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Disappearance of rapid photoresponse in ultraviolet illumination of Ag–Sb–S films

Journal of physics. D, Applied physics, 2024-05, Vol.57 (21), p.215104

2024

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Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Nanotechnology, 2023-09, Vol.34 (37), p.375602

2023

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Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

Nanotechnology, 2014-11, Vol.25 (45), p.455702-455702

2014

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More than words: Itch perception visualized by patients’ drawings

Journal of the European Academy of Dermatology and Venereology, 2022-08, Vol.36 (8), p.e638-e640

2022

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Next Generation Lab puts Denmark's past in the hands of its future

Antiquity, 2022-02, Vol.96 (385), p.221-228

2022

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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Nanotechnology, 2023-11, Vol.34 (46), p.465605

2023

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All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Global publication productivity in dermatology: a bibliometric description of the past and estimation of the future

Journal of the European Academy of Dermatology and Venereology, 2021-07, Vol.35 (7), p.1424-1433

2021

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A route for the top-down fabrication of ordered ultrathin GaN nanowires

Nanotechnology, 2023-05, Vol.34 (20), p.205301

2023

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Macro- and micro-strain in GaN nanowires on Si(111)

Nanotechnology, 2011-07, Vol.22 (29), p.295714-295714

2011

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Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

Nanotechnology, 2017-10, Vol.28 (42), p.425602-425602

2017

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In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Applied physics letters, 2017-02, Vol.110 (7)

2017

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Pemphigus foliaceus successfully treated with upadacitinib

Journal of the European Academy of Dermatology and Venereology, 2024-07

2024

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Acceleration in thinning rate on western Svalbard glaciers

Geophysical research letters, 2007-09, Vol.34 (18), p.L18502-n/a

2007

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Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Nanotechnology, 2024-06, Vol.35 (26), p.265702

2024

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Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Nano letters, 2015-06, Vol.15 (6), p.3743-3747

2015

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Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Applied physics letters, 2016-07, Vol.109 (4)

2016

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Nature (London), 2000-08, Vol.406 (6798), p.865-868

2000

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Approaching sheep herds origins and the emergence of the wool economy in continental Europe during the Bronze Age

Archaeological and anthropological sciences, 2019-09, Vol.11 (9), p.4909-4925

2019

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Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Nanotechnology, 2019-05, Vol.30 (21), p.214005

2019

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Colossal magnetic moment of Gd in GaN

Physical review letters, 2005-01, Vol.94 (3), p.037205.1-037205.4, Article 037205

2005

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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045423.1-045423.12, Article 045423

2005

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Electron spin dynamics in mesoscopic GaN nanowires

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Applied physics letters, 2018-01, Vol.112 (2)

2018

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Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Nanotechnology, 2019-03, Vol.30 (11), p.114001-114001

2019

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Disappearance of rapid photoresponse in ultraviolet illumination of Ag–Sb–S films

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

More than words: Itch perception visualized by patients’ drawings

Next Generation Lab puts Denmark's past in the hands of its future

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

Global publication productivity in dermatology: a bibliometric description of the past and estimation of the future

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Macro- and micro-strain in GaN nanowires on Si(111)

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Pemphigus foliaceus successfully treated with upadacitinib

Acceleration in thinning rate on western Svalbard glaciers

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Approaching sheep herds origins and the emergence of the wool economy in continental Europe during the Bronze Age

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Colossal magnetic moment of Gd in GaN

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Electron spin dynamics in mesoscopic GaN nanowires

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

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