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Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1029-1035

2023

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Multilayer Interference Coatings on the Basis of the Layers of Silicon and Dioxide of Silicon on the Thinning InSb FPA with Increased Mechanical Strength and Reproducibility

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1090-1096

2023

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Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.316-324

2023

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Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.347-351

2020

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Modern Photodetector IR-Modules

Journal of communications technology & electronics, 2022-09, Vol.67 (9), p.1175-1184

2022

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Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.333-336

2021

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Investigation of the Depth and Rate of Ion Etching of QWIP Structures

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.358-361

2021

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MBE-grown InSb photodetector arrays

Technical physics, 2017-06, Vol.62 (6), p.915-919

2017

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Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector

Journal of communications technology & electronics, 2017-03, Vol.62 (3), p.294-298

2017

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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

Journal of communications technology & electronics, 2017-03, Vol.62 (3), p.309-313

2017

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Solid-state photoelectronics of the ultraviolet range (Review)

Journal of communications technology & electronics, 2016-10, Vol.61 (10), p.1175-1185

2016

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Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.366-370

2023

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Focal plane arrays mesastructures formation by ion-beam etching

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.324-327

2016

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Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure

Journal of communications technology & electronics, 2016-10, Vol.61 (10), p.1220-1225

2016

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Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.319-323

2016

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Temperature dependence of diffusion length in MCT epitaxial layers

Journal of communications technology & electronics, 2016-03, Vol.61 (3), p.344-347

2016

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Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer

Journal of communications technology & electronics, 2018-09, Vol.63 (9), p.1119-1126

2018

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Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1046-1054

2019

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Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Journal of communications technology & electronics, 2018-09, Vol.63 (9), p.1132-1136

2018

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Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.283-285

2019

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Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

Journal of communications technology & electronics, 2017-09, Vol.62 (9), p.1061-1065

2017

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Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.319-324

2019

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Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements

Journal of communications technology & electronics, 2018-03, Vol.63 (3), p.300-302

2018

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Effect of the Surface Passivation on the IâV Characteristics of the XBn-InGaAs Focal Plane Arrays

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.366

2023

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Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements

Journal of communications technology & electronics, 2018-03, Vol.63 (3)

2018

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Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures

Multilayer Interference Coatings on the Basis of the Layers of Silicon and Dioxide of Silicon on the Thinning InSb FPA with Increased Mechanical Strength and Reproducibility

Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range

Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions

Modern Photodetector IR-Modules

Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer

Investigation of the Depth and Rate of Ion Etching of QWIP Structures

MBE-grown InSb photodetector arrays

Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

Solid-state photoelectronics of the ultraviolet range (Review)

Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays

Focal plane arrays mesastructures formation by ion-beam etching

Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure

Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Temperature dependence of diffusion length in MCT epitaxial layers

Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer

Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements

Effect of the Surface Passivation on the IâV Characteristics of the XBn-InGaAs Focal Plane Arrays

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements

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