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An extensive study of the influence of dopants on the ferroelectric properties of HfO2

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (2), p.333-338

2017

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Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films

Applied physics letters, 2017-05, Vol.110 (18)

2017

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Beyond von Neumann-logic operations in passive crossbar arrays alongside memory operations

Nanotechnology, 2012-08, Vol.23 (30), p.305205-305205

2012

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The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence

Journal of applied physics, 2002-09, Vol.92 (5), p.2680-2687

2002

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Nucleic acids and melanin pigments after exposure to high doses of gamma rays: a biosignature robustness test

International journal of astrobiology, 2022-10, Vol.21 (5), p.296-307

2022

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Capacity based nondestructive readout for complementary resistive switches

Nanotechnology, 2011-09, Vol.22 (39), p.395203-1-7

2011

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The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. II. Numerical simulation and verification

Journal of applied physics, 2002-09, Vol.92 (5), p.2688-2696

2002

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Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films

Journal of applied physics, 2001-02, Vol.89 (4), p.2332-2336

2001

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PZT thin films for piezoelectric microactuator applications

Sensors and actuators. A, Physical, 2002-04, Vol.97, p.680-684

2002

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Ferroelectricity in hafnium oxide thin films

Applied physics letters, 2011-09, Vol.99 (10), p.102903-102903-3

2011

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Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

Journal of applied physics, 2017-04, Vol.121 (15)

2017

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Interface-related thickness dependence of the tunability in BaSrTiO3 thin films

Applied physics letters, 2004-11, Vol.85 (20), p.4708-4710

2004

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Doped ZrO2 for future lead free piezoelectric devices

Journal of applied physics, 2018-01, Vol.123 (4)

2018

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Ferroelectricity in yttrium-doped hafnium oxide

Journal of applied physics, 2011-12, Vol.110 (11), p.114113-114113-5

2011

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Phase transitions in ferroelectric silicon doped hafnium oxide

Applied physics letters, 2011-09, Vol.99 (11), p.112904-112904-3

2011

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Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

Journal of applied physics, 2017-07, Vol.122 (2)

2017

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Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

Applied physics letters, 2011-09, Vol.99 (11)

2011

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Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Study of the SET switching event of VCM-based memories on a picosecond timescale

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

APL materials, 2019-09, Vol.7 (9), p.091105-091105-9

2019

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Impact of the processing temperature on the laser-based crystallization of chemical solution deposited lead zirconate titanate thin films on short timescales

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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About the deformation of ferroelectric hystereses

Applied physics reviews, 2014-12, Vol.1 (4), p.41103

2014

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Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films

Applied physics letters, 2002-02, Vol.80 (8), p.1427-1429

2002

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Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films

Applied physics letters, 2000-09, Vol.77 (12), p.1894-1896

2000

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An extensive study of the influence of dopants on the ferroelectric properties of HfO2

Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films

Beyond von Neumann-logic operations in passive crossbar arrays alongside memory operations

The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence

Nucleic acids and melanin pigments after exposure to high doses of gamma rays: a biosignature robustness test

Capacity based nondestructive readout for complementary resistive switches

The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. II. Numerical simulation and verification

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films

PZT thin films for piezoelectric microactuator applications

Ferroelectricity in hafnium oxide thin films

Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

Interface-related thickness dependence of the tunability in BaSrTiO3 thin films

Doped ZrO2 for future lead free piezoelectric devices

Ferroelectricity in yttrium-doped hafnium oxide

Phase transitions in ferroelectric silicon doped hafnium oxide

Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Study of the SET switching event of VCM-based memories on a picosecond timescale

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

Impact of the processing temperature on the laser-based crystallization of chemical solution deposited lead zirconate titanate thin films on short timescales

About the deformation of ferroelectric hystereses

Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films

Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films

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