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Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM

IEEE transactions on computers, 2017-05, Vol.66 (5), p.912-918

2017

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IEEE_Xplore

Advantages of SiSb phase-change material and its applications in phase-change memory

Applied physics letters, 2007-11, Vol.91 (22)

2007

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A 40-nm 16-Mb Contact-Programming Mask ROM Using Dual Trench Isolation Diode Bitcell

IEEE transactions on very large scale integration (VLSI) systems, 2016-04, Vol.24 (4), p.1333-1341

2016

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IEEE_Xplore

Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

Applied physics letters, 2011-07, Vol.99 (3), p.032105-032105-3

2011

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Phase change memory cell using tungsten trioxide bottom heating layer

Applied physics letters, 2008-06, Vol.92 (22), p.223507-223507-3

2008

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Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Applied surface science, 2006-10, Vol.252 (24), p.8404-8409

2006

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Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Applied surface science, 2007-05, Vol.253 (14), p.6125-6129

2007

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Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application

Applied physics. A, Materials science & processing, 2011-06, Vol.103 (4), p.1077-1081

2011

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Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

Thin solid films, 2005-05, Vol.478 (1-2), p.49-55

2005

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Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

IEEE electron device letters, 2011-08, Vol.32 (8), p.1014-1016

2011

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IEEE_Xplore

Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

Thin solid films, 2008-09, Vol.516 (21), p.7871-7874

2008

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Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Applied surface science, 2008-06, Vol.254 (17), p.5602-5606

2008

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Nano composite Si2Sb2Te film for phase change memory

Thin solid films, 2011-06, Vol.519 (16), p.5684-5688

2011

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Investigation of electron beam induced phase change in Si2Sb2Te5 material

Applied physics. A, Materials science & processing, 2008-03, Vol.90 (3), p.451-455

2008

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Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si–Sb–Te films for phase-change memory

Thin solid films, 2011-11, Vol.520 (3), p.1155-1159

2011

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Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory

Journal of applied physics, 2007-04, Vol.101 (7), p.074502-074502-5

2007

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Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

Microelectronic engineering, 2005-10, Vol.82 (2), p.168-174

2005

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Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film

Thin solid films, 2007-11, Vol.516 (1), p.42-46

2007

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Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

Journal of electronic materials, 2005-02, Vol.34 (2), p.176-181

2005

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Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory

Semiconductor science and technology, 2004-06, Vol.19 (6), p.L61-L64

2004

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Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film

Applied surface science, 2005-03, Vol.242 (1-2), p.62-69

2005

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Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

Solid-state electronics, 2009-03, Vol.53 (3), p.276-278

2009

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Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7L), p.L602

2007

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Endurance characteristics of phase change memory cells

Journal of semiconductors, 2016-05, Vol.37 (5), p.65-68

霍如如蔡道林陈邦明陈一峰王玉婵王月青魏宏阳王青夏洋洋高丹宋志棠

2016

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Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

Scripta materialia, 2008-06, Vol.58 (11), p.977-980

2008

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Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM

Advantages of SiSb phase-change material and its applications in phase-change memory

A 40-nm 16-Mb Contact-Programming Mask ROM Using Dual Trench Isolation Diode Bitcell

Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

Phase change memory cell using tungsten trioxide bottom heating layer

Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application

Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Nano composite Si2Sb2Te film for phase change memory

Investigation of electron beam induced phase change in Si2Sb2Te5 material

Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si–Sb–Te films for phase-change memory

Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory

Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory

Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film

Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

Endurance characteristics of phase change memory cells

Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

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