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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Binary copper oxide semiconductors: From materials towards devices

physica status solidi (b), 2012-08, Vol.249 (8), p.1487-1509

2012

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High Si and Ge n-type doping of GaN doping - Limits and impact on stress

Applied physics letters, 2012-03, Vol.100 (12), p.122104-122104-4

2012

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Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Journal of applied physics, 2017-07, Vol.122 (2)

2017

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Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering

Journal of applied physics, 2023-03, Vol.133 (9)

2023

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Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

New journal of physics, 2007-10, Vol.9 (10), p.389-389

2007

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Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Journal of physics. D, Applied physics, 2010-09, Vol.43 (36), p.365102-365102

2010

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Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction

Applied physics letters, 2017-03, Vol.110 (12)

2017

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Growth of blue GaN LED structures on 150-mm Si(1 1 1)

Journal of crystal growth, 2006-12, Vol.297 (2), p.279-282

2006

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Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

Applied physics letters, 2007-01, Vol.90 (2), p.022105-022105-3

2007

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MOVPE growth of GaN on Si – Substrates and strain

Thin solid films, 2007-03, Vol.515 (10), p.4356-4361

2007

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Germanium - the superior dopant in n-type GaN

Physica status solidi. PSS-RRL. Rapid research letters, 2015-12, Vol.9 (12), p.716-721

2015

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Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Journal of applied physics, 2013-11, Vol.114 (18), p.184311

2013

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High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

Applied physics letters, 2004-11, Vol.85 (22), p.5400-5402

2004

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Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

Journal of crystal growth, 2003-02, Vol.248, p.563-567

2003

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Thermal stability of metal organic vapor phase epitaxy grown AlInN

Applied physics letters, 2007-05, Vol.90 (22), p.221906-221906-3

2007

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Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Journal of crystal growth, 2007-10, Vol.308 (1), p.170-175

2007

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Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Journal of applied physics, 2009-02, Vol.105 (3)

2009

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Preparation of ZnO substrates for epitaxy: Structural, surface,and electrical properties

Applied physics letters, 2007-01, Vol.90 (4), p.042103-042103-3

2007

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Improving GaN-on-silicon properties for GaN device epitaxy

Physica status solidi. C, 2011-05, Vol.8 (5), p.1503-1508

2011

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InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

Journal of physics. D, Applied physics, 2009-03, Vol.42 (5), p.055107-055107 (4)

2009

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Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering

Applied physics letters, 2010-11, Vol.97 (18), p.181105-181105-3

2010

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Anisotropic bow and plastic deformation of GaN on silicon

Journal of crystal growth, 2013-05, Vol.370, p.278-281

2013

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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

Binary copper oxide semiconductors: From materials towards devices

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering

Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction

Growth of blue GaN LED structures on 150-mm Si(1 1 1)

Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

MOVPE growth of GaN on Si – Substrates and strain

Germanium - the superior dopant in n-type GaN

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

Thermal stability of metal organic vapor phase epitaxy grown AlInN

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Preparation of ZnO substrates for epitaxy: Structural, surface,and electrical properties

Improving GaN-on-silicon properties for GaN device epitaxy

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering

Anisotropic bow and plastic deformation of GaN on silicon

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