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Detection of plant viruses using a surface plasmon resonance via complexing with specific antibodies

Journal of virological methods, 2004-10, Vol.121 (1), p.101-106

2004

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Simple method for plant virus detection: effect of antibody immobilization technique

Journal of virological methods, 2002-08, Vol.105 (1), p.141-146

2002

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Surface capturing of virion-antibody complexes: Kinetic study

Materialwissenschaft und Werkstofftechnik, 2013-03, Vol.44 (2-3), p.112-118

2013

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Surface plasmon resonance: approaches and perspectives of application for virus-specific interactions investigations

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2016-07, Vol.78 (4), p.109-124

2016

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Effect of microwave radiation on optical characteristics of thin gold films

Semiconductor physics, quantum electronics, and optoelectronics, 2011-06, Vol.14 (2), p.209-212

Boltovets, P. M.

2011

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Elaboration of optical immunosensors based on the surface plasmon resonance for detecting specific antibodies and antigens of Epstein-Barr virus and human adenovirus

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2008-11, Vol.70 (6), p.67

2008

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Surface capturing of virion-antibody complexes: Kinetic study; Die Oberflächenbindung von Virion-Antikarper-Komplexen: Eine kinetische Untersuchung

Materialwissenschaft und Werkstofftechnik, 2013-02, Vol.44 (2-3), p.112

2013

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Use of the surface plasmon resonance method for the virological investigations

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2006-05, Vol.68 (3), p.86

2006

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New packaging cells based on the: adapted variant of the Rous sarcoma virus

Biopolimery i kletka, 1999-01, Vol.15 (1), p.67-74

1999

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BIOCHEMICAL SENSOR SYSTEMS ON THE BASE OF THE POROUS FILMS OF THE ALLUMINIUM OXIDE WITH GOLD NANOPARTICLES UNDER CONDITIONS OF THE TOTAL INTERNAL REFLECTANCE

Sensor Electronics and Microsystem Technologies, 2008-06, Vol.5 (3), p.64-68

2008

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Immunospecific detection of the potato virus X by the surface plasmon resonance

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2005-09, Vol.67 (5), p.58

2005

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Detection of antigen-antibody interaction of human adenovirus by the method of surface plasmon resonance

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2005-07, Vol.67 (4), p.58

2005

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Investigation of interaction of immunoglobulins and detection of viral antigens in cell homogenates by the surface plasmon resonance method

Mikrobiolohichnyĭ zhurnal (Kiev, Ukraine : 1993), 2003-07, Vol.65 (4), p.51

2003

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Detection of antiadenoviral antibodies by surface plasmon resonance

Ukrains'kyi biokhimichnyi zhurnal (1999 ), 2009-07, Vol.81 (4), p.39

2009

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Anomalous interfacial architecture in laponite aqueous suspensions on a gold surface

Colloids and surfaces. A, Physicochemical and engineering aspects, 2017-05, Vol.520, p.883-891

2017

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Microwave p-i-n diodes and switches based on 4H-SiC

IEEE electron device letters, 2006-02, Vol.27 (2), p.108-110

2006

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The mechanism of contact-resistance formation on lapped n-Si surfaces

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.449-454

2013

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Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1180-1184

2013

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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Solid-state electronics, 2005-07, Vol.49 (7), p.1228-1232

2005

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Temperature dependences of the contact resistivity in ohmic contacts to n+-InN

Semiconductors (Woodbury, N.Y.), 2015-04, Vol.49 (4), p.461-471

2015

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High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Materials science forum, 2006-10, Vol.527-529, p.1339-1342

2006

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes

Semiconductor physics, quantum electronics, and optoelectronics, 2016-12, Vol.19 (4), p.366-370

Romanets, P.M.

2016

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Microwave p-i-n Diodes and Switches Based on 4H-SiC

Materials science forum, 2007-01, Vol.556-557, p.999-1002

2007

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Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.253-259

2011

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Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

Materials science forum, 2007-01, Vol.556-557, p.933-936

2007

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Detection of plant viruses using a surface plasmon resonance via complexing with specific antibodies

Simple method for plant virus detection: effect of antibody immobilization technique

Surface capturing of virion-antibody complexes: Kinetic study

Surface plasmon resonance: approaches and perspectives of application for virus-specific interactions investigations

Effect of microwave radiation on optical characteristics of thin gold films

Elaboration of optical immunosensors based on the surface plasmon resonance for detecting specific antibodies and antigens of Epstein-Barr virus and human adenovirus

Surface capturing of virion-antibody complexes: Kinetic study; Die Oberflächenbindung von Virion-Antikarper-Komplexen: Eine kinetische Untersuchung

Use of the surface plasmon resonance method for the virological investigations

New packaging cells based on the: adapted variant of the Rous sarcoma virus

BIOCHEMICAL SENSOR SYSTEMS ON THE BASE OF THE POROUS FILMS OF THE ALLUMINIUM OXIDE WITH GOLD NANOPARTICLES UNDER CONDITIONS OF THE TOTAL INTERNAL REFLECTANCE

Immunospecific detection of the potato virus X by the surface plasmon resonance

Detection of antigen-antibody interaction of human adenovirus by the method of surface plasmon resonance

Investigation of interaction of immunoglobulins and detection of viral antigens in cell homogenates by the surface plasmon resonance method

Detection of antiadenoviral antibodies by surface plasmon resonance

Anomalous interfacial architecture in laponite aqueous suspensions on a gold surface

Microwave p-i-n diodes and switches based on 4H-SiC

The mechanism of contact-resistance formation on lapped n-Si surfaces

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

Temperature dependences of the contact resistivity in ohmic contacts to n+-InN

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes

Microwave p-i-n Diodes and Switches Based on 4H-SiC

Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

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