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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Mobility enhancement in strained p-InGaSb quantum wells

Applied physics letters, 2007-07, Vol.91 (4)

2007

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Enhancing hole mobility in III-V semiconductors

Journal of applied physics, 2012-05, Vol.111 (10), p.103706-103706-12

2012

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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

Journal of applied physics, 2011-06, Vol.109 (11), p.114908-114908-7

2011

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Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

Journal of crystal growth, 2008-12, Vol.311 (1), p.47-53

2008

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Enhanced hole mobility and density in GaSb quantum wells

Solid-state electronics, 2013-01, Vol.79, p.274-280

2013

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Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2012-04, Vol.100 (14), p.143503-143503-4

2012

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Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1397-1403

2011

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Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3407-3415

2011

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Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Journal of crystal growth, 2009-12, Vol.312 (1), p.37-40

2009

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Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InxGa1-xSb quantum wells

Solid-state electronics, 2011-08, Vol.62 (1), p.138-141

2011

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Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

Journal of electronic materials, 2011, Vol.40 (1), p.6-10

2011

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InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Journal of applied physics, 2011-07, Vol.110 (1)

2011

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Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Journal of crystal growth, 2014-02, Vol.388, p.92-97

2014

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Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

IEEE electron device letters, 2014-11, Vol.35 (11), p.1088-1090

2014

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Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- \kappa Dielectric

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.434-440

2017

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Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

Applied physics letters, 2011-01, Vol.98 (5)

2011

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Effect of Interface States on the Performance of Antimonide nMOSFETs

IEEE electron device letters, 2013-03, Vol.34 (3), p.360-362

2013

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Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

IEEE electron device letters, 2011-12, Vol.32 (12), p.1689-1691

2011

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Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

MRS bulletin, 2009-07, Vol.34 (7), p.530-536

2009

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Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2691-2696

2012

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Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3262-3266

2010

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High-frequency, 6.2 Å pN heterojunction diodes

Solid-state electronics, 2012, Vol.67 (1), p.105-108

2012

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Optimization of the \hbox\hbox/ \hbox Interface and a High-Mobility GaSb pMOSFET

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3407-3415

2011

Volltextzugriff (PDF)

Low-Frequency Noise in AlSb/InAs and Related HEMTs

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1193-1202

2007

Volltextzugriff (PDF)

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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Mobility enhancement in strained p-InGaSb quantum wells

Enhancing hole mobility in III-V semiconductors

Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

Enhanced hole mobility and density in GaSb quantum wells

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InxGa1-xSb quantum wells

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- \kappa Dielectric

Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

Effect of Interface States on the Performance of Antimonide nMOSFETs

Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

High-frequency, 6.2 Å pN heterojunction diodes

Optimization of the \hbox\hbox/ \hbox Interface and a High-Mobility GaSb pMOSFET

Low-Frequency Noise in AlSb/InAs and Related HEMTs

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