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Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1387-1395

2008

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Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.851-858

2006

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High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1318-1323

2007

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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Electronics letters, 2009, Vol.45 (10), p.501

2009

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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

IEEE journal of quantum electronics, 2008-08, Vol.44 (8), p.724-731

2008

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Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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1550-nm waveband VCSELs made by wafer-fusion technique

2022 International Conference Laser Optics (ICLO), 2022, p.01-01

2022

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Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Quantum electronics (Woodbury, N.Y.), 2019-02, Vol.49 (2), p.187-180

2019

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Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1186-1190

2016

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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1390-1395

2016

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Emission-Line Width and [alpha]-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.93

2018

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Laser Source for Compact Nuclear Magnetic Resonance Gyroscope

Giroskopiya i Navigatsiya, 2018, Vol.26 (1), p.81-92

2018

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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1431-1434

2017

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Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1127-1132

2017

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Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1657-1663

2014

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Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.88-91

2015

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Microdisk injection lasers for the 1.27-µm spectral range

Semiconductors (Woodbury, N.Y.), 2016-03, p.390

2016

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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

Semiconductors (Woodbury, N.Y.), 2013-07, Vol.47 (7), p.993-996

2013

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Efficient electro-optic semiconductor medium based on type-II heterostructures

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1528-1538

2013

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Wafer-fused 1550-nm VCSELs with the active region based on InGaAlAs and InGaAs QWs

2024 International Conference Laser Optics (ICLO), 2024, p.138-138

2024

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Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.77-82

2014

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High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.695-700

2013

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Noise performance of 89Xnm single-mode VCSELs

2024 International Conference Laser Optics (ICLO), 2024, p.133-133

2024

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Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

Semiconductors (Woodbury, N.Y.), 2013-06, Vol.47 (6), p.844-848

2013

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Effect of the discharge velocity of the heterophase flow on the physical-mechanical properties of the electric metallizing flow

Welding International, 2014-06, Vol.28 (6), p.491-494

2014

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Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE

1550-nm waveband VCSELs made by wafer-fusion technique

Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

Emission-Line Width and [alpha]-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

Laser Source for Compact Nuclear Magnetic Resonance Gyroscope

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

Microdisk injection lasers for the 1.27-µm spectral range

Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

Efficient electro-optic semiconductor medium based on type-II heterostructures

Wafer-fused 1550-nm VCSELs with the active region based on InGaAlAs and InGaAs QWs

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

Noise performance of 89Xnm single-mode VCSELs

Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

Effect of the discharge velocity of the heterophase flow on the physical-mechanical properties of the electric metallizing flow

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