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Importance of detailed soil surveys for Conservation Agriculture

South African journal of plant and soil, 2021-05, Vol.38 (3), p.258-263

2021

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Verkenning van interetniese afstand by ge- selekteerde hoërskoolleerlinge in Potchefstroom

Communicare: Journal for Communication Studies in Africa, 2022-11, Vol.3 (1), p.8-21

2022

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The Introduction of Misfit Dislocations in HgCdTe Epitaxial Layers

December 16, 2021, Vol.80, Number 2, p.663-668

2021

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Die rol van profete as verskaffers van alternatiewe mediese sorg

Curationis (Pretoria), 1993-05, Vol.16 (4), p.3-11

Booyens, J. H.

1993

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Dislocations and the piezoelectric effect in III-V crystals

Journal of applied physics, 1977, Vol.48 (7), p.3008-3013

1977

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The anomalous Hall effect for n-type Hg0.8Cd0.2Te grown by the solid state recrystallisation technique

Semiconductor science and technology, 1988-02, Vol.3 (2), p.150-153

1988

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Traditional health care in South Africa - diverse ideas and convergent practice

Koers (Potchefstroom, South Africa), 1991-03, Vol.56 (3)

Booyens, J. H.

1991

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Stress-strain considerations in the CdTE/GaAs heterostructure system

South African journal of science, 1988-08, Vol.84 (8), p.705

Booysens, H. and Basson, J.H.

1988

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The application of elastobirefringence to the study of strain fields and dislocations in III–V compounds

Journal of applied physics, 1980-01, Vol.51 (8), p.4368-4374

1980

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On the stress-induced electrical properties of point defects in the sphalerite structure. I. The piezoelectric effect

Journal of applied physics, 1979-02, Vol.50 (2), p.1047-1049

1979

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On the stress-induced electrical properties of point defects in the sphalerite structure. II. The piezoresistance effect

Journal of applied physics, 1979-02, Vol.50 (2), p.1050-1052

1979

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Aetiology as social comment on life amongst Tswana-speaking urbanites

African studies (Johannesburg), 1985-01, Vol.44 (2), p.137-157

Booyens, J. H.

1985

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The analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence

Journal of applied physics, 1980-01, Vol.51 (8), p.4375-4378

1980

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The introduction of misfit dislocations in HgCdTe epitaxial layers

Physica status solidi. A, Applied research, 1983-12, Vol.80 (2), p.663-668

1983

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Thermal stability of Pb-alloy Josephson junction electrode materials. IV. Effects of crystal structure of Pb-Bi counter electrodes

Journal of applied physics, 1982-01, Vol.53 (1), p.337-345

1982

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Correlation between carrier concentration in Hg0.8Cd0.2Te and chlorine density as determined by SIMS

Journal of crystal growth, 1988-05, Vol.88 (3), p.391-396

1988

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Piezoelectric coupling and dislocations in III-V compounds

Journal of applied physics, 1979-06, Vol.50 (6), p.4302-4306

1979

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Strain effects associated with SiO layers evaporated onto GaAs

Journal of applied physics, 1983-01, Vol.54 (10), p.5779-5784

1983

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Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe

Physica status solidi. A, Applied research, 1984-09, Vol.85 (1), p.243-248

1984

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Some reflections on a conference: Commitment and theory

Development southern Africa (Sandton, South Africa), 1989-02, Vol.6 (1), p.115-118

Booyens, J H

1989

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The Behavior of Dislocations in GaAs Substrates During the Growth of GaxAl1 -- xAs Epitaxial Layers

Journal of applied physics, 1981-01, Vol.52 (6), p.4112-4114

1981

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Quartz ampoule effects on the quench rates of Hg0.8Cd0.2Te grown by the solid state recrystallization technique

Journal of crystal growth, 1985-01, Vol.71 (2), p.391-394

1985

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GaAs surface oxidation-related photoluminescence transients

Surface science, 1983-08, Vol.130 (2), p.259-268

1983

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The anisotropic carrier mobility due to dislocations in III-V compounds

Journal of applied physics, 1978-01, Vol.49 (3), p.1173-1176

1978

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The effect of substrate relaxation on the introduction of misfit dislocations in misfitting epitaxial layers

Physica status solidi. A, Applied research, 1981-04, Vol.64 (2), p.777-786

1981

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Importance of detailed soil surveys for Conservation Agriculture

Verkenning van interetniese afstand by ge- selekteerde hoërskoolleerlinge in Potchefstroom

The Introduction of Misfit Dislocations in HgCdTe Epitaxial Layers

Die rol van profete as verskaffers van alternatiewe mediese sorg

Dislocations and the piezoelectric effect in III-V crystals

The anomalous Hall effect for n-type Hg0.8Cd0.2Te grown by the solid state recrystallisation technique

Traditional health care in South Africa - diverse ideas and convergent practice

Stress-strain considerations in the CdTE/GaAs heterostructure system

The application of elastobirefringence to the study of strain fields and dislocations in III–V compounds

On the stress-induced electrical properties of point defects in the sphalerite structure. I. The piezoelectric effect

On the stress-induced electrical properties of point defects in the sphalerite structure. II. The piezoresistance effect

Aetiology as social comment on life amongst Tswana-speaking urbanites

The analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence

The introduction of misfit dislocations in HgCdTe epitaxial layers

Thermal stability of Pb-alloy Josephson junction electrode materials. IV. Effects of crystal structure of Pb-Bi counter electrodes

Correlation between carrier concentration in Hg0.8Cd0.2Te and chlorine density as determined by SIMS

Piezoelectric coupling and dislocations in III-V compounds

Strain effects associated with SiO layers evaporated onto GaAs

Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe

Some reflections on a conference: Commitment and theory

The Behavior of Dislocations in GaAs Substrates During the Growth of GaxAl1 -- xAs Epitaxial Layers

Quartz ampoule effects on the quench rates of Hg0.8Cd0.2Te grown by the solid state recrystallization technique

GaAs surface oxidation-related photoluminescence transients

The anisotropic carrier mobility due to dislocations in III-V compounds

The effect of substrate relaxation on the introduction of misfit dislocations in misfitting epitaxial layers

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