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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Applied physics letters, 2017-06, Vol.110 (24)

2017

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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Semiconductor science and technology, 2016-06, Vol.31 (6), p.65011

2016

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Semiconductor science and technology, 2017-03, Vol.32 (4)

2017

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Pancreatic solid focal lesions: autoimmune pancreatitis or pancreatic cancer?

Pancreatology : official journal of the International Association of Pancreatology (IAP) ... [et al.], 2020-11, Vol.20, p.S153-S153

2020

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horizontally polarizing liquid trap enhances the tabanid-capturing efficiency of the classic canopy trap

Bulletin of entomological research, 2013-12, Vol.103 (6), p.665-674

2013

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Fit to Burst: Toward Noninvasive Estimation of Achilles Tendon Load Using Burst Vibrations

IEEE transactions on biomedical engineering, 2021-02, Vol.68 (2), p.470-481

2021

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Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization

Applied surface science, 2013-03, Vol.269, p.60-64

2013

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Moving current filaments in integrated DMOS transistors under short-duration current stress

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1695-1703

2004

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Moving current filaments in integrated DMOS transistors under short-duration current stress

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1331-1339

2004

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Technology and application of in-situ AlOx layers on III-V semiconductors

Applied surface science, 2018-12, Vol.461, p.33-38

2018

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Applied surface science, 2017-02, Vol.395, p.140-144

2017

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and density of states reduction

Semiconductor science and technology, 2017-04, Vol.32 (4), p.45018

2017

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Multiple-time-instant 2D thermal mapping during a single ESD event

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1793-1798

2004

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Automated setup for thermal imaging and electrical degradation study of power DMOS devices

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1688-1693

2005

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions

Microelectronics and reliability, 2002-09, Vol.42 (9), p.1281-1286

2002

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Self-aligned normally-off metal-oxide-semiconductor n super(++)GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

Microelectronics and reliability, 2003-04, Vol.43 (4), p.545-548

2003

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A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1557-1561

2003

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Ni/Au-Al sub(2)O sub(3) gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Microelectronic engineering, 2013-12, Vol.112, p.204-207

2013

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Internal behavior of BCD ESD protection devices under very-fast TLP stress

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.235-240

2003

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IEEE_Xplore

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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Pancreatic solid focal lesions: autoimmune pancreatitis or pancreatic cancer?

horizontally polarizing liquid trap enhances the tabanid-capturing efficiency of the classic canopy trap

Fit to Burst: Toward Noninvasive Estimation of Achilles Tendon Load Using Burst Vibrations

Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization

Moving current filaments in integrated DMOS transistors under short-duration current stress

Moving current filaments in integrated DMOS transistors under short-duration current stress

Technology and application of in-situ AlOx layers on III-V semiconductors

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and density of states reduction

Multiple-time-instant 2D thermal mapping during a single ESD event

Automated setup for thermal imaging and electrical degradation study of power DMOS devices

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth

Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions

Self-aligned normally-off metal-oxide-semiconductor n super(++)GaN/InAlN/GaN high electron mobility transistors

Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress

Ni/Au-Al sub(2)O sub(3) gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Internal behavior of BCD ESD protection devices under very-fast TLP stress

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