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Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (14), p.3528-3535

2017

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UVSQ-SAT, a Pathfinder CubeSat Mission for Observing Essential Climate Variables

Remote sensing (Basel, Switzerland), 2020-01, Vol.12 (1), p.92

2020

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Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Scientific reports, 2017-08, Vol.7 (1), p.7457-7, Article 7457

2017

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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Applied physics letters, 2009-06, Vol.94 (23), p.233506-233506-3

2009

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Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ ‐Ga 2 O 3 Due to Interfacing with β ‐Ga 2 O 3 Template Layers

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ ‐Ga 2 O 3 Due to Interfacing with β ‐Ga 2 O 3 Template Layers

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Journal of physics. D, Applied physics, 2016-08, Vol.49 (31), p.315105

2016

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Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Scientific reports, 2017-11, Vol.7 (1), p.15912-1, Article 15912

2017

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Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Nanotechnology, 2017-05, Vol.28 (19), p.195304

2017

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Two-dimensional confinement of excitons at the interface in nonpolar MgZnO/ZnO heterostructures

Physical review materials, 2022-03, Vol.6 (3), Article 035202

2022

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Red luminescence in H-doped β − G a 2 O 3

Physical review materials, 2020-08, Vol.4 (8), Article 085201

2020

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Red luminescence in H-doped β-Ga$_2$O$_3

Physical review materials, 2020, Vol.4 (8)

2020

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Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.449-454

2014

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Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

Applied physics letters, 2008-07, Vol.93 (4), p.041913-041913-3

2008

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Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures

Japanese journal of applied physics, 1991-06, Vol.30 (6), p.1186-1189

1991

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Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser deposition

Physica status solidi. C, 2013-10, Vol.10 (10), p.1317-1321

2013

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Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al sub(2)O sub(3), ZnO and steel substrates by pulsed laser deposition

Physica status solidi. C, 2013-10, Vol.10 (10), p.1317-1321

2013

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Growth of “moth‐eye” ZnO nanostructures on Si(111), c‐Al 2 O 3 , ZnO and steel substrates by pulsed laser deposition

Physica status solidi. C, 2013-10, Vol.10 (10), p.1317-1321

2013

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Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.786-790

2009

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Metal Organic Molecular Beam Epitaxy Growth of Ga 0.5 In 0.5 P/GaAs Quantum Well Structures

Japanese Journal of Applied Physics, 1991-06, Vol.30 (6R), p.1186

1991

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Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates

MRS proceedings, 2008, Vol.1108 (1), Article 1108-A04-01

2008

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High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1731-1736

2003

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Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4

2008

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Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing

UVSQ-SAT, a Pathfinder CubeSat Mission for Observing Essential Climate Variables

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ ‐Ga 2 O 3 Due to Interfacing with β ‐Ga 2 O 3 Template Layers

Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ ‐Ga 2 O 3 Due to Interfacing with β ‐Ga 2 O 3 Template Layers

Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers

Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Two-dimensional confinement of excitons at the interface in nonpolar MgZnO/ZnO heterostructures

Red luminescence in H-doped β − G a 2 O 3

Red luminescence in H-doped β-Ga$_2$O$_3

Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures

Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser deposition

Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al sub(2)O sub(3), ZnO and steel substrates by pulsed laser deposition

Growth of “moth‐eye” ZnO nanostructures on Si(111), c‐Al 2 O 3 , ZnO and steel substrates by pulsed laser deposition

Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP

Metal Organic Molecular Beam Epitaxy Growth of Ga 0.5 In 0.5 P/GaAs Quantum Well Structures

Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects

Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates

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