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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Nanotechnology, 2011-02, Vol.22 (7), p.075601-075601

2011

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Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots

Nano letters, 2012-06, Vol.12 (6), p.2977-2981

2012

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Ge doping of GaN beyond the Mott transition

Journal of physics. D, Applied physics, 2016-11, Vol.49 (44), p.445301

2016

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Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

Nano letters, 2010-09, Vol.10 (9), p.3545-3550

2010

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Growth, structural and optical properties of AlGaN nanowires in the whole composition range

Nanotechnology, 2013-03, Vol.24 (11), p.115704-115704

2013

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Electrical and optical properties of heavily Ge-doped AlGaN

Journal of physics. D, Applied physics, 2019-03, Vol.52 (12), p.125101

2019

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Growth mechanism and properties of InGaN insertions in GaN nanowires

Nanotechnology, 2012-04, Vol.23 (13), p.135703-1-6

2012

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Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Nanotechnology, 2009-10, Vol.20 (41), p.415602-415602

2009

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Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires

ACS applied materials & interfaces, 2015-10, Vol.7 (39), p.21898-21906

2015

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Subnanosecond spectral diffusion measurement using photon correlation

Nature photonics, 2010-10, Vol.4 (10), p.696-699

2010

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Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Nanotechnology, 2020-05, Vol.31 (20), p.204001-204001

2020

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Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

Nanotechnology, 2020-03, Vol.31 (11), p.115602-115602

2020

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Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

Applied physics letters, 2013-08, Vol.103 (9)

2013

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Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

Nanotechnology, 2020-12, Vol.31 (50), p.505205

2020

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Controlling the shape of a tapered nanowire: lessons from the Burton-Cabrera-Frank model

Nanotechnology, 2020-04, Vol.31 (27), p.274004-274004

2020

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Nonpolar m-plane GaN AlGaN heterostructures with intersubband transitions in the 5-10 THz band

Nanotechnology, 2015-10, Vol.26 (43), p.435201-435201

2015

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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2012-05, Vol.100 (21), p.212107-212107-5

2012

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Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

Nanotechnology, 2013-08, Vol.24 (30), p.305703-305703

2013

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical review. B, 2017-03, Vol.95 (12), p.125314, Article 125314

2017

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Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN AlGaN heterostructures

Nanotechnology, 2016-04, Vol.27 (14), p.145201-145201

2016

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10THz band

Nanotechnology, 2015-10, Vol.26 (43), p.1-6

2015

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GaN/AlGaN intersubband optoelectronic devices

New journal of physics, 2009-12, Vol.11 (12), p.125023

2009

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Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Nanotechnology, 2012-10, Vol.23 (40), p.405601-405601

2012

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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots

Ge doping of GaN beyond the Mott transition

Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

Growth, structural and optical properties of AlGaN nanowires in the whole composition range

Electrical and optical properties of heavily Ge-doped AlGaN

Growth mechanism and properties of InGaN insertions in GaN nanowires

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires

Subnanosecond spectral diffusion measurement using photon correlation

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

Controlling the shape of a tapered nanowire: lessons from the Burton-Cabrera-Frank model

Nonpolar m-plane GaN AlGaN heterostructures with intersubband transitions in the 5-10 THz band

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN AlGaN heterostructures

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10THz band

GaN/AlGaN intersubband optoelectronic devices

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

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