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Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

Crystals (Basel), 2023-04, Vol.13 (4), p.681

2023

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Progress in photovoltaics, 2023-03, Vol.31 (3), p.230-236

2023

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Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices

Crystal growth & design, 2020-10, Vol.20 (10), p.6939-6946

2020

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Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy

Applied physics letters, 2020-09, Vol.117 (12)

2020

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24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2024-01, Vol.14 (3), p.n/a

2024

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23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

Solar energy materials and solar cells, 2021-09, Vol.230, p.111299, Article 111299

2021

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Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures

Solar energy materials and solar cells, 2019-11, Vol.202, p.110133, Article 110133

2019

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In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

Crystal growth & design, 2024-04, Vol.24 (8), p.3218-3227

2024

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The Critical Role of AlInP Window Design in III-V Rear-Emitter Solar Cells

IEEE journal of photovoltaics, 2020-05, Vol.10 (3), p.758-764

2020

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Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III-V/Si Tandem Photovoltaics

IEEE journal of photovoltaics, 2019-11, Vol.9 (6), p.1644-1651

2019

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IEEE_Xplore

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs0.75P0.25/Si Tandem Solar Cells

IEEE journal of photovoltaics, 2021-03, Vol.11 (2), p.408-414

2021

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IEEE_Xplore

Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.202-203

2019

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GaAs Solar Cells Grown on Acoustically-Spalled GaAs Substrates with 27% Efficiency

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-1

2023

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Comparative Study of ∼2.05 eV Lattice-Matched and Metamorphic (Al)GaInP Solar Cells Grown by MOCVD

IEEE journal of photovoltaics, 2018-11, Vol.8 (6), p.1601-1607

2018

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IEEE_Xplore

In-Situ Smoothing of Facets on Spalled GaAs(100) Substrates During OMPVE Growth of III-V Solar Cells

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-1

2023

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AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Progress in photovoltaics, 2022-10, Vol.31 (3)

2022

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Si-matched B x Ga1− x P grown via hybrid solid- and gas-source molecular beam epitaxy

Applied physics letters, 2020-09, Vol.117 (12)

2020

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24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2023-12, Vol.14 (3)

2023

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Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

IEEE journal of photovoltaics, 2021-03, Vol.11 (2), p.408-414

2021

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Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

Crystals (Basel), 2023-04, Vol.13 (4)

2023

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GaAs solar cells grown on acoustically spalled GaAs substrates with 27% efficiency

Joule, 2023-07, Vol.7 (7), p.1529-1542

2023

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Exploring Multiple Pathways to Low TDD GaP/Si for III-V/Si Photovoltaics

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021, p.2144-2145

2021

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III-V Solar Cells Grown Directly on V-Groove Si Substrates

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-1

2023

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Effect of Surface Morphology on GaAs Solar Cells Grown on Planarized Spalled (100) GaAs Substrates

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-1

2023

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Investigation of Rear-Emitter GaAs 0.75 P 0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics

IEEE journal of photovoltaics, 2019-11, Vol.9 (6), p.1644-1651

2019

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Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices

Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy

24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures

In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

The Critical Role of AlInP Window Design in III-V Rear-Emitter Solar Cells

Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III-V/Si Tandem Photovoltaics

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs0.75P0.25/Si Tandem Solar Cells

Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis

GaAs Solar Cells Grown on Acoustically-Spalled GaAs Substrates with 27% Efficiency

Comparative Study of ∼2.05 eV Lattice-Matched and Metamorphic (Al)GaInP Solar Cells Grown by MOCVD

In-Situ Smoothing of Facets on Spalled GaAs(100) Substrates During OMPVE Growth of III-V Solar Cells

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Si-matched B x Ga1− x P grown via hybrid solid- and gas-source molecular beam epitaxy

24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

GaAs solar cells grown on acoustically spalled GaAs substrates with 27% efficiency

Exploring Multiple Pathways to Low TDD GaP/Si for III-V/Si Photovoltaics

III-V Solar Cells Grown Directly on V-Groove Si Substrates

Effect of Surface Morphology on GaAs Solar Cells Grown on Planarized Spalled (100) GaAs Substrates

Investigation of Rear-Emitter GaAs 0.75 P 0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics

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