UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 42

Sortiert nach

Differentially poised vesicles underlie fast and slow components of release at single synapses

The Journal of general physiology, 2020-05, Vol.152 (5)

2020

Link zum Volltext

Verfügbarkeit prüfen

Altered resting-state functional connectivity in hiPSCs-derived neuronal networks from schizophrenia patients

Frontiers in cell and developmental biology, 2022-09, Vol.10, p.935360-935360

2022

Link zum Volltext

Verfügbarkeit prüfen

Possible ATP trafficking by ATP‐shuttles in the olfactory cilia and glucose transfer across the olfactory mucosa

FEBS letters, 2019-03, Vol.593 (6), p.601-610

2019

Link zum Volltext

Verfügbarkeit prüfen

UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy

Nanotechnology, 2019-06, Vol.30 (23), p.234001-234001

2019

Link zum Volltext

Verfügbarkeit prüfen

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Crystal growth & design, 2016-02, Vol.16 (2), p.596-604

2016

Link zum Volltext

Verfügbarkeit prüfen

Near-field control and imaging of free charge carrier variations in GaN nanowires

Applied physics letters, 2016-02, Vol.108 (7)

2016

Link zum Volltext

Verfügbarkeit prüfen

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Physica status solidi. B, Basic solid state physics : PSS, 2020-04, Vol.257 (4), p.n/a

2020

Link zum Volltext

Verfügbarkeit prüfen

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals (Basel), 2018-09, Vol.8 (9), p.366

2018

Link zum Volltext

Verfügbarkeit prüfen

The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1050

2019

Link zum Volltext

Verfügbarkeit prüfen

On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

Nano letters, 2013-02, Vol.13 (2), p.374-377

2013

Link zum Volltext

Verfügbarkeit prüfen

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Journal of physical chemistry. C, 2021-02, Vol.125 (4), p.2626-2635

2021

Link zum Volltext

Verfügbarkeit prüfen

Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

Crystals (Basel), 2018-04, Vol.8 (4), p.178

2018

Link zum Volltext

Verfügbarkeit prüfen

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy

Nanotechnology, 2020-10, Vol.31 (42), p.424002-424002

2020

Link zum Volltext

Verfügbarkeit prüfen

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Journal of applied physics, 2008-06, Vol.103 (12), p.124309-124309-6

2008

Link zum Volltext

Verfügbarkeit prüfen

Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination

Journal of materials research, 2017-03, Vol.32 (5), p.936-946

2017

Link zum Volltext

Verfügbarkeit prüfen

Measurement of the electrostatic edge effect in wurtzite GaN nanowires

Applied physics letters, 2014-11, Vol.105 (21)

2014

Link zum Volltext

Verfügbarkeit prüfen

The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion1

Japanese journal of applied physics (2008), 2019-05, Vol.58 (SC)

2019

Link zum Volltext

Verfügbarkeit prüfen

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy∗ ∗Contribution of an agency of the U.S. government; not subject to copyright

Nanotechnology, 2020-10, Vol.31 (42)

2020

Link zum Volltext

Verfügbarkeit prüfen

UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy Contribution of an agency of the US government; not subject to copyright

Nanotechnology, 2019-03, Vol.30 (23)

2019

Link zum Volltext

Verfügbarkeit prüfen

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Applied physics letters, 2014-06, Vol.104 (26)

2014

Link zum Volltext

Verfügbarkeit prüfen

MESFETs Made From Individual GaN Nanowires

IEEE transactions on nanotechnology, 2008-11, Vol.7 (6), p.760-765

2008

Link zum Volltext
IEEE_Xplore

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

Applied physics letters, 2006-05, Vol.88 (21), p.213106-213106-3

2006

Link zum Volltext

Verfügbarkeit prüfen

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Nanotechnology, 2014-10, Vol.25 (41), p.415502-415502

2014

Link zum Volltext

Verfügbarkeit prüfen

Establishing an upper bound on contact resistivity of ohmic contacts to n -GaN nanowires

Semiconductor science and technology, 2014-05, Vol.29 (5), p.54005

2014

Link zum Volltext

Verfügbarkeit prüfen

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

Nanotechnology, 2012-09, Vol.23 (36), p.365203-365203

2012

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 42

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(40)
Mit Volltextzugriff
(41)

Publikationsform

Artikel
(41)
Tagungsberichte
(1)

Sprache

Englisch
(42)
Japanisch
(10)

Erscheinungsjahr

n.n

Thema

Science & Technology
(31)
Physical Sciences
(26)
Physics
(22)
Materials Science
(20)
Nanowires
(20)
Materials Science, Multidisciplinary
(18)
Physics, Applied
(18)
Technology
(18)
Gallium Nitride
(13)
Science & Technology - Other Topics
(12)
Gallium Nitrides
(11)
Molecular Beam Epitaxy
(11)
Nanoscience & Nanotechnology
(11)
Engineering
(7)
Engineering, Electrical & Electronic
(7)
Cross-Disciplinary Physics: Materials Science; Rheology
(6)
Electronics
(6)
Exact Sciences And Technology
(6)
Quantum Wires
(6)
Applied Sciences
(5)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Differentially poised vesicles underlie fast and slow components of release at single synapses

Altered resting-state functional connectivity in hiPSCs-derived neuronal networks from schizophrenia patients

Possible ATP trafficking by ATP‐shuttles in the olfactory cilia and glucose transfer across the olfactory mucosa

UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Near-field control and imaging of free charge carrier variations in GaN nanowires

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion

On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination

Measurement of the electrostatic edge effect in wurtzite GaN nanowires

The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion1

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy∗ ∗Contribution of an agency of the U.S. government; not subject to copyright

UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy Contribution of an agency of the US government; not subject to copyright

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

MESFETs Made From Individual GaN Nanowires

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Establishing an upper bound on contact resistivity of ohmic contacts to n -GaN nanowires

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

Suchergebnisse filtern