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Thermal conductivity of irradiated porous silicon down to the oxide limit investigated by Raman thermometry and scanning thermal microscopy

Journal of applied physics, 2020-11, Vol.128 (17)

2020

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Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

Applied physics letters, 2017-08, Vol.111 (6)

2017

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Tunable mid IR plasmon in GZO nanocrystals

Nanoscale, 2015-07, Vol.7 (28), p.12030-12037

2015

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Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied physics letters, 2010-02, Vol.96 (7), p.072107-072107-3

2010

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A review of in situ methodologies for studying elastohydrodynamic lubrication

Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology, 2016-01, Vol.230 (1), p.86-110

2016

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Influence of the interfacial chemical environment on the luminescence of 3CSiC nanoparticles

Journal of applied physics, 2010-01, Vol.107 (1)

2010

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Direct synthesis of luminescent SiC quantum dots in water by laser ablation

Physica status solidi. PSS-RRL. Rapid research letters, 2011-08, Vol.5 (8), p.292-294

2011

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Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer

Applied physics letters, 2012-03, Vol.100 (10), p.102107-102107-4

2012

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YAG:Ce nanoparticle lightsources

Nanotechnology, 2013-04, Vol.24 (16), p.165703-165703

2013

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Application of 3C-SiC quantum dots for living cell imaging

Applied physics letters, 2008-04, Vol.92 (17)

2008

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Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.297-302

2003

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Strain dependence of the direct energy bandgap in thin silicon on insulator layers

Journal of physics. D, Applied physics, 2010-06, Vol.43 (25), p.255401-255401

2010

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Photoluminescence study of an ultrathin strained silicon on insulator layer

Applied physics letters, 2007-01, Vol.90 (4), p.042110-042110-3

2007

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Intense visible emission from ZnO/PAAX (X = H or Na) nanocomposite synthesized via a simple and scalable sol-gel method

Scientific reports, 2016-03, Vol.6 (1), p.23557, Article 23557

2016

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Deep traps analysis in AlGaN/GaN heterostructure transistors

Physica status solidi. C, 2010-01, Vol.7 (1), p.92-95

2010

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Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Microelectronics and reliability, 2009, Vol.49 (9), p.1216-1221

2009

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Optical strain measurement in ultrathin sSOI wafer

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.18-21

2006

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Swift heavy ion irradiation reduces porous silicon thermal conductivity

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-12, Vol.341, p.27-31

2014

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Strain dependence of indirect band gap for strained silicon on insulator wafers

Applied physics letters, 2008-09, Vol.93 (10)

2008

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Photoluminescence of 6H–SiC nanostructures fabricated by electrochemical etching

Journal of applied physics, 2007-10, Vol.102 (8)

2007

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Activation of aluminum implanted at high doses in 4H–SiC

Journal of applied physics, 2000-08, Vol.88 (4), p.1971-1977

2000

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UV scanning photoluminescence spectroscopy applied to silicon carbide characterisation

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.277-283

2003

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Deep levels investigation of AlGaN/GaN heterostructure transistors

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4877-4879

2009

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Thickness dependence of photoluminescence for tensely strained silicon layer on insulator

Applied physics letters, 2008-11, Vol.93 (19)

2008

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The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface

Solid state communications, 1996-07, Vol.99 (3), p.195-199

1996

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Thermal conductivity of irradiated porous silicon down to the oxide limit investigated by Raman thermometry and scanning thermal microscopy

Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

Tunable mid IR plasmon in GZO nanocrystals

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

A review of in situ methodologies for studying elastohydrodynamic lubrication

Influence of the interfacial chemical environment on the luminescence of 3CSiC nanoparticles

Direct synthesis of luminescent SiC quantum dots in water by laser ablation

Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer

YAG:Ce nanoparticle lightsources

Application of 3C-SiC quantum dots for living cell imaging

Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

Photoluminescence study of an ultrathin strained silicon on insulator layer

Intense visible emission from ZnO/PAAX (X = H or Na) nanocomposite synthesized via a simple and scalable sol-gel method

Deep traps analysis in AlGaN/GaN heterostructure transistors

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Optical strain measurement in ultrathin sSOI wafer

Swift heavy ion irradiation reduces porous silicon thermal conductivity

Strain dependence of indirect band gap for strained silicon on insulator wafers

Photoluminescence of 6H–SiC nanostructures fabricated by electrochemical etching

Activation of aluminum implanted at high doses in 4H–SiC

UV scanning photoluminescence spectroscopy applied to silicon carbide characterisation

Deep levels investigation of AlGaN/GaN heterostructure transistors

Thickness dependence of photoluminescence for tensely strained silicon layer on insulator

The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface

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