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Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots

Applied physics letters, 1996-11, Vol.69 (22), p.3354-3356

1996

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Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

Journal of applied physics, 1999-11, Vol.86 (9), p.4748-4755

1999

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Photoluminescence study of exciton–optical phonon scattering in bulk GaAs and GaAs quantum wells

Journal of applied physics, 2000-02, Vol.87 (4), p.1858-1862

2000

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Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

Applied physics letters, 1999-01, Vol.74 (4), p.564-566

1999

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Optical properties of InAs quantum dots: Common trends

Physical review. B, Condensed matter, 1999-03, Vol.59 (11), p.7620-7623

1999

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Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

Applied physics letters, 1997-06, Vol.70 (23), p.3140-3142

1997

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Vertically stacked quantum dots grown by ALMBE and MBE

Journal of crystal growth, 1999-05, Vol.201, p.1136-1138

1999

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Deep levels in virtually unstrained InGaAs layers deposited on GaAs

Journal of applied physics, 1998-09, Vol.84 (5), p.2965-2967

1998

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Photoluminescence study of heavy doping effects in Te-doped GaSb

Journal of applied physics, 1997-06, Vol.81 (11), p.7540-7547

1997

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Optical functions of bulk and epitaxial GaSb from 0.0025 to 6 eV

Solid state communications, 1997, Vol.101 (2), p.93-98

1997

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Self-aggregated InAs quantum dots in GaAs

Journal of applied physics, 1998-05, Vol.83 (10), p.5529-5535

1998

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Composition control of GaSbAs alloys

Journal of crystal growth, 1999-05, Vol.201, p.858-860

1999

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Lattice strain relaxation study in the Ga1−xAlxSb/GaSb system by high resolution x-ray diffraction

Applied physics letters, 1997-09, Vol.71 (11), p.1549-1551

1997

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Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.185-189

1995

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Molecular Beam Epitaxy and Low-Dimensional Structures

Materials science forum, 1998-01, Vol.276-277, p.207-222

1998

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Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

Journal of crystal growth, 1996-07, Vol.165 (1-2), p.8-14

1996

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Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

Journal of crystal growth, 1993-09, Vol.132 (3), p.427-434

1993

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Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.429-432

1994

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Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

Journal of crystal growth, 1996-12, Vol.169 (3), p.450-456

1996

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Engineered Schottky barriers on n-In0.35Ga0.65As

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1-3), p.248-251

2001

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Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.844-848

1995

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Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy

Semiconductor science and technology, 1996-11, Vol.11 (11), p.1656-1667

1996

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Thermoreflectance study of the direct energy gap of GaSb

Solid state communications, 1997-10, Vol.104 (2), p.81-84

1997

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Concentration dependence of optical absorption in tellurium-doped GaSb

Semiconductor science and technology, 1997-07, Vol.12 (7), p.858-866

1997

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Infrared reflectance study of n-type GaSb epitaxial layers

Solid state communications, 1997-12, Vol.104 (12), p.747-751

1997

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Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots

Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

Photoluminescence study of exciton–optical phonon scattering in bulk GaAs and GaAs quantum wells

Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

Optical properties of InAs quantum dots: Common trends

Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

Vertically stacked quantum dots grown by ALMBE and MBE

Deep levels in virtually unstrained InGaAs layers deposited on GaAs

Photoluminescence study of heavy doping effects in Te-doped GaSb

Optical functions of bulk and epitaxial GaSb from 0.0025 to 6 eV

Self-aggregated InAs quantum dots in GaAs

Composition control of GaSbAs alloys

Lattice strain relaxation study in the Ga1−xAlxSb/GaSb system by high resolution x-ray diffraction

Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

Molecular Beam Epitaxy and Low-Dimensional Structures

Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions

Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

Engineered Schottky barriers on n-In0.35Ga0.65As

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy

Thermoreflectance study of the direct energy gap of GaSb

Concentration dependence of optical absorption in tellurium-doped GaSb

Infrared reflectance study of n-type GaSb epitaxial layers

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