UB Paderborn / Katalog / Suche / in CDI

High resolution ion scattering study of silicon oxynitridation

Applied physics letters, 1996-10, Vol.69 (18), p.2713-2715

1996

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Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates

Applied physics letters, 1991-08, Vol.59 (7), p.811-813

1991

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Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

Applied physics letters, 1997-06, Vol.70 (23), p.3119-3121

1997

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The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide

Journal of applied physics, 1997-07, Vol.82 (2), p.896-898

1997

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Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

Applied physics letters, 1994-08, Vol.65 (7), p.848-850

1994

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On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

Applied physics letters, 1998-01, Vol.72 (4), p.450-452

1998

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Nitrogen content of oxynitride films on Si(100)

Applied physics letters, 1994-06, Vol.64 (25), p.3473-3475

1994

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Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

Applied physics letters, 1995-09, Vol.67 (11), p.1600-1602

1995

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Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

Journal of applied physics, 1991-01, Vol.69 (2), p.745-751

1991

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Using cone structures for circuit partitioning into FPGA packages

IEEE transactions on computer-aided design of integrated circuits and systems, 1998-07, Vol.17 (7), p.592-600

1998

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IEEE_Xplore

Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

Microelectronic engineering, 1997-06, Vol.36 (1), p.29-32

1997

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Growth temperature dependence of the Si(001)/SiO2 interface width

Applied physics letters, 1994-02, Vol.64 (6), p.748-750

1994

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Nuclear reaction analysis of deuterium in ultrathin films of SiO2 on Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136-138, p.204-208

1998

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Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation

IEEE transactions on electron devices, 1996-06, Vol.43 (6), p.982-990

1996

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IEEE_Xplore

Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

Applied physics letters, 1992-03, Vol.60 (12), p.1468-1470

1992

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High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor deposition

Journal of applied physics, 1989-03, Vol.65 (6), p.2558-2560

1989

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Evaluation of microstructures associated with hardness indentations in InP

Journal of materials science, 1978-08, Vol.13 (8), p.1776-1780

Brasen, D.

1978

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Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

Journal of applied physics, 1995-05, Vol.77 (9), p.4746-4749

1995

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Excimer laser-induced deposition of InP: crystallographic and mechanistic studies

Journal of applied physics, 1985-09, Vol.58 (5), p.2022-2035

1985

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ArF excimer-laser-stimulated growth of polycrystalline GaAs thin films

Journal of applied physics, 1987-02, Vol.61 (4), p.1410-1414

1987

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Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process

Journal of applied physics, 1998-09, Vol.84 (5), p.2980-2982

1998

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Glass formation and switching in the SbSe systems

Journal of non-crystalline solids, 1974-01, Vol.15 (3), p.395-398

Brasen, D.

1974

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Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate

Applied physics letters, 1986-12, Vol.49 (22), p.1537-1539

1986

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A model for the formation of stacking faults in silicon

Applied physics letters, 1977-01, Vol.30 (2), p.73-75

1977

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An analysis of dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of 〈111〉 InP

Journal of applied physics, 1985-12, Vol.58 (11), p.4383-4389

1985

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High resolution ion scattering study of silicon oxynitridation

Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates

Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

Nitrogen content of oxynitride films on Si(100)

Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

Using cone structures for circuit partitioning into FPGA packages

Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

Growth temperature dependence of the Si(001)/SiO2 interface width

Nuclear reaction analysis of deuterium in ultrathin films of SiO2 on Si

Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation

Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor deposition

Evaluation of microstructures associated with hardness indentations in InP

Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

Excimer laser-induced deposition of InP: crystallographic and mechanistic studies

ArF excimer-laser-stimulated growth of polycrystalline GaAs thin films

Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process

Glass formation and switching in the SbSe systems

Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate

A model for the formation of stacking faults in silicon

An analysis of dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of 〈111〉 InP

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