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The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

Plasma sources science & technology, 2010-02, Vol.19 (1), p.015012-015012 (10)

2010

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Dry etching of SiC in inductively coupled Cl2/Ar plasma

Journal of physics. D, Applied physics, 2004-07, Vol.37 (13), p.1809-1814

2004

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The etching of silicon carbide in inductively coupled SF6/O2 plasma

Journal of physics. D, Applied physics, 2003-03, Vol.36 (5), p.482-487

2003

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Temperature influence on etching deep holes with SF6/O2 cryogenic plasma

Journal of micromechanics and microengineering, 2002-07, Vol.12 (4), p.390-394, Article 307

2002

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Gas Sensing with Atomic Layer Deposited Dielectric Thin Film

Key engineering materials, 2014-04, Vol.605, p.71-74

2014

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High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-09, Vol.24 (5), p.1823-1830

2006

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A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas

Review of scientific instruments, 2008-11, Vol.79 (11), p.115104-115104

2008

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Capacitive Sensing of Carbon Dioxide with Ultrathin Metal Oxide Film

Sensor letters, 2014-10, Vol.12 (10), p.1526-1529

2014

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Dynamics of H atoms surface recombination in low-temperature plasma

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Dry etching of SiC in inductively coupled Cl 2 /Ar plasma

Journal of physics. D, Applied physics, 2004-07, Vol.37 (13), p.1809-1814

2004

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Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Journal of applied physics, 2003-11, Vol.94 (10), p.6311-6318

2003

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Advanced time-multiplexed plasma etching of high aspect ratio silicon structures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-11, Vol.20 (6), p.3106-3110

2002

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Growth and characterisation of organic multilayers on gold grown by organic molecular beam deposition

Optical materials, 1998, Vol.9 (1), p.416-422

1998

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Self-Assembly of π-Conjugated Azomethine Oligomers by Sequential Deposition of Monomers from Solution

Langmuir, 2000-05, Vol.16 (10), p.4547-4553

2000

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Balancing the etching and passivation in time-multiplexed deep dry etching of silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2930-2934

2001

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Room Temperature Sensing of O 2 and CO by Atomic Layer Deposition Prepared ZnO Films Coated with Pt Nanoparticles

ECS transactions, 2013, Vol.58 (10), p.203-214

2013

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Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-11, Vol.18 (6), p.3453-3461

2000

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Tunneling spectroscopy study and modeling of electron transport in small conjugated azomethine molecules

Physical review. B, Condensed matter, 2000-10, Vol.62 (15), p.10459-10466

2000

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Growth and scanning tunneling spectroscopy of self-assembled π-conjugated oligomers

Materials Science & Engineering C, 1999-12, Vol.8, p.267-272

1999

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A capacitive probe with shaped probe bias for ion flux measurementsin depositing plasmas

Review of scientific instruments, 2008-11, Vol.79 (11), p.115104-115104-4

2008

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Sensitivity Enhancement of Metal Oxide Thin Film Transistor with Back Gate Biasing

Procedia engineering, 2011, Vol.25, p.112-115

2011

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Quasi 2D-ZnO thin film for CO sensing at room temperature

Procedia engineering, 2010, Vol.5, p.172-175

2010

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Oxygen sensing with ZnO thin films

2011 IEEE SENSORS Proceedings, 2011, p.1416-1419

2011

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High-rate plasma-deposited Si O 2 films for surface passivation of crystalline silicon

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-09, Vol.24 (5), p.1823-1830

2006

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The etching of silicon carbide in inductively coupled SF 6 /O 2 plasma

Journal of physics. D, Applied physics, 2003-03, Vol.36 (5), p.482-487

2003

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The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

Dry etching of SiC in inductively coupled Cl2/Ar plasma

The etching of silicon carbide in inductively coupled SF6/O2 plasma

Temperature influence on etching deep holes with SF6/O2 cryogenic plasma

Gas Sensing with Atomic Layer Deposited Dielectric Thin Film

High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas

Capacitive Sensing of Carbon Dioxide with Ultrathin Metal Oxide Film

Dynamics of H atoms surface recombination in low-temperature plasma

Dry etching of SiC in inductively coupled Cl 2 /Ar plasma

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Advanced time-multiplexed plasma etching of high aspect ratio silicon structures

Growth and characterisation of organic multilayers on gold grown by organic molecular beam deposition

Self-Assembly of π-Conjugated Azomethine Oligomers by Sequential Deposition of Monomers from Solution

Balancing the etching and passivation in time-multiplexed deep dry etching of silicon

Room Temperature Sensing of O 2 and CO by Atomic Layer Deposition Prepared ZnO Films Coated with Pt Nanoparticles

Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching

Tunneling spectroscopy study and modeling of electron transport in small conjugated azomethine molecules

Growth and scanning tunneling spectroscopy of self-assembled π-conjugated oligomers

A capacitive probe with shaped probe bias for ion flux measurementsin depositing plasmas

Sensitivity Enhancement of Metal Oxide Thin Film Transistor with Back Gate Biasing

Quasi 2D-ZnO thin film for CO sensing at room temperature

Oxygen sensing with ZnO thin films

High-rate plasma-deposited Si O 2 films for surface passivation of crystalline silicon

The etching of silicon carbide in inductively coupled SF 6 /O 2 plasma

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