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MgyNi1−y(Hx) thin films deposited by magnetron co-sputtering

Journal of alloys and compounds, 2012-06, Vol.527, p.76-83

2012

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Electronic transitions at Si(111)/SiO2 and Si(111)/Si3N4 interfaces studied by optical second-harmonic spectroscopy

Physical review letters, 1995-04, Vol.74 (15), p.3001-3004

1995

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Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H-terminated Si surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-07, Vol.12 (4), p.1152-1157

1994

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Correlation between midgap interface state density and thickness-averaged oxide stress and strain Si/SiO2 interfaces formed by thermal oxidation of Si

Applied physics letters, 1990-05, Vol.56 (20), p.1983-1985

1990

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Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si

Journal of applied physics, 1995-01, Vol.77 (1), p.313-317

1995

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Atomic scale morphology of hydrogen-terminated Si(100) surfaces studied by Fourier-transform infrared attenuated total reflection spectroscopy and scanning probe microscopies

Japanese Journal of Applied Physics, 1995, Vol.34 (2B), p.722-726

1995

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Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy

Applied physics letters, 1995-10, Vol.67 (14), p.2049-2051

1995

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Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-05, Vol.16 (3), p.1600-1603

1998

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Second-harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma-assisted oxidation and deposition processes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-07, Vol.11 (4), p.964-970

1993

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Integration of wet-chemical processing with low temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces in Si(111) surfaces

Microelectronic engineering, 1994-08, Vol.25 (2-4), p.217-222

1994

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Local atomic structure at thermally grown Si/SiO2 interfaces

Applied surface science, 1989-10, Vol.39 (1-4), p.103-115

1989

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Thermal relaxation phenomena in the formation of device-quality SiO2/Si interfaces

Japanese journal of applied physics, 1993-12, Vol.32 (12B), p.6196-6199

1993

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Effective electron affinities in doped a-Si:H and μc-Si films as determined from studies of MOS capacitors

Journal of non-crystalline solids, 1991, Vol.137, p.1059-1062, Article 1059

1991

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Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces

MRS proceedings, 1995, Vol.386, Article 177

1995

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Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

MRS proceedings, 1995, Vol.386

1995

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Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

MRS proceedings, 1989, Vol.146

1989

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A Low-Temperature Process for Device Quality Si/SiO2 Interfaces on Si(111)

MRS proceedings, 1993-01, Vol.315 (1), p.375-380

1993

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Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si

MRS proceedings, 1991, Vol.219, Article 395

1991

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Stacked gates with doped μ c -Si electrodes and SiO2 dielectrics, both deposited by remote plasma-enhanced chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992, Vol.10 (4), p.788-791

1992

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Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-07, Vol.7 (4), p.775-781

1989

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Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993, Vol.11 (4), p.1521-1527

1993

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MERIE Induced Flatband Shifts Of MNOS Devices

2nd International Symposium on Plasma Process-Induced Damage, 1997, p.115-118

1997

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Second-harmonic response of chemically modified vicinal Si(111) surfaces

Physical review. B, Condensed matter, 1994-08, Vol.50 (8), p.5506-5511

1994

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Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

Proceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications, 1994, p.89-91

1994

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Association of mutations in the Plasmodium falciparum Kelch13 gene (Pf3D7_1343700) with parasite clearance rates after artemisinin-based treatments-a WWARN individual patient data meta-analysis

BMC medicine, 2019-01, Vol.17 (1), p.1-1, Article 1

2019

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MgyNi1−y(Hx) thin films deposited by magnetron co-sputtering

Electronic transitions at Si(111)/SiO2 and Si(111)/Si3N4 interfaces studied by optical second-harmonic spectroscopy

Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H-terminated Si surfaces

Correlation between midgap interface state density and thickness-averaged oxide stress and strain Si/SiO2 interfaces formed by thermal oxidation of Si

Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si

Atomic scale morphology of hydrogen-terminated Si(100) surfaces studied by Fourier-transform infrared attenuated total reflection spectroscopy and scanning probe microscopies

Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy

Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma

Second-harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma-assisted oxidation and deposition processes

Integration of wet-chemical processing with low temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces in Si(111) surfaces

Local atomic structure at thermally grown Si/SiO2 interfaces

Thermal relaxation phenomena in the formation of device-quality SiO2/Si interfaces

Effective electron affinities in doped a-Si:H and μc-Si films as determined from studies of MOS capacitors

Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

A Low-Temperature Process for Device Quality Si/SiO2 Interfaces on Si(111)

Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si

Stacked gates with doped μ c -Si electrodes and SiO2 dielectrics, both deposited by remote plasma-enhanced chemical vapor deposition

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces

MERIE Induced Flatband Shifts Of MNOS Devices

Second-harmonic response of chemically modified vicinal Si(111) surfaces

Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

Association of mutations in the Plasmodium falciparum Kelch13 gene (Pf3D7_1343700) with parasite clearance rates after artemisinin-based treatments-a WWARN individual patient data meta-analysis

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