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Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.99-105

2019

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Defect-Assisted Tunneling via Ni/n-GaN Schottky Barriers

Technical physics, 2024-05, Vol.69 (5), p.1146-1153

2024

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Two modes of HVPE growth of GaN and related macrodefects

Physica status solidi. C, 2013-03, Vol.10 (3), p.468-471

2013

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Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.934-941

2018

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Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12203

2020

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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Applied physics letters, 2010-03, Vol.96 (13)

2010

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Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1369-1376

2016

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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12004

2019

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Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2006-05, Vol.40 (5), p.605-610

2006

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Hopping conductivity and dielectric relaxation in Schottky barriers on GaN

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1186-1193

2017

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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Technical physics letters, 2016-11, Vol.42 (11), p.1099-1102

2016

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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.115-121

2017

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Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1079-1087

2014

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Hydride vapor phase epitaxy system for bulk gan layers deposition

NAUCHNOE PRIBOROSTROENIE, 2018-12, Vol.28 (4), p.20-22

2018

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ICP etching of III-nitride based laser structure with Cl 2 –Ar plasma assisted by Si coverplate material

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.687-692

2005

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Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1665-1670

2015

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Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (5), p.594-599

2005

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.827-835

2015

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Nonuniformity of carrier injection and the degradation of blue LEDs

Semiconductors (Woodbury, N.Y.), 2006-01, Vol.40 (1), p.118-123

2006

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Space-Charge-Limited Efficiency of Electrically-Injected Carriers Localization

Physics of the Solid State, 2023, Vol.65 (1), p.133

2023

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.699-704

2016

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The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (7), p.795-799

2005

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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.127-134

2013

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Semiconductors (Woodbury, N.Y.), 2012-08, Vol.46 (8), p.1032-1039

2012

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Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Defect-Assisted Tunneling via Ni/n-GaN Schottky Barriers

Two modes of HVPE growth of GaN and related macrodefects

Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Hopping conductivity and dielectric relaxation in Schottky barriers on GaN

The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

Hydride vapor phase epitaxy system for bulk gan layers deposition

ICP etching of III-nitride based laser structure with Cl 2 –Ar plasma assisted by Si coverplate material

Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Nonuniformity of carrier injection and the degradation of blue LEDs

Space-Charge-Limited Efficiency of Electrically-Injected Carriers Localization

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

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