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Wafer-Scale Packaged RF Microelectromechanical Switches

IEEE transactions on microwave theory and techniques, 2008-02, Vol.56 (2), p.522-529

2008

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Observation of electric field gradients near field-emission cathode arrays

Applied physics letters, 1995-02, Vol.66 (9), p.1147-1149

1995

Volltextzugriff (PDF)

A technique for producing epitaxial films on reuseable substrates

Applied physics letters, 1980-09, Vol.37 (6), p.560-562

1980

Volltextzugriff (PDF)

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Applied physics letters, 1982-08, Vol.41 (4), p.347-349

1982

Volltextzugriff (PDF)

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition

Applied physics letters, 1982-09, Vol.41 (6), p.545-547

1982

Volltextzugriff (PDF)

18.5-dB Gain at 18 GHz with a GaAs permeable base transistor

IEEE electron device letters, 1985-09, Vol.6 (9), p.456-458

1985

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Electroabsorption in GaAs and its application to waveguide detectors and modulators

Applied physics letters, 1976-05, Vol.28 (9), p.544-546

1976

Volltextzugriff (PDF)

Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

Applied physics letters, 1981-03, Vol.38 (5), p.313-315

1981

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Small-signal gain performance of the permeable base transistor at EHF

IEEE electron device letters, 1987-02, Vol.8 (2), p.66-68

1987

Volltextzugriff (PDF)

Fabrication and numerical simulation of the permeable base transistor

IEEE transactions on electron devices, 1980-06, Vol.27 (6), p.1128-1141

1980

Volltextzugriff (PDF)

Low-frequency noise in permeable base transistors

IEEE transactions on electron devices, 1984-10, Vol.31 (10), p.1408-1413

1984

Volltextzugriff (PDF)

GaAs p + n − n + directional-coupler switch

Applied physics letters, 1976-11, Vol.29 (10), p.652-654

1976

Volltextzugriff (PDF)

Submicrometer patterning by projected excimer‐laser‐beam induced chemistry

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-01, Vol.3 (1), p.1-8

1985

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High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes

Applied physics letters, 1976-07, Vol.29 (2), p.123-125

1976

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Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy

Journal of applied physics, 1983-06, Vol.54 (6), p.3554-3560

1983

Volltextzugriff (PDF)

Submillimeter Heterodyne Detection with Planar GaAs Schottky-Barrier Diodes

IEEE transactions on microwave theory and techniques, 1977-06, Vol.25 (6), p.494-495

1977

Volltextzugriff (PDF)

The permeable base transistor and its application to logic circuits

Proceedings of the IEEE, 1982-01, Vol.70 (1), p.46-52

1982

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Ultrathin, high-efficiency solar cells made from GaAs films prepared by the CLEFT Process

IEEE electron device letters, 1981-08, Vol.2 (8), p.203-205

1981

Volltextzugriff (PDF)

Uniform-carrier-concentration p -type layers in GaAs produced by beryllium ion implantation

Applied physics letters, 1976-06, Vol.28 (12), p.706-708

1976

Volltextzugriff (PDF)

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

Applied physics letters, 1978-03, Vol.32 (6), p.390-392

1978

Volltextzugriff (PDF)

TP-A2 the cleft process: A technique for producing many epitaxial single-crystal GaAs films by employing one reusable substrate

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2188-2188

1980

Volltextzugriff (PDF)

Calculated and measured efficiencies of thin-film shallow-homojunction GaAs solar cells on Ge substrates

Applied physics letters, 1979-12, Vol.35 (11), p.875-878

1979

Volltextzugriff (PDF)

MP-B6 low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2181-2181

1980

Volltextzugriff (PDF)

Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE

Journal of crystal growth, 1982-01, Vol.56 (2), p.410-422

1982

Volltextzugriff (PDF)

High-efficiency GaAs shallow-homojunction solar cells

Applied physics letters, 1977-11, Vol.31 (9), p.629-631

1977

Volltextzugriff (PDF)

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Wafer-Scale Packaged RF Microelectromechanical Switches

Observation of electric field gradients near field-emission cathode arrays

A technique for producing epitaxial films on reuseable substrates

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition

18.5-dB Gain at 18 GHz with a GaAs permeable base transistor

Electroabsorption in GaAs and its application to waveguide detectors and modulators

Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

Small-signal gain performance of the permeable base transistor at EHF

Fabrication and numerical simulation of the permeable base transistor

Low-frequency noise in permeable base transistors

GaAs p + n − n + directional-coupler switch

Submicrometer patterning by projected excimer‐laser‐beam induced chemistry

High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes

Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy

Submillimeter Heterodyne Detection with Planar GaAs Schottky-Barrier Diodes

The permeable base transistor and its application to logic circuits

Ultrathin, high-efficiency solar cells made from GaAs films prepared by the CLEFT Process

Uniform-carrier-concentration p -type layers in GaAs produced by beryllium ion implantation

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

TP-A2 the cleft process: A technique for producing many epitaxial single-crystal GaAs films by employing one reusable substrate

Calculated and measured efficiencies of thin-film shallow-homojunction GaAs solar cells on Ge substrates

MP-B6 low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE

High-efficiency GaAs shallow-homojunction solar cells

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