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Design study of an antiproton trap for the GBAR experiment

Journal of instrumentation, 2022-10, Vol.17 (10), p.T10003

2022

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Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

ACS applied materials & interfaces, 2020-05, Vol.12 (18), p.20645-20652

2020

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Photoresponsive behavior of electron-beam irradiated MoS2 films

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4517-4523

2024

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Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Nature communications, 2023-03, Vol.14 (1), p.1386-1386, Article 1386

2023

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Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

Scientific reports, 2017-06, Vol.7 (1), p.1-11, Article 3874

2017

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Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.393-399

2024

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An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2080-2087

2022

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Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors

Optics express, 2021-06, Vol.29 (12), p.18037-18058

2021

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Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3390-3395

2024

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Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1996-2000

2023

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Contact and Interface Engineering of MoS2-Based Photodetectors Using Electron-Beam Irradiation

Electronic materials letters, 2023-11, Vol.19 (6), p.564-570

2023

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Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

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Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity

IEEE transactions on nanotechnology, 2019, Vol.18, p.1200-1203

2019

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Growth Behavior of SiO2 Films on Polyimide Substrates after Ion-Beam Treatment

Journal of the Korean Physical Society, 2019, 75(8), , pp.591-596

2019

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Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced electronic materials, 2023-05, Vol.9 (5), p.n/a

2023

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Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Advanced electronic materials, 2024-01, Vol.10 (1), p.n/a

2024

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Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Effect of Sputtering Parameters on Molybdenum Disulfide Thin Films Synthesized by Radio Frequency Magnetron Sputtering and Electron-Beam Irradiation

Applied Science and Convergence Technology, 2020-11, Vol.29 (6), p.186-189

2020

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Enhanced Split TCP with End-to-End Protocol Semantics over Wireless Networks

2017 IEEE Wireless Communications and Networking Conference (WCNC), 2017, p.1-6

2017

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Aqueous Processing of Sintered Reaction-Bonded Silicon Nitride: I, Dispersion Properties of Silicon Powder

Journal of the American Ceramic Society, 1997-07, Vol.80 (7), p.1781-1788

1997

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LTE application and congestion performance

Bell Labs technical journal, 2013-06, Vol.18 (1), p.5-25

2013

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LWIP and Wi-Fi Boost Flow Control

2017 IEEE Wireless Communications and Networking Conference (WCNC), 2017, p.1-6

2017

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On the high capacity lightradio™ metro cell design for stadiums

Bell Labs technical journal, 2013-09, Vol.18 (2), p.77-97

2013

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Direct WS2 photodetector fabrication on a flexible substrate

Vacuum, 2021-02, Vol.184, p.109950, Article 109950

2021

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Design study of an antiproton trap for the GBAR experiment

Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

Photoresponsive behavior of electron-beam irradiated MoS2 films

Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors

Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

Contact and Interface Engineering of MoS2-Based Photodetectors Using Electron-Beam Irradiation

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity

Growth Behavior of SiO2 Films on Polyimide Substrates after Ion-Beam Treatment

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing

Effect of Sputtering Parameters on Molybdenum Disulfide Thin Films Synthesized by Radio Frequency Magnetron Sputtering and Electron-Beam Irradiation

Enhanced Split TCP with End-to-End Protocol Semantics over Wireless Networks

Aqueous Processing of Sintered Reaction-Bonded Silicon Nitride: I, Dispersion Properties of Silicon Powder

LTE application and congestion performance

LWIP and Wi-Fi Boost Flow Control

On the high capacity lightradio™ metro cell design for stadiums

Direct WS2 photodetector fabrication on a flexible substrate

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