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Establishing best practices in the use of an upgraded airborne teaching laboratory

Aeronautical journal, 2023-09, Vol.127 (1315), p.1491-1504

2023

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Calcium and phosphorus requirements of the ewe during pregnancy and lactation

British journal of nutrition, 2007-07, Vol.50 (3), p.711-722

Braithwaite, G. D.

2007

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Prognostic factors affecting outcomes in fistulating perianal Crohn’s disease: a systematic review

Techniques in coloproctology, 2017-07, Vol.21 (7), p.501-519

2017

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Helicopter maintenance error analysis: Beyond the third order of the HFACS-ME

International journal of industrial ergonomics, 2010-11, Vol.40 (6), p.636-647

2010

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Investigating the investigations: a retrospective study in the aviation maintenance error causation

Cognition, technology & work, 2013-05, Vol.15 (2), p.171-188

2013

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Tools for appraisal and revalidation—evaluation of regionally delivered workshops

Occupational medicine (Oxford), 2012-04, Vol.62 (3), p.220-222

2012

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Eradicating root causes of aviation maintenance errors: introducing the AMMP

Cognition, technology & work, 2014-02, Vol.16 (1), p.71-90

2014

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SiGe-free strained Si on insulator by wafer bonding and layer transfer

Applied physics letters, 2003-06, Vol.82 (24), p.4256-4258

2003

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Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor science and technology, 2004-01, Vol.19 (1), p.L4-L8

2004

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Interactions between Poly(ethylene oxide) Layers Adsorbed to Glass Surfaces Probed by Using a Modified Atomic Force Microscope

Langmuir, 1996-08, Vol.12 (17), p.4224-4237

1996

Volltextzugriff (PDF)

Scalability of strained-Si nMOSFETs down to 25 nm gate length

IEEE electron device letters, 2003-05, Vol.24 (5), p.351-353

2003

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Strained Si on insulator technology: from materials to devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1357-1367

2004

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Calcium and phosphorus requirements of the ewe during pregnancy and lactation

British journal of nutrition, 2007-07, Vol.50 (3), p.723-736

Braithwaite, G. D.

2007

Volltextzugriff (PDF)

The Simultaneous Determination of the Forces and Viscoelastic Properties of Adsorbed Polymer Layers

Journal of colloid and interface science, 1999-10, Vol.218 (1), p.97-111

1999

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Fully depleted n-MOSFETs on supercritical thickness strained SOI

IEEE electron device letters, 2004-02, Vol.25 (2), p.83-85

2004

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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Applied surface science, 2004-03, Vol.224 (1), p.278-282

2004

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Investigation of electrical properties of furnace grown gate oxide on strained-Si

Thin solid films, 2004-09, Vol.462, p.85-89

2004

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Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Applied physics letters, 2000-02, Vol.76 (8), p.943-945

2000

Volltextzugriff (PDF)

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Applied physics letters, 2001-03, Vol.78 (10), p.1424-1426

2001

Volltextzugriff (PDF)

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Thin solid films, 2006-08, Vol.513 (1), p.300-306

2006

Volltextzugriff (PDF)

The effect of polyethylene glycol on the stability of pores in polyvinyl alcohol hydrogels during annealing

Biomaterials, 2008-01, Vol.29 (2), p.141-149

2008

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Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

Applied physics letters, 2000-02, Vol.76 (9), p.1140-1142

2000

Volltextzugriff (PDF)

JET polari‐interferometer

Review of scientific instruments, 1989-09, Vol.60 (9), p.2825-2834

1989

Volltextzugriff (PDF)

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Applied physics letters, 1999-03, Vol.74 (13), p.1848-1850

1999

Volltextzugriff (PDF)

Study of a Solvated Adsorbed Gelatin Layer Using a Modified Force Microscope

Journal of colloid and interface science, 1999-05, Vol.213 (2), p.525-545

1999

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Establishing best practices in the use of an upgraded airborne teaching laboratory

Calcium and phosphorus requirements of the ewe during pregnancy and lactation

Prognostic factors affecting outcomes in fistulating perianal Crohn’s disease: a systematic review

Helicopter maintenance error analysis: Beyond the third order of the HFACS-ME

Investigating the investigations: a retrospective study in the aviation maintenance error causation

Tools for appraisal and revalidation—evaluation of regionally delivered workshops

Eradicating root causes of aviation maintenance errors: introducing the AMMP

SiGe-free strained Si on insulator by wafer bonding and layer transfer

Film thickness constraints for manufacturable strained silicon CMOS

Interactions between Poly(ethylene oxide) Layers Adsorbed to Glass Surfaces Probed by Using a Modified Atomic Force Microscope

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Strained Si on insulator technology: from materials to devices

Calcium and phosphorus requirements of the ewe during pregnancy and lactation

The Simultaneous Determination of the Forces and Viscoelastic Properties of Adsorbed Polymer Layers

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Investigation of electrical properties of furnace grown gate oxide on strained-Si

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

The effect of polyethylene glycol on the stability of pores in polyvinyl alcohol hydrogels during annealing

Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

JET polari‐interferometer

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Study of a Solvated Adsorbed Gelatin Layer Using a Modified Force Microscope

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