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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Journal of crystal growth, 1994-07, Vol.140 (3-4), p.249-263

1994

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Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2506-2513

2001

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Creep Properties of Advanced Heat-Resistant Martensitic Steels Strengthened by L1o Type Ordered Intermetallic Phase

Key engineering materials, 1999-10, Vol.171-174, p.505-512

1999

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Heterogeneous Changes in Microstructure and Degradation Behaviour of 9Cr-1Mo-V-Nb Steel During Long Term Creep

Key engineering materials, 1999-10, Vol.171-174, p.483-490

1999

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Contribution of Tungsten to Microstructure Stabilization and Improvement of Creep Resistance in Simple 9Cr-W Steels

Key engineering materials, 1999-10, Vol.171-174, p.395-402

Booker, G.R.

1999

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Thermal processing induced plastic deformation in GaAs wafers

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.91-94

2001

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Nature, origin and effect of dislocations in epitaxial semiconductor layers

Journal of crystal growth, 1978-12, Vol.45, p.407-425

1978

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The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

Journal of crystal growth, 1971-05, Vol.9, p.132-138

1971

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Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

Solid-state electronics, 1980-08, Vol.23 (8), p.831-838

1980

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Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial Layers

MRS proceedings, 1989, Vol.163

1989

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Microstructuural Evolution in SUS304H Steel during Long-Term Creep Over 105 h

Key engineering materials, 1999-10, Vol.171-174, p.513-520

1999

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Creep Characteristics of Precipitation Hardened Carbon Free Martensitic Alloys

Key engineering materials, 1999-10, Vol.171-174, p.491-498

1999

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Electron microscope study of epitaxial silicon films on sapphire and diamond substrates

Thin solid films, 1976, Vol.31 (1), p.53-67

1976

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Laser annealing of capped and uncapped GaAs

Electronics letters, 1979-01, Vol.15 (14), p.413-414

1979

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Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.217-224

1996

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Comparison of surface polishing techniques used for InP wafers

Journal of crystal growth, 1995, Vol.153 (1), p.1-5

1995

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Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Journal of crystal growth, 1996, Vol.158 (1), p.37-42

1996

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Acceleration of Fe2W Precipitation and Its Effect on Creep Deformation Behavior of 8.5Cr-2W-VNb Steels with Si

Key engineering materials, 1999-10, Vol.171-174, p.469-476

1999

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Backscattered electron contrast on cross sections of interfaces and multilayers in the scanning electron microscope

Ultramicroscopy, 1995-06, Vol.58 (3), p.233-237

1995

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Mechanical Properties of 11Cr-0.4Mo-2W-CuVNb Steel Welded Joints at Elevated Temperatures

Key engineering materials, 1999-10, Vol.171-174, p.521-528

1999

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Growth of InAs/GaSb strained layer superlattices. I

Journal of crystal growth, 1994-12, Vol.145 (1), p.778-785

1994

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Recent Results of Long-Term Creep Rupture Test

Key engineering materials, 1999-10, Vol.171-174, p.17-24

1999

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Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

Ultramicroscopy, 1994-08, Vol.55 (2), p.183-195

1994

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Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Journal of crystal growth, 1992-11, Vol.124 (1), p.249-254

1992

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Growth of [formula omitted] strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.777-782

1997

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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Creep Properties of Advanced Heat-Resistant Martensitic Steels Strengthened by L1o Type Ordered Intermetallic Phase

Heterogeneous Changes in Microstructure and Degradation Behaviour of 9Cr-1Mo-V-Nb Steel During Long Term Creep

Contribution of Tungsten to Microstructure Stabilization and Improvement of Creep Resistance in Simple 9Cr-W Steels

Thermal processing induced plastic deformation in GaAs wafers

Nature, origin and effect of dislocations in epitaxial semiconductor layers

The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial Layers

Microstructuural Evolution in SUS304H Steel during Long-Term Creep Over 105 h

Creep Characteristics of Precipitation Hardened Carbon Free Martensitic Alloys

Electron microscope study of epitaxial silicon films on sapphire and diamond substrates

Laser annealing of capped and uncapped GaAs

Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

Comparison of surface polishing techniques used for InP wafers

Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Acceleration of Fe2W Precipitation and Its Effect on Creep Deformation Behavior of 8.5Cr-2W-VNb Steels with Si

Backscattered electron contrast on cross sections of interfaces and multilayers in the scanning electron microscope

Mechanical Properties of 11Cr-0.4Mo-2W-CuVNb Steel Welded Joints at Elevated Temperatures

Growth of InAs/GaSb strained layer superlattices. I

Recent Results of Long-Term Creep Rupture Test

Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Growth of [formula omitted] strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

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