UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

Volltextzugriff (PDF)

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

2014 IEEE International Reliability Physics Symposium, 2014, p.2E.5.1-2E.5.5

2014

Volltextzugriff (PDF)

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205

2013

Volltextzugriff (PDF)

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205

2013

Volltextzugriff (PDF)

Mobility Investigations on Strained 30-nm High- k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1819-1825

2015

Volltextzugriff (PDF)

Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

Volltextzugriff (PDF)

Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

Volltextzugriff (PDF)

ESD characterisation of a-IGZO TFTs on Si and foil substrates

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.276-279

2017

Volltextzugriff (PDF)

Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLP

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

Volltextzugriff (PDF)

Demonstration of sufficient BTI reliability for a 14-nm finFET 1.8 V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.FA-5.1-FA-5.4

2017

Volltextzugriff (PDF)

ESD ballasting of Ge FinFET ggNMOS devices

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.3F-3.1-3F-3.6

2017

Volltextzugriff (PDF)

Impact of local interconnects on ESD design

2015 International Conference on IC Design & Technology (ICICDT), 2015, p.1-4

2015

Volltextzugriff (PDF)

ESD protection diodes in optical interposer technology

2015 International Conference on IC Design & Technology (ICICDT), 2015, p.1-4

2015

Volltextzugriff (PDF)

Bidirectional NPN ESD protection in silicon photonics technology

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.3B-5-1-3B-5-7

2016

Volltextzugriff (PDF)

Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates

ECS transactions, 2007-04, Vol.6 (1), p.15-22

2007

Volltextzugriff (PDF)

vfTLP characteristics of ESD diodes in bulk si gate-all-around vertically stacked horizontal nanowire technology

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017, p.1-7

2017

Volltextzugriff (PDF)

vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2016, p.1-8

2016

Volltextzugriff (PDF)

VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology

2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015, p.1-6

2015

Volltextzugriff (PDF)

ESD characterization of diodes and ggMOS in Germanium FinFET technologies

2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015, p.1-9

2015

Volltextzugriff (PDF)

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

2012 4th IEEE International Memory Workshop, 2012, p.1-4

2012

Volltextzugriff (PDF)

ESD characterization of Germanium diodes

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2014, 2014, p.1-9

2014

Volltextzugriff (PDF)

Scalability of Partially-Depleted Biaxially-Strained SOI Technology

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (37), p.2390-2390

2008

Volltextzugriff (PDF)

Local CDM ESD Protection Circuits for Cross-Power Domains in 3D IC Applications

IEEE transactions on device and materials reliability, 2014-06, Vol.14 (2), p.781-783

2014

Volltextzugriff (PDF)

1 – 23 von 23

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(7)
Mit Volltextzugriff
(16)

Publikationsform

Sprache

Englisch
(23)
Japanisch
(4)

Erscheinungsjahr

n.n

Thema

Engineering
(14)
Engineering, Electrical & Electronic
(14)
Science & Technology
(14)
Technology
(14)
Electrostatic Discharges
(12)
Logic Gates
(12)
Silicon
(9)
Stress
(9)
Resistance
(7)
Finfets
(5)
Physical Sciences
(5)
Physics
(5)
Physics, Applied
(5)
Hafnium Compounds
(4)
Transistors
(4)
Charge Carrier Processes
(3)
Current Measurement
(3)
Esd
(3)
Germanium
(3)
Junctions
(3)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

Menü

Weitere Dienste

Einstellungen

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

Mobility Investigations on Strained 30-nm High- k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

ESD characterisation of a-IGZO TFTs on Si and foil substrates

Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLP

Demonstration of sufficient BTI reliability for a 14-nm finFET 1.8 V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

ESD ballasting of Ge FinFET ggNMOS devices

Impact of local interconnects on ESD design

ESD protection diodes in optical interposer technology

Bidirectional NPN ESD protection in silicon photonics technology

Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates

vfTLP characteristics of ESD diodes in bulk si gate-all-around vertically stacked horizontal nanowire technology

vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology

ESD characterization of diodes and ggMOS in Germanium FinFET technologies

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

ESD characterization of Germanium diodes

Scalability of Partially-Depleted Biaxially-Strained SOI Technology

Local CDM ESD Protection Circuits for Cross-Power Domains in 3D IC Applications

Suchergebnisse filtern