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Magnesium diffusion profile in GaN grown by MOVPE

Journal of crystal growth, 2008-07, Vol.310 (14), p.3274-3277

2008

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GaN thermal decomposition in N 2 AP-MOCVD environment

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125025

2008

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In situ optical monitoring of the decomposition of GaN thin films

Journal of crystal growth, 1999-05, Vol.203 (1), p.12-17

1999

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Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry

Semiconductor science and technology, 2009-09, Vol.24 (9), p.095020-095020 (4)

2009

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GaN thermal decomposition in N2 AP-MOCVD environment

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125025

2008

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Luminescent properties of GaN films grown on porous silicon substrate

Journal of luminescence, 2010-03, Vol.130 (3), p.399-403

2010

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Effect of SiN treatment on GaN epilayer quality

Physica status solidi. A, Applied research, 2004-02, Vol.201 (3), p.502-508

2004

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High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

Applied surface science, 2006-10, Vol.253 (1), p.241-245

2006

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Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-07, Vol.110 (3), p.251-255

2004

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Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

Materials letters, 2008-02, Vol.62 (3), p.515-519

2008

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Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment

Applied surface science, 2006-10, Vol.253 (1), p.258-260

2006

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High quality GaN grown by MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.316-320

1997

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Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (12), p.1156-1159

2008

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Study of space charge in gallium nitride by the thermal step method

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.89-93

2006

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Electron beam-induced current investigation of GaN schottky diode

Journal of electronic materials, 2005-07, Vol.34 (7), p.1059-1064

2005

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Theoretical and Experiment Study of Cathodoluminescence of GaN

Fundamental and Applied Spectroscopy (AIP Conference Proceedings Series Volume 935), 2007, Vol.935, p.65-71

2007

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Minority carrier diffusion lengths and optical self-absorption coefficient in undoped GaN

Physica Status Solidi (b), 2003-11, Vol.240 (1), p.160-168

2003

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Morphological study of GaN layers grown on porous silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.102-106

2002

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Hot filament assisted metalorganic vapor-phase deposition of GaN

Journal of crystal growth, 1999-10, Vol.206 (1), p.1-7

1999

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Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process

Journal of luminescence, 1999-07, Vol.82 (1), p.81-84

1999

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Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

Journal of crystal growth, 1999-11, Vol.207 (1-2), p.15-19

1999

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Characterization of GaN layers grown on porous silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.98-101

2001

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Optical properties of GaN grown on porous silicon substrate

Physica status solidi. A, Applied research, 2004-02, Vol.201 (3), p.582-587

2004

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Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling

Microelectronics, 2009-02, Vol.40 (2), p.363-366

2009

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Annealing Effect on GaN Buffer Layer Surface

Physica status solidi. A, Applied research, 2001-03, Vol.184 (1), p.263-271

2001

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Magnesium diffusion profile in GaN grown by MOVPE

GaN thermal decomposition in N 2 AP-MOCVD environment

In situ optical monitoring of the decomposition of GaN thin films

Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry

GaN thermal decomposition in N2 AP-MOCVD environment

Luminescent properties of GaN films grown on porous silicon substrate

Effect of SiN treatment on GaN epilayer quality

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment

High quality GaN grown by MOVPE

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE

Study of space charge in gallium nitride by the thermal step method

Electron beam-induced current investigation of GaN schottky diode

Theoretical and Experiment Study of Cathodoluminescence of GaN

Minority carrier diffusion lengths and optical self-absorption coefficient in undoped GaN

Morphological study of GaN layers grown on porous silicon

Hot filament assisted metalorganic vapor-phase deposition of GaN

Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process

Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

Characterization of GaN layers grown on porous silicon

Optical properties of GaN grown on porous silicon substrate

Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling

Annealing Effect on GaN Buffer Layer Surface

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