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High-power ridge-waveguide laser diodes and highly dense arrays with stable lateral far field based on them (1060nm)

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

Physica. B, Condensed matter, 2019-06, Vol.563, p.62-71

2019

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Ultrathin nano-sized Al2O3 strips on the surface of por-Si

Materials science in semiconductor processing, 2015-11, Vol.39, p.551-558

2015

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Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

Physica. B, Condensed matter, 2016-08, Vol.495, p.54-63

2016

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Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.184-188

2018

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Investigations of nanodimensional [Al.sub.2][O.sub.3] films deposited by ion-plasma sputtering onto porous silicon

Semiconductors (Woodbury, N.Y.), 2015-07, p.915

2015

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Properties of AlN films deposited by reactive ion-plasma sputtering

Semiconductors (Woodbury, N.Y.), 2015-10, Vol.49 (10), p.1383-1387

2015

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Structure and optical properties of thin [Al.sub.2][O.sub.3] films deposited by the reactive ion-plasma sputtering method on GaAs substrates

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1527

2014

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Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1261-1272

2016

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On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

Semiconductors (Woodbury, N.Y.), 2014-10, Vol.48 (10), p.1342-1347

2014

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AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1079-1083

2013

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Analysis of high-repetition-rate high-power laser pulse generation dynamics using a one-dimensional model of rate equations

2024 International Conference Laser Optics (ICLO), 2024, p.120-120

2024

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1207-1210

2012

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Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Semiconductors (Woodbury, N.Y.), 2011-09, Vol.45 (9), p.1227-1230

2011

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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Semiconductors (Woodbury, N.Y.), 2011-10, Vol.45 (10), p.1364-1368

2011

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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

Semiconductors (Woodbury, N.Y.), 2010-10, Vol.44 (10), p.1370-1374

2010

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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1531-1536

1991

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High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers

IEEE journal of quantum electronics, 1991-06, Vol.27:6

1991

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High power SCH-SQW InGaAsP/GaAs laser diodes without DLD-induced sudden mode failures

12th IEEE International Conference on Semiconductor Laser, 1990, p.238-239

1990

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Effects of spatial dispersion on the Casimir force between graphene sheets

The European physical journal. B, Condensed matter physics, 2012-11, Vol.85 (11), Article 365

2012

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Study of the Cyclic Durability of Fiberglass Polymer Concrete for the Repair and Restoration of Structures of Transport Facilities

Stroitel'nye Materialy, 2023 (1-2), p.11-17

2023

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Prospects for the use of phosphocreatine sodium salt in complex therapy in the rehabilitation of patients who have undergone a new coronavirus infection

Profilakticheskaya meditsina, 2020, Vol.23 (6), p.118

2020

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Phase transitions and caloric effects in ferroelectric solid solutions of ammonium and rubidium hydrosulfates

Physics of the solid state, 2011-03, Vol.53 (3), p.510-517

2011

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PROBLEMS OF ORGANIC FARMING DEVELOPMENT IN RUSSIAN FEDERATION

THEORETICAL & APPLIED PROBLEMS OF AGRO-INDUSTRY, 2020-09, Vol.3 (45), p.14-18

2020

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High-power ridge-waveguide laser diodes and highly dense arrays with stable lateral far field based on them (1060nm)

Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

Ultrathin nano-sized Al2O3 strips on the surface of por-Si

Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

Investigations of nanodimensional [Al.sub.2][O.sub.3] films deposited by ion-plasma sputtering onto porous silicon

Properties of AlN films deposited by reactive ion-plasma sputtering

Structure and optical properties of thin [Al.sub.2][O.sub.3] films deposited by the reactive ion-plasma sputtering method on GaAs substrates

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

Analysis of high-repetition-rate high-power laser pulse generation dynamics using a one-dimensional model of rate equations

Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers

High power SCH-SQW InGaAsP/GaAs laser diodes without DLD-induced sudden mode failures

Effects of spatial dispersion on the Casimir force between graphene sheets

Study of the Cyclic Durability of Fiberglass Polymer Concrete for the Repair and Restoration of Structures of Transport Facilities

Prospects for the use of phosphocreatine sodium salt in complex therapy in the rehabilitation of patients who have undergone a new coronavirus infection

Phase transitions and caloric effects in ferroelectric solid solutions of ammonium and rubidium hydrosulfates

PROBLEMS OF ORGANIC FARMING DEVELOPMENT IN RUSSIAN FEDERATION

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