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Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices

Journal of crystal growth, 2014-01, Vol.386, p.194-198

2014

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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

Applied physics letters, 2012-08, Vol.101 (9), p.92109

2012

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Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Journal of crystal growth, 2010, Vol.312 (2), p.185-191

2010

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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

Applied physics letters, 2013-05, Vol.102 (20)

2013

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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

Journal of crystal growth, 2019-02, Vol.507, p.46-49

2019

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Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Journal of applied physics, 2012-03, Vol.111 (5), p.053113-053113-4

2012

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GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications

Journal of crystal growth, 2004-08, Vol.268 (3), p.457-465

2004

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Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

Physical review applied, 2016-05, Vol.5 (5), Article 054016

2016

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A review of optical limiting mechanisms and devices using organics, fullerenes, semiconductors and other materials

Progress in quantum electronics, 1993, Vol.17 (4), p.299-338

1993

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Auger recombination in narrow-gap semiconductor superlattices incorporating antimony

Journal of applied physics, 2002-12, Vol.92 (12), p.7311-7316

2002

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Broadband mid-infrared superlattice light-emitting diodes

Journal of applied physics, 2017-05, Vol.121 (18)

2017

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n-type anode layer, high-power MWIR superlattice LED

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

IEEE journal of quantum electronics, 1986-02, Vol.22 (2), p.360-368

1986

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Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

Applied physics letters, 2005-05, Vol.86 (20), p.202114-202114-3

2005

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High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Bias-dependent spin relaxation in a [ 1 1 0 ] -InAs/AlSb 2DES

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.371-373

2006

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Optical limiting in GaAs

IEEE journal of quantum electronics, 1985-05, Vol.21 (5), p.488-494

1985

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Picosecond photorefractive beam coupling in GaAs

Optics letters, 1986-10, Vol.11 (10), p.647

1986

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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Resonant tunneling in (110) oriented interband diodes

Applied physics letters, 2005-02, Vol.86 (7), p.073502-073502-3

2005

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Nonlinear-optical energy regulation by nonlinear refraction and absorption in silicon

Optics letters, 1984-07, Vol.9 (7), p.291

1984

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Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

Journal of applied physics, 2004-08, Vol.96 (3), p.1418-1424

2004

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Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

A review of optical limiting mechanisms and devices using organics, fullerenes, semiconductors and other materials

Auger recombination in narrow-gap semiconductor superlattices incorporating antimony

Broadband mid-infrared superlattice light-emitting diodes

n-type anode layer, high-power MWIR superlattice LED

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

Bias-dependent spin relaxation in a [ 1 1 0 ] -InAs/AlSb 2DES

Optical limiting in GaAs

Picosecond photorefractive beam coupling in GaAs

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Resonant tunneling in (110) oriented interband diodes

Nonlinear-optical energy regulation by nonlinear refraction and absorption in silicon

Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

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