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Electromagnetic diffraction of light focused through a planar interface between materials of mismatched refractive indices: an integral representation

Journal of the Optical Society of America. A, Optics, image science, and vision, 1995-02, Vol.12 (2), p.325

1995

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Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Journal of crystal growth, 1994-07, Vol.140 (3-4), p.249-263

1994

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An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations

Journal of applied physics, 1987, Vol.61 (1), p.225-233

1987

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Electromagnetic diffraction of light focused through a planar interface between materials of mismatched refractive indices: structure of the electromagnetic field I

Journal of the Optical Society of America. A, Optics, image science, and vision, 1995-10, Vol.12 (10), p.2136

1995

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Activation energy for fluorine transport in amorphous silicon

Applied physics letters, 1999-12, Vol.75 (23), p.3671-3673

1999

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Thermal processing induced plastic deformation in GaAs wafers

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.91-94

2001

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Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: possible relationship to surface reconstruction occurring during layer growth

Journal of applied physics, 1990-03, Vol.67 (5), p.2310-2319

1990

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Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

Journal of applied physics, 1985-01, Vol.57 (10), p.4715-4720

1985

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Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2506-2513

2001

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Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Journal of crystal growth, 1996, Vol.158 (1), p.37-42

1996

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Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1-y molecular-beam epitaxial layers

Journal of applied physics, 1993-06, Vol.73 (12), p.8227-8236

1993

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Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers

Journal of applied physics, 1994-06, Vol.75 (12), p.7852-7865

1994

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Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy

Journal of the Korean Physical Society, 2008, 52(2), , pp.471-475

2008

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Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

Applied physics letters, 1999-04, Vol.74 (14), p.2041-2043

1999

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Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?

Applied physics letters, 1991-12, Vol.59 (25), p.3324-3326

1991

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Comparison of surface polishing techniques used for InP wafers

Journal of crystal growth, 1995, Vol.153 (1), p.1-5

1995

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Structural studies of natural superlattices in group III-V alloy epitaxial layers

Semiconductor science and technology, 1993-01, Vol.8 (1S), p.S9-S15

1993

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The scanning infrared microscope (SIRM) and its application to bulk GaAs and Si: a review

Semiconductor science and technology, 1992-01, Vol.7 (1A), p.A110-A121

1992

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Backscattered electron contrast on cross sections of interfaces and multilayers in the scanning electron microscope

Ultramicroscopy, 1995-06, Vol.58 (3), p.233-237

1995

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A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories

Journal of the Electrochemical Society, 1996-01, Vol.143 (1), p.210-215

1996

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Infrared laser scanning microscopy in transmission: a new high-resolution technique for the study of inhomogeneities in bulk GaAs

Applied physics letters, 1987-10, Vol.51 (17), p.1331-1333

1987

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Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

Ultramicroscopy, 1994-08, Vol.55 (2), p.183-195

1994

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A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon

Journal of applied physics, 1991-03, Vol.69 (6), p.3503-3511

1991

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Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers

Journal of applied physics, 1991-07, Vol.70 (1), p.182-192

1991

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Transmission electron microscopy and scanning transmission electron microscope analysis of the effects of thermal processing on the structural integrity of GaInAs/GaInAsP multilayers

Journal of applied physics, 1993-05, Vol.73 (9), p.4297-4304

1993

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Electromagnetic diffraction of light focused through a planar interface between materials of mismatched refractive indices: an integral representation

Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations

Electromagnetic diffraction of light focused through a planar interface between materials of mismatched refractive indices: structure of the electromagnetic field I

Activation energy for fluorine transport in amorphous silicon

Thermal processing induced plastic deformation in GaAs wafers

Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: possible relationship to surface reconstruction occurring during layer growth

Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1-y molecular-beam epitaxial layers

Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers

Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy

Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?

Comparison of surface polishing techniques used for InP wafers

Structural studies of natural superlattices in group III-V alloy epitaxial layers

The scanning infrared microscope (SIRM) and its application to bulk GaAs and Si: a review

Backscattered electron contrast on cross sections of interfaces and multilayers in the scanning electron microscope

A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories

Infrared laser scanning microscopy in transmission: a new high-resolution technique for the study of inhomogeneities in bulk GaAs

Deconvolution method to obtain composition profiles from SEM backscattered electron signal profiles for bulk specimens

A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon

Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers

Transmission electron microscopy and scanning transmission electron microscope analysis of the effects of thermal processing on the structural integrity of GaInAs/GaInAsP multilayers

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