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Stress-induced voiding under vias connected to wide Cu metal leads

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.312-321

2002

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Conference spotlight - International electron devices meeting celebrates 50 years

IEEE circuits and devices magazine, 2004-09, Vol.20 (5), p.39-41

2004

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Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

Microscopy and microanalysis, 2005-08, Vol.11 (S02), p.2096-2097

2005

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Aluminum spiking at contact windows in Al/Ti-W/Si

Applied physics letters, 1988-01, Vol.52 (4), p.272-274

1988

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Hillocks on half-micron aluminum lines

Journal of materials research, 1991-09, Vol.6 (9), p.1817-1819

1991

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The properties of thermal hillocks as a function of linewidth and process parameter in Al-on-chemical-vapor-deposited W films

Journal of materials research, 1993-05, Vol.8 (5), p.1010-1018

1993

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Time resolved spectroscopy of xenon excimers excited by synchrotron radiation

The Journal of chemical physics, 1980-03, Vol.72 (5), p.2914-2924

1980

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Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

IEEE electron device letters, 1984-11, Vol.5 (11), p.468-470

1984

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Edge-defined self-alignment of submicrometer overlaid devices

IEEE electron device letters, 1984-10, Vol.5 (10), p.428-429

1984

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Benchmarks for interconnect parasitic resistance and capacitance

Fourth International Symposium on Quality Electronic Design, 2003. Proceedings, 2003, p.163-168

2003

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Electronic energy transfer in argon–xenon mixtures excited by electron bombardment

The Journal of chemical physics, 1977-02, Vol.66 (4), p.1589-1593

1977

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A systematic approach to interconnect modeling and process monitoring

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003, p.114-116

2003

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BEOL variability and impact on RC extraction

Proceedings. 42nd Design Automation Conference, 2005, 2005, p.758-759

2005

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Failure Mode Detection and Process Optimization for 65 nm CMOS Technology

2006 IEEE International Symposium on Semiconductor Manufacturing, 2006, p.18-21

2006

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Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

2012 IEEE 62nd Electronic Components and Technology Conference, 2012, p.319-325

2012

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Development of a stacked WCSP package platform using TSV (Through Silicon Via) technology

2012 IEEE 62nd Electronic Components and Technology Conference, 2012, p.1062-1067

2012

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Collisional mixing of the lowest bound molecular states in xenon and argon

Chemical physics letters, 1976-08, Vol.42 (1), p.125-128

1976

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XeF2 photodissociation studies. I. Quantum yields and kinetics of XeF( B ) and XeF( C )

The Journal of chemical physics, 1981-11, Vol.75 (10), p.4840-4846

1981

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The Properties of Thermal Hillocks as a Function of Linewidth and Process Parameter in Aluminum-on-Chemical-Vapor-Deposited Tungsten Films

Journal of materials research, 1993-05, Vol.8 (5), p.1010-1018

1993

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Microstructural Characterization of Al sub 98.5 Si sub 1.0 Cu sub 0.5 (wt.%) on Chemical-Vapor-Deposited Tungsten

Journal of materials research, 1993-05, Vol.8 (5), p.1001-1009

1993

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Microstructural Characterization of Al98.5Si1.0Cu0.5 (wt.%) on Chemical-Vapor-Deposited Tungsten

Journal of materials research, 1993-05, Vol.8 (5), p.1001-1009

1993

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Time Resolved Spectroscopy Using Synchrotron Radiation

IEEE transactions on nuclear science, 1981-01, Vol.28 (2), p.1220-1224

1981

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Microstructural characterization of Al98.5wt. %Si1.0wt. %Cu0.5wt. % on chemical-vapor-deposited W

Journal of materials research, 1993-05, Vol.8 (5), p.1001-1009

1993

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Interconnect modeling for copper/low-k technologies

17th International Conference on VLSI Design. Proceedings, 2004, p.425-427

2004

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Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

2006 International Workshop on Junction Technology, 2006, p.127-133

2006

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Stress-induced voiding under vias connected to wide Cu metal leads

Conference spotlight - International electron devices meeting celebrates 50 years

Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

Aluminum spiking at contact windows in Al/Ti-W/Si

Hillocks on half-micron aluminum lines

The properties of thermal hillocks as a function of linewidth and process parameter in Al-on-chemical-vapor-deposited W films

Time resolved spectroscopy of xenon excimers excited by synchrotron radiation

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

Edge-defined self-alignment of submicrometer overlaid devices

Benchmarks for interconnect parasitic resistance and capacitance

Electronic energy transfer in argon–xenon mixtures excited by electron bombardment

A systematic approach to interconnect modeling and process monitoring

BEOL variability and impact on RC extraction

Failure Mode Detection and Process Optimization for 65 nm CMOS Technology

Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

Development of a stacked WCSP package platform using TSV (Through Silicon Via) technology

Collisional mixing of the lowest bound molecular states in xenon and argon

XeF2 photodissociation studies. I. Quantum yields and kinetics of XeF( B ) and XeF( C )

The Properties of Thermal Hillocks as a Function of Linewidth and Process Parameter in Aluminum-on-Chemical-Vapor-Deposited Tungsten Films

Microstructural Characterization of Al sub 98.5 Si sub 1.0 Cu sub 0.5 (wt.%) on Chemical-Vapor-Deposited Tungsten

Microstructural Characterization of Al98.5Si1.0Cu0.5 (wt.%) on Chemical-Vapor-Deposited Tungsten

Time Resolved Spectroscopy Using Synchrotron Radiation

Microstructural characterization of Al98.5wt. %Si1.0wt. %Cu0.5wt. % on chemical-vapor-deposited W

Interconnect modeling for copper/low-k technologies

Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

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