BIO web of conferences, 2024, Vol.129, p.32014

2024

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Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103 , 032102 (2013)]

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S)

2016

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AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JG01-08JG01-4

2013

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Blue Light-Emitting Diodes Grown on ZnO Substrates

Applied physics express, 2013-04, Vol.6 (4), p.42101

2013

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Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Applied physics letters, 2013-07, Vol.103 (3)

2013

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OR NOIR. LA GRANDE HISTOIRE DU PÉTROLE, Matthieu Auzanneau, Paris, La Découverte, 2015, 718 pages

Politique étrangère, 2015-07, Vol.Automne (3), p.XV-XV

Brault, Julien

2015

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Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Applied physics express, 2008-12, Vol.1, p.121101

2008

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Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-07, Vol.38 (4)

2020

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LE PÉTROLE. LE TROISIÈME CHOC ET LA MALÉDICTION PÉTROLIÈRE, Benoît Mafféi et Rodolphe Greggio, Paris, Economica, 2014, 202 pages

Politique étrangère, 2014-12, Vol.Hiver (4), p.XI-XI

Brault, Julien

2014

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal of applied physics, 2019-11, Vol.126 (20)

2019

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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer

Microelectronic engineering, 2022-06, Vol.262, p.111830, Article 111830

2022

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The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers

physica status solidi (b), 2024-08, Vol.261 (8), p.n/a

2024

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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Nanotechnology, 2021-03, Vol.32 (11), p.115703-115703

2021

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A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

La recherche dans les institutions patrimoniales : Sources matérielles et ressources numériques

A new lignocellulosic biomass deconstruction process combining thermo-mechano chemical action and bio-catalytic enzymatic hydrolysis in a twin-screw extruder

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Les garanties de crédit de l’Union européenne avant et après la crise de la Covid-19 : rôle et impact

UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

Study of nanolaser optical and structural properties at the nanometer scale

Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103 , 032102 (2013)]

Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Blue Light-Emitting Diodes Grown on ZnO Substrates

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

OR NOIR. LA GRANDE HISTOIRE DU PÉTROLE, Matthieu Auzanneau, Paris, La Découverte, 2015, 718 pages

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Photoassisted chemical smoothing of AlGaN surface after laser lift-off

LE PÉTROLE. LE TROISIÈME CHOC ET LA MALÉDICTION PÉTROLIÈRE, Benoît Mafféi et Rodolphe Greggio, Paris, Economica, 2014, 202 pages

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer

The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

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