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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Journal of crystal growth, 1994-07, Vol.140 (3-4), p.249-263

1994

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Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2506-2513

2001

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IEEE_Xplore

Thermal processing induced plastic deformation in GaAs wafers

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.91-94

2001

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MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.112-115

2001

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Nature, origin and effect of dislocations in epitaxial semiconductor layers

Journal of crystal growth, 1978-12, Vol.45, p.407-425

1978

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The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

Journal of crystal growth, 1971-05, Vol.9, p.132-138

1971

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Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

Solid-state electronics, 1980-08, Vol.23 (8), p.831-838

1980

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Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL

Microscopy and microanalysis, 2000-08, Vol.6 (S2), p.1102-1103

2000

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Electron microscope study of epitaxial silicon films on sapphire and diamond substrates

Thin solid films, 1976-01, Vol.31 (1), p.53-67

1976

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Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.217-224

1996

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Laser annealing of capped and uncapped GaAs

Electronics letters, 1979-01, Vol.15 (14), p.413-414

1979

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Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Journal of crystal growth, 1996, Vol.158 (1), p.37-42

1996

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Growth of InAs/GaSb strained layer superlattices. I

Journal of crystal growth, 1994-12, Vol.145 (1), p.778-785

1994

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Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

Ultramicroscopy, 1994-08, Vol.55 (2), p.183-195

1994

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Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Journal of crystal growth, 1992-11, Vol.124 (1), p.249-254

1992

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Growth of [formula omitted] strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.777-782

1997

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Dislocation imaging with a scanning proton microprobe using channeling scanning transmission ion microscopy (CSTIM)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-05, Vol.77 (1), p.320-331

1993

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Effects of annealing on doped and undoped ion beam synthesised CoSi 2 structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994, Vol.84 (2), p.139-142

1994

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Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2139-2146

1992

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IEEE_Xplore

Formation of thin silicon films using low energy oxygen ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.555-560

1991

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Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-02, Vol.84 (2), p.242-247

1994

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Growth of [formula omitted] strained layer superlattices. II

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.495-502

1995

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Control of the buried SiO 2 layer thickness and Si defect density in SIMOX substrates — structural investigation and process optimisation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993, Vol.74 (1), p.197-203

1993

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Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.94-99

1993

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Observations of individual precipitate particles associated with the same dislocations within a bulk In-doped GaAs specimen before and after furnace annealing

Materials letters, 1990-08, Vol.9 (12), p.521-525

1990

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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Thermal processing induced plastic deformation in GaAs wafers

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Nature, origin and effect of dislocations in epitaxial semiconductor layers

The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL

Electron microscope study of epitaxial silicon films on sapphire and diamond substrates

Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

Laser annealing of capped and uncapped GaAs

Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Growth of InAs/GaSb strained layer superlattices. I

Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Growth of [formula omitted] strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

Dislocation imaging with a scanning proton microprobe using channeling scanning transmission ion microscopy (CSTIM)

Effects of annealing on doped and undoped ion beam synthesised CoSi 2 structures

Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

Formation of thin silicon films using low energy oxygen ion implantation

Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation

Growth of [formula omitted] strained layer superlattices. II

Control of the buried SiO 2 layer thickness and Si defect density in SIMOX substrates — structural investigation and process optimisation

Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP

Observations of individual precipitate particles associated with the same dislocations within a bulk In-doped GaAs specimen before and after furnace annealing

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