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Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure

Physics of the solid state, 2019-02, Vol.61 (2), p.145-148

2019

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Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

Journal of applied physics, 2011-06, Vol.109 (12), p.123519-123519-8

2011

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GaAs epitaxy on Si substrates: modern status of research and engineering

Physics Uspekhi, 2008-05, Vol.51 (5), p.437-456

2008

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Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures

Journal of crystal growth, 2018-02, Vol.483, p.265-268

2018

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Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Philosophical magazine letters, 2011-07, Vol.91 (7), p.458-464

2011

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Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation

Semiconductor science and technology, 2012-04, Vol.27 (4), p.43001

2012

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Formation of edge misfit dislocations in Gexsi1-x (x∼0.4-0.5) films grown on misoriented (001 ) -> (111) Si substrates

Journal of crystal growth, 2008-07, Vol.310 (15), p.3422-3427

2008

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Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Journal of crystal growth, 2006-12, Vol.297 (1), p.57-60

2006

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Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Journal of crystal growth, 2006-08, Vol.293 (2), p.247-252

2006

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Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (11), p.1229-1247

2000

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Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Acta materialia, 2013-08, Vol.61 (14), p.5400-5405

2013

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Experimental observation of motion of edge dislocations in Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures

Journal of experimental and theoretical physics, 2016-11, Vol.123 (5), p.832-837

2016

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Specific features of plastic relaxation of a metastable GexSi1 − x layer buried between a silicon substrate and a relaxed germanium layer

Physics of the solid state, 2014-02, Vol.56 (2), p.247-253

2014

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Comment on "Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition" [ Appl. Phys. Lett. 90 , 092108 ( 2007 ) ]

Applied physics letters, 2007-07, Vol.91 (4), p.046101-046101-1

Bolkhovityanov, Yu B.

2007

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Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Journal of crystal growth, 2012, Vol.338 (1), p.12-15

2012

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Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

Physics of the solid state, 2015-04, Vol.57 (4), p.765-770

2015

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Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si films with x > 0.4

Journal of crystal growth, 2010-10, Vol.312 (21), p.3080-3084

2010

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Thin solid films, 2001-07, Vol.392 (1), p.98-106

2001

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Edge misfit dislocations in GexSi1 − x/Si(001) (x ∼ 1) heterostructures: role of buffer GeySi1 − y (y < x) interlayer in their formation

Physics of the solid state, 2011-09, Vol.53 (9)

2011

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Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Physics of the solid state, 2011-10, Vol.53 (10), p.2005-2011

2011

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Molecular beam epitaxy of silicon–germanium nanostructures

Thin solid films, 2000-05, Vol.367 (1-2), p.75-84

2000

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InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

Semiconductor science and technology, 2003-06, Vol.18 (6), p.417-422

2003

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Heteroepitaxy of GexSi1 − x (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

Physics of the solid state, 2010, Vol.52 (1), p.32-36

2010

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Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

Applied physics letters, 2008-03, Vol.92 (13)

2008

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Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

Applied physics letters, 2004-12, Vol.85 (25), p.6140-6142

2004

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Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

GaAs epitaxy on Si substrates: modern status of research and engineering

Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation

Formation of edge misfit dislocations in Gexsi1-x (x∼0.4-0.5) films grown on misoriented (001 ) -> (111) Si substrates

Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Experimental observation of motion of edge dislocations in Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures

Specific features of plastic relaxation of a metastable GexSi1 − x layer buried between a silicon substrate and a relaxed germanium layer

Comment on "Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition" [ Appl. Phys. Lett. 90 , 092108 ( 2007 ) ]

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si films with x > 0.4

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Edge misfit dislocations in GexSi1 − x/Si(001) (x ∼ 1) heterostructures: role of buffer GeySi1 − y (y < x) interlayer in their formation

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Molecular beam epitaxy of silicon–germanium nanostructures

InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

Heteroepitaxy of GexSi1 − x (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

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