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Raman spectroscopy capabilities for advanced semiconductor technology devices

Applied physics letters, 2024-07, Vol.125 (5)

2024

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Enhanced light coupling into periodic arrays of nanoscale semiconducting fins

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Critical dimension metrology using Raman spectroscopy

Applied physics letters, 2020-07, Vol.117 (4)

2020

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Laser pulsing of field evaporation in atom probe tomography

Current opinion in solid state & materials science, 2014-04, Vol.18 (2), p.81-89

2014

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A variable probe pitch micro-Hall effect method

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.2032-2039

2018

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Electrical characterization of single nanometer-wide Si fins in dense arrays

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.1863-1867

2018

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Taming the Distribution of Light in Gate-All-Around Semiconductor Devices

Nano letters, 2024-01, Vol.24 (4), p.1191-1196

2024

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Size-dependent optical properties of periodic arrays of semiconducting nanolines

Optics express, 2020-03, Vol.28 (5), p.6781-6793

2020

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Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam

Nanotechnology, 2024-07, Vol.35 (28), p.285702

2024

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Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Ultramicroscopy, 2020-03, Vol.210, p.112918-112918, Article 112918

2020

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Apparent size effects on dopant activation in nanometer-wide Si fins

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-03, Vol.39 (2)

2021

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A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography

Microscopy and microanalysis, 2022-08, Vol.28 (4), p.1102-1115

2022

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Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB)

2019

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Advanced Raman Spectroscopy Using Nanofocusing of Light

Advanced engineering materials, 2017-08, Vol.19 (8), p.n/a

2017

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Electrical Contact Formation in Micro Four‐Point Probe Measurements

Physica status solidi. A, Applications and materials science, 2020-03, Vol.217 (5), p.n/a

2020

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Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

Physica status solidi. A, Applications and materials science, 2018-03, Vol.215 (6), p.n/a

2018

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Light absorption in conical silicon particles

Optics express, 2013-02, Vol.21 (3), p.3891-3896

2013

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Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBA04

2019

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Potential sources of compositional inaccuracy in the atom probe tomography of In x Ga 1-x As

Ultramicroscopy, 2020-03, Vol.210, p.112918

2020

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Electrothermal theory of photomodulated optical reflectance on active doping profiles in silicon

Journal of applied physics, 2010-11, Vol.108 (10), p.104908-104908-25

2010

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Nonlinear study of photoelectrothermal modulated optical reflectance for active dopant profile extraction

Journal of applied physics, 2007-03, Vol.101 (5), p.053107-053107-13

2007

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Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1C7

2010

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Impact of inactive dopants in chemical vapor deposition layers on photomodulated optical reflectance

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.234-239

2008

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Advances in optical carrier profiling through high-frequency modulated optical reflectance

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.310-316

2008

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Raman spectroscopy capabilities for advanced semiconductor technology devices

Enhanced light coupling into periodic arrays of nanoscale semiconducting fins

Critical dimension metrology using Raman spectroscopy

Laser pulsing of field evaporation in atom probe tomography

A variable probe pitch micro-Hall effect method

Electrical characterization of single nanometer-wide Si fins in dense arrays

Taming the Distribution of Light in Gate-All-Around Semiconductor Devices

Size-dependent optical properties of periodic arrays of semiconducting nanolines

Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Apparent size effects on dopant activation in nanometer-wide Si fins

A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Advanced Raman Spectroscopy Using Nanofocusing of Light

Electrical Contact Formation in Micro Four‐Point Probe Measurements

Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

Light absorption in conical silicon particles

Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Potential sources of compositional inaccuracy in the atom probe tomography of In x Ga 1-x As

Electrothermal theory of photomodulated optical reflectance on active doping profiles in silicon

Nonlinear study of photoelectrothermal modulated optical reflectance for active dopant profile extraction

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Impact of inactive dopants in chemical vapor deposition layers on photomodulated optical reflectance

Advances in optical carrier profiling through high-frequency modulated optical reflectance

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