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Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5

Nature communications, 2012, Vol.3 (1), p.1096, Article 1096

2012

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Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

IEEE electron device letters, 2012-09, Vol.33 (9), p.1225-1227

2012

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Power-Dependent Raman Analysis of Highly Strained Si Nanobridges

Nano letters, 2014-03, Vol.14 (3), p.1249-1254

2014

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Comparative Simulation Analysis of Process-Induced Variability in Nanoscale SOI and Bulk Trigate FinFETs

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3611-3617

2013

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Journal of applied physics, 2008-01, Vol.103 (2), p.023508-023508-9

2008

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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537

2012

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20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

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Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

Solid-state electronics, 2014-07, Vol.97, p.76-81

2014

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Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

Solid-state electronics, 2014-08, Vol.98, p.32-37

2014

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Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions

Solid-state electronics, 2013-06, Vol.84, p.211-215

2013

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Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

IEEE electron device letters, 2013-06, Vol.34 (6), p.813-815

2013

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Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

Solid-state electronics, 2014-07, Vol.97, p.8-13

2014

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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Solid-state electronics, 2012-08, Vol.74, p.97-101

2012

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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

Solid-state electronics, 2013-12, Vol.90, p.143-148

2013

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Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011, Vol.32 (1), p.15-17

2011

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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758-760

2012

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Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

Solid-state electronics, 2010-09, Vol.54 (9), p.849-854

2010

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

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Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

Solid-state electronics, 2011-11, Vol.65-66, p.9-15

2011

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Comparison of platelet formation in hydrogen and helium-implanted silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-08, Vol.262 (1), p.24-28

2007

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Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology

Solid-state electronics, 2013-10, Vol.88, p.15-20

2013

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High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

Microelectronic engineering, 2011-09, Vol.88 (9), p.2955-2958

2011

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Raman spectroscopy study of damage and strain in (001)and (011) Si induced by hydrogen or helium implantation

Journal of applied physics, 2007-11, Vol.102 (9), p.094905-094905-7

2007

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Study of extended-defect formation in Ge and Si after H ion implantation

Applied physics letters, 2005-05, Vol.86 (18), p.181910-181910-3

2005

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Electrical activation kinetics for shallow boron implants in silicon

Applied physics letters, 1999-05, Vol.74 (18), p.2658-2660

1999

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Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Power-Dependent Raman Analysis of Highly Strained Si Nanobridges

Comparative Simulation Analysis of Process-Induced Variability in Nanoscale SOI and Bulk Trigate FinFETs

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

Comparison of platelet formation in hydrogen and helium-implanted silicon

Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology

High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

Raman spectroscopy study of damage and strain in (001)and (011) Si induced by hydrogen or helium implantation

Study of extended-defect formation in Ge and Si after H ion implantation

Electrical activation kinetics for shallow boron implants in silicon

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