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Electroluminescence in the visible range during anodic oxidation of porous silicon films

Applied physics letters, 1991-07, Vol.59 (3), p.304-306

1991

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Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers

Surface science, 1991-08, Vol.254 (1), p.195-200

1991

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Porous silicon: The material and its applications in silicon-on-insulator technologies

Applied surface science, 1990-01, Vol.41-42, p.604-613

1990

Volltextzugriff (PDF)

Porous silicon: The material and its applications to SOI technologies

Microelectronic engineering, 1988, Vol.8 (3), p.293-310

1988

Volltextzugriff (PDF)

Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

Journal of crystal growth, 1984-01, Vol.68 (3), p.727-732

1984

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Characterization of photoluminescent porous Si by small-angle scattering of x rays

Applied physics letters, 1992-05, Vol.60 (21), p.2625-2627

1992

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Silicon-on-insulator: materials aspects and technological applications

Vacuum, 1990, Vol.41 (4), p.781-783

Bomchil, G

1990

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Small-angle x-ray scattering study of anodically oxidized porous silicon layers

Journal of applied physics, 1994-01, Vol.75 (2), p.780-784

1994

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The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates

Journal of applied physics, 1987-08, Vol.62 (3), p.1042-1048

1987

Volltextzugriff (PDF)

Porous silicon: material properties, visible photo- and electroluminescence

Applied surface science, 1993-01, Vol.65 (1-4), p.394-407

1993

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X-ray small-angle scattering analysis of porous silicon layers

Journal of applied physics, 1989-07, Vol.66 (2), p.625-628

1989

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Stress in oxidized porous silicon layers

Journal of applied physics, 1986-01, Vol.59 (2), p.439-441

1986

Volltextzugriff (PDF)

Microstructure of Porous silicon and its evolution with temperature

Materials letters, 1984, Vol.2 (6), p.519-523

1984

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X-ray topographic characterization of porous silicon layers

Journal of crystal growth, 1984-01, Vol.68 (3), p.721-726

1984

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SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiency

Journal of luminescence, 1993-11, Vol.57 (1), p.141-145

1993

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Influence of the doping level on the microstructure of P-type porous silicon studied by small-angle X-ray scattering

Journal of applied crystallography, 1991-10, Vol.24 (5), p.581-587

1991

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Correlation between the Porous Silicon Morphology and the Photoluminescence Efficiency

Physica status solidi. B. Basic research, 1995-07, Vol.190 (1), p.63-68

1995

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Influence of oxygen on the formation of refractory metal silicides

Thin solid films, 1986-06, Vol.140 (1), p.59-70

1986

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Study of the diffusion path during the lateral growth in the salicide process

Applied surface science, 1991-11, Vol.53, p.391-395

1991

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Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor

Applied surface science, 1989-09, Vol.38 (1-4), p.408-415

1989

Volltextzugriff (PDF)

Application of porous silicon formation selectivity to impurity profiling in p -type silicon substrates

Journal of applied physics, 1989-10, Vol.66 (8), p.3814-3819

1989

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Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology

Applied surface science, 1991-11, Vol.53, p.18-23

1991

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Low-pressure vapor-phase epitaxy of silicon on porous silicon

Materials letters, 1988-09, Vol.7 (3), p.94-98

1988

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Characteristics of SOI CMOS circuits made in N/N+/N oxidised porous silicon structures

Electronics letters, 1986, Vol.22 (24), p.1291-1293

1986

Volltextzugriff (PDF)

Formation and characterization of tungsten silicide layers

Thin solid films, 1985-01, Vol.124 (1), p.19-26

1985

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Electroluminescence in the visible range during anodic oxidation of porous silicon films

Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers

Porous silicon: The material and its applications in silicon-on-insulator technologies

Porous silicon: The material and its applications to SOI technologies

Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

Characterization of photoluminescent porous Si by small-angle scattering of x rays

Silicon-on-insulator: materials aspects and technological applications

Small-angle x-ray scattering study of anodically oxidized porous silicon layers

The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates

Porous silicon: material properties, visible photo- and electroluminescence

X-ray small-angle scattering analysis of porous silicon layers

Stress in oxidized porous silicon layers

Microstructure of Porous silicon and its evolution with temperature

X-ray topographic characterization of porous silicon layers

SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiency

Influence of the doping level on the microstructure of P-type porous silicon studied by small-angle X-ray scattering

Correlation between the Porous Silicon Morphology and the Photoluminescence Efficiency

Influence of oxygen on the formation of refractory metal silicides

Study of the diffusion path during the lateral growth in the salicide process

Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor

Application of porous silicon formation selectivity to impurity profiling in p -type silicon substrates

Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology

Low-pressure vapor-phase epitaxy of silicon on porous silicon

Characteristics of SOI CMOS circuits made in N/N+/N oxidised porous silicon structures

Formation and characterization of tungsten silicide layers

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