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Nonlinear optical rectification in a vertically coupled lens-shaped InAs/GaAs quantum dots with wetting layers under hydrostatic pressure and temperature

Journal of alloys and compounds, 2016-06, Vol.671, p.200-207

2016

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Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Journal of alloys and compounds, 2015-10, Vol.647, p.110-122

2015

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Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects

Journal of luminescence, 2013-12, Vol.144, p.158-162

2013

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Second-Harmonic Generation in Vertically Coupled InAs/GaAs Quantum Dots with a Gaussian Potential Distribution: Combined Effects of Electromagnetic Fields, Pressure, and Temperature

Journal of electronic materials, 2015-08, Vol.44 (8), p.2792-2799

2015

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Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 μm wavelength

Journal of luminescence, 2014-04, Vol.148, p.207-213

2014

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Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (115)A GaAs substrate

Physica. E, Low-dimensional systems & nanostructures, 2013-05, Vol.50, p.83-87

2013

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Simultaneous effects of hydrostatic pressure, temperature and electric field on optical absorption in InAs/GaAs lens shape quantum dot

Journal of alloys and compounds, 2016-01, Vol.655, p.172-177

2016

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Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

Journal of applied physics, 2010-04, Vol.107 (7), p.074307-074307-4

2010

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Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots

Journal of applied physics, 2009-05, Vol.105 (9), p.094322-094322-4

2009

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Optical nonlinearities in delta-doped AlGaN/GaN quantum well heterostructures

Journal of applied physics, 2007-05, Vol.101 (9), p.094506-094506-6

2007

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Effect of growth temperature on InAs wetting layer grown on (1 1 3)A GaAs by molecular beam epitaxy

Journal of crystal growth, 2006-08, Vol.293 (2), p.330-334

2006

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Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (1 1 5)A substrate

Physica. B, Condensed matter, 2010-01, Vol.405 (2), p.744-747

2010

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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1 1 3)A substrate

Journal of luminescence, 2012-02, Vol.132 (2), p.289-292

2012

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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Applied physics. A, Materials science & processing, 2004-08, Vol.79 (3), p.587-591

2004

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Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors

Solid state communications, 2006-11, Vol.140 (6), p.308-312

2006

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Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule

Journal of applied physics, 2008-09, Vol.104 (6), p.064314-064314-7

2008

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GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs

Applied physics. A, Materials science & processing, 2005-06, Vol.81 (1), p.79-85

2005

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Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic hemt

Applied physics. A, Materials science & processing, 2005-02, Vol.80 (2), p.295-299

2005

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Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011-12, Vol.13 (12), p.6527-6535

2011

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Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

Journal of applied physics, 2012-01, Vol.111 (2), p.024310-024310-7

2012

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Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011, Vol.13 (1), p.257-262

2011

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In-situ crystal growth monitoring using a CCD imaging system

Sensors and actuators. A. Physical., 2005-05, Vol.121 (1), p.95-102

2005

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Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

Physica status solidi. A, Applications and materials science, 2003-10, Vol.199 (3), p.457-463

2003

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Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential

Materials science in semiconductor processing, 2015-08, Vol.36, p.192-203

2015

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Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot

Journal of luminescence, 2013-03, Vol.135, p.271-275

2013

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Nonlinear optical rectification in a vertically coupled lens-shaped InAs/GaAs quantum dots with wetting layers under hydrostatic pressure and temperature

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects

Second-Harmonic Generation in Vertically Coupled InAs/GaAs Quantum Dots with a Gaussian Potential Distribution: Combined Effects of Electromagnetic Fields, Pressure, and Temperature

Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 μm wavelength

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (115)A GaAs substrate

Simultaneous effects of hydrostatic pressure, temperature and electric field on optical absorption in InAs/GaAs lens shape quantum dot

Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots

Optical nonlinearities in delta-doped AlGaN/GaN quantum well heterostructures

Effect of growth temperature on InAs wetting layer grown on (1 1 3)A GaAs by molecular beam epitaxy

Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (1 1 5)A substrate

Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1 1 3)A substrate

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors

Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule

GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs

Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic hemt

Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

In-situ crystal growth monitoring using a CCD imaging system

Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential

Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot

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