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Identification of the Structure of Nanoscale Layers of Multilayer Heterocomposites using Transmission Electron Microscopy

Semiconductors (Woodbury, N.Y.), 2023, Vol.57 (1), p.1-10

2023

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Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Semiconductors (Woodbury, N.Y.), 2023, Vol.57 (1), p.58-64

2023

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Simulation of Silicon Carbide Sputtering by a Focused Gallium Ion Beam

Semiconductors (Woodbury, N.Y.), 2022-12, Vol.56 (13), p.487-492

2022

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Melting temperature of metal polycrystalline nanowires electrochemically deposited into the pores of anodic aluminum oxide

Physical chemistry chemical physics : PCCP, 2014-09, Vol.16 (36), p.19394-1941

2014

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Turbostratic pyrocarbon structure study by means of exit wave reconstruction from high-resolution transmission electron microscopy

Physica status solidi. C, 2015-08, Vol.12 (8), p.1179-1182

2015

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Structural studies of Al thin layer on misoriented GaAs(100) substrate by transmission electron microscopy

Physica status solidi. C, 2015-08, Vol.12 (8), p.1148-1151

2015

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Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate

Surface investigation, x-ray, synchrotron and neutron techniques, 2022-08, Vol.16 (4), p.490-496

2022

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Study of Gallium-Ion-Induced Silicon Amorphization by Matching Experimental and Simulated Electron-Microscopy Images

Surface investigation, x-ray, synchrotron and neutron techniques, 2020-09, Vol.14 (5), p.956-960

2020

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Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

Crystallography reports, 2021, Vol.66 (6), p.1167-1167

2021

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Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates

Semiconductors (Woodbury, N.Y.), 2021, Vol.55 (13), p.1033-1038

2021

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Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

Crystallography reports, 2021-07, Vol.66 (4), p.687-693

2021

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Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (15), p.1986-1991

2019

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Simulation of Redeposited Silicon Sputtering under Focused Ion Beam Irradiation

Surface investigation, x-ray, synchrotron and neutron techniques, 2018-05, Vol.12 (3), p.607-612

2018

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The influence of the atomic structure of basal planes on interplanar distance in pyrolytic carbon materials

Technical physics letters, 2016-12, Vol.42 (12), p.1137-1140

2016

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Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

Semiconductors (Woodbury, N.Y.), 2017-08, Vol.51 (8), p.1067-1071

2017

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EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS

Bulletin of the Lebedev Physics Institute, 2020-12, Vol.47 (12), p.365-370

2020

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Mesoscopic properties of interfacial ordering in amorphous germanium on Si(111) determined by quantitative digital image series matching

Ultramicroscopy, 2013-03, Vol.126, p.1-9

2013

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Atomic structure of the interface between silicon (111) and amorphous germanium

Physical review. B, Condensed matter and materials physics, 2004-11, Vol.70 (19), p.195307.1-195307.12, Article 195307

2004

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Electron Diffraction Analysis of the Structure of Carbon Nanopillars along the Growth Direction

Surface investigation, x-ray, synchrotron and neutron techniques, 2018-05, Vol.12 (3), p.473-479

2018

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Electron Microscopic Study of the Influence of Annealing on Ge–Sb–Te Thin Films Obtained by Vacuum Thermal Evaporation

Surface investigation, x-ray, synchrotron and neutron techniques, 2019-09, Vol.13 (5), p.962-966

2019

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Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (13), p.1753-1758

2016

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Analysis of high resolution transmission electron microscope images of crystalline–amorphous interfaces

Ultramicroscopy, 2002-04, Vol.90 (4), p.241-258

2002

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Electron microscopy study of turbostratic pyrolytic carbon atomic structure using the exit wave reconstruction technique

Bulletin of the Russian Academy of Sciences. Physics, 2015-11, Vol.79 (11), p.1353-1359

2015

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Ferroelectric memory: state-of-the-art manufacturing and research

Rossijskij tehnologičeskij žurnal, 2020-10, Vol.8 (5), p.44-67

2020

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Investigation of condensation of small portions of Ag at thermal evaporation in vacuum

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12014

2015

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Identification of the Structure of Nanoscale Layers of Multilayer Heterocomposites using Transmission Electron Microscopy

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Simulation of Silicon Carbide Sputtering by a Focused Gallium Ion Beam

Melting temperature of metal polycrystalline nanowires electrochemically deposited into the pores of anodic aluminum oxide

Turbostratic pyrocarbon structure study by means of exit wave reconstruction from high-resolution transmission electron microscopy

Structural studies of Al thin layer on misoriented GaAs(100) substrate by transmission electron microscopy

Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate

Study of Gallium-Ion-Induced Silicon Amorphization by Matching Experimental and Simulated Electron-Microscopy Images

Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates

Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation

Simulation of Redeposited Silicon Sputtering under Focused Ion Beam Irradiation

The influence of the atomic structure of basal planes on interplanar distance in pyrolytic carbon materials

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS

Mesoscopic properties of interfacial ordering in amorphous germanium on Si(111) determined by quantitative digital image series matching

Atomic structure of the interface between silicon (111) and amorphous germanium

Electron Diffraction Analysis of the Structure of Carbon Nanopillars along the Growth Direction

Electron Microscopic Study of the Influence of Annealing on Ge–Sb–Te Thin Films Obtained by Vacuum Thermal Evaporation

Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy

Analysis of high resolution transmission electron microscope images of crystalline–amorphous interfaces

Electron microscopy study of turbostratic pyrolytic carbon atomic structure using the exit wave reconstruction technique

Ferroelectric memory: state-of-the-art manufacturing and research

Investigation of condensation of small portions of Ag at thermal evaporation in vacuum

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