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Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

Materials science in semiconductor processing, 2018-08, Vol.83, p.107-114

2018

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Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments

AIP advances, 2015-10, Vol.5 (10), p.107219-107219-7

2015

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Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling

Journal of applied physics, 2014-07, Vol.116 (2)

2014

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Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy

Applied physics letters, 2007-03, Vol.90 (12), p.122118-122118-3

2007

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Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.415-419

2008

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Scanning tunneling microscopy/spectroscopy as an atomic-resolution dopant profiling method in Si

Journal of physics. Conference series, 2008-03, Vol.106 (1), p.012002

2008

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Correlation between the gap energy and size of single InAs quantum dots on GaAs(001) studied by scanning tunneling spectroscopy

Applied physics letters, 2000-12, Vol.77 (26), p.4368-4370

2000

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Scanning tunneling spectroscopy of Si6H12 clusters deposited on Si(111)-(7 x 7) surfaces

Surface science, 2000-08, Vol.462 (1-3), p.85-89

2000

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Electronic properties of assembled islands of hydrogen-saturated silicon clusters on Si(111)-(7x7) surfaces studied by scanning tunneling spectroscopy

The European physical journal. D, Atomic, molecular, and optical physics, 2001-10, Vol.16 (1-3), p.271-274

2001

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Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Modification of the Si(111) 7 × 7 local electronic surface structure induced by silane adsorption

Chemical physics letters, 1995-09, Vol.243 (5), p.445-449

1995

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Minority carriers contribution and hot-electron injection process in tunnel spectroscopy of H-passivated silicon surfaces

Surface science, 1995-07, Vol.331-333, p.468-472

1995

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Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer

Surface and interface analysis, 1999-05, Vol.27 (5-6), p.533-536

1999

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Stability of Ta-encapsulating Si clusters on Si(111)-(7×7) surfaces

Journal of physics. D, Applied physics, 2003-05, Vol.36 (9), p.L43-L46

2003

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The use of the deuterated internal standard for morphine quantitation for the purpose of doping control by gas chromatography with mass-selective detection

Sudebno-meditsinskaia ekspertiza, 2010-05, Vol.53 (3), p.29

2010

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Erratum to: “Scanning tunneling spectroscopy of Si6H12 clusters deposited on Si(1 1 1)-(7 × 7) surfaces” [Surf. Sci. 462 (2000) 85]

Surface science, 2004-11, Vol.572 (2-3), p.521

2004

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Scanning tunnelling spectroscopy of atomic clusters deposited on oxidized silicon surfaces: induced surface dipole and resonant electron injection

Journal of physics. Condensed matter, 2003-10, Vol.15 (42), p.S3065-S3081

2003

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Low-energy electron irradiation of fullerene films formed on Si(111)-(7×7) surfaces

Applied physics letters, 2002-08, Vol.81 (9), p.1684-1686

2002

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Erratum to: “Scanning tunneling spectroscopy of Si 6H 12 clusters deposited on Si(1 1 1)-(7 × 7) surfaces” [Surf. Sci. 462 (2000) 85]

Surface science, 2004, Vol.572 (2), p.521-521

2004

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Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.365-369

2006

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Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects

Physical review. B, Condensed matter, 1999-05, Vol.59 (19), p.12236-12239

1999

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3D modeling based on current continuity for STM carrier profiling of semiconductor devices

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.259-262

2011

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Thin-layer chromatography with mobile phases of low volatility

Talanta (Oxford), 1987, Vol.34 (1), p.183-189

1987

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Scanning-tunneling-microscope-assisted assembling of hydrogen-saturated silicon clusters on Si(111)-(7×7) surfaces

Applied physics letters, 2001-06, Vol.78 (23), p.3720-3722

2001

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A Quadrupole Ion Trap as Low-Energy Cluster Ion Beam Source

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 2A), p.707-712

2003

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Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments

Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling

Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy

Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy

Scanning tunneling microscopy/spectroscopy as an atomic-resolution dopant profiling method in Si

Correlation between the gap energy and size of single InAs quantum dots on GaAs(001) studied by scanning tunneling spectroscopy

Scanning tunneling spectroscopy of Si6H12 clusters deposited on Si(111)-(7 x 7) surfaces

Electronic properties of assembled islands of hydrogen-saturated silicon clusters on Si(111)-(7x7) surfaces studied by scanning tunneling spectroscopy

Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions

Modification of the Si(111) 7 × 7 local electronic surface structure induced by silane adsorption

Minority carriers contribution and hot-electron injection process in tunnel spectroscopy of H-passivated silicon surfaces

Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer

Stability of Ta-encapsulating Si clusters on Si(111)-(7×7) surfaces

The use of the deuterated internal standard for morphine quantitation for the purpose of doping control by gas chromatography with mass-selective detection

Erratum to: “Scanning tunneling spectroscopy of Si6H12 clusters deposited on Si(1 1 1)-(7 × 7) surfaces” [Surf. Sci. 462 (2000) 85]

Scanning tunnelling spectroscopy of atomic clusters deposited on oxidized silicon surfaces: induced surface dipole and resonant electron injection

Low-energy electron irradiation of fullerene films formed on Si(111)-(7×7) surfaces

Erratum to: “Scanning tunneling spectroscopy of Si 6H 12 clusters deposited on Si(1 1 1)-(7 × 7) surfaces” [Surf. Sci. 462 (2000) 85]

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects

3D modeling based on current continuity for STM carrier profiling of semiconductor devices

Thin-layer chromatography with mobile phases of low volatility

Scanning-tunneling-microscope-assisted assembling of hydrogen-saturated silicon clusters on Si(111)-(7×7) surfaces

A Quadrupole Ion Trap as Low-Energy Cluster Ion Beam Source

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