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A Biochemical Sensor Based on a Sensing Waveguide With Efficient Analyte Overlap and a Single-Mode DFB Laser

IEEE sensors letters, 2018-03, Vol.2 (1), p.1-3

2018

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IEEE_Xplore

GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.968-972

2009

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IEEE_Xplore

High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 $\mu$m

IEEE photonics technology letters, 2007-07, Vol.19 (14), p.1030-1032

2007

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Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 [micro sign]m

Electronics letters, 2008, Vol.44 (12), p.737

2008

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GaInAsN/GaAs quantum dot laser diodes operating in 1.36μm wavelength range

Electronics letters, 2006-07, Vol.42 (14), p.806-808

2006

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High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220-1240-nm Wavelength Range

IEEE photonics technology letters, 2008-11, Vol.20 (21), p.1766-1768

2008

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IEEE_Xplore

Improving Medication Reconciliation in the Outpatient Setting

Joint Commission journal on quality and patient safety, 2007-05, Vol.33 (5), p.286-292

2007

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1240nm high-power GaInNAs laser diodes

Optics express, 2007-11, Vol.15 (23), p.15187-15192

2007

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GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

Applied physics letters, 2012-04, Vol.100 (17), p.172113-172113-3

2012

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Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Applied physics letters, 2010-01, Vol.96 (4)

2010

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Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 µm

Electronics letters, 2008-06, Vol.44 (12), p.1

2008

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Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

Electronics letters, 2008-06, Vol.44 (12), p.1-1

2008

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Room-temperature singlemode continuous-wave operation of distributed feedback GalnNAs laser diodes at 1.5 μm

Electronics letters, 2008, Vol.44 (12), p.737-738

2008

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Time resolved photoluminescence of In(N)As quantum dots embeddedin GaIn(N)As/GaAs quantum well

Applied physics letters, 2010-01, Vol.96 (4), p.041911-041911-3

2010

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High-Temperature Continuous-Wave Operation of GaInAsN-GaAs Quantum-Dot Laser Diodes Beyond 1.3 \mum

IEEE photonics technology letters, 2007-07, Vol.19 (14), p.1030-1032

2007

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IEEE_Xplore

High-Temperature Continuous-Wave Operation of GaInAsN-GaAs Quantum-Dot Laser Diodes Beyond 1.3 [mu]m

IEEE photonics technology letters, 2007-07, Vol.19 (14), p.1030-1032

2007

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Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells

Applied physics letters, 2007-05, Vol.90 (22)

2007

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Subclinical Abnormalities in Sarcoplasmic Reticulum Ca2+ Release Promote Eccentric Myocardial Remodeling and Pump Failure Death in Response to Pressure Overload

Journal of the American College of Cardiology, 2014-04, Vol.63 (15), p.1569-1579

2014

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High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220a1240-nm Wavelength Range

IEEE photonics technology letters, 2008-01, Vol.20 (21)

2008

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GaInAsN/GaAs quantum dot laser diodes operating in 1.36mum wavelength range

Electronics letters, 2006-07, Vol.42 (14), p.806-808

2006

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GaInAsN/GaAs quantum dot laser diodes operating in 1.36 µm wavelength range

Electronics letters, 2006-07, Vol.42 (14), p.1

2006

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GaInAsN/GaAs quantum dot laser diodes operating in 1.36 mu m wavelength range

Electronics letters, 2006-07, Vol.42 (14), p.1-1

2006

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Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

Journal of applied physics, 2007-06, Vol.101 (11), p.113539-113539-4

2007

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Contactless electroreflectance investigation of energy levels in a 1.3 μ m emitting laser structure with the gain medium composed of InAsN quantum dots embedded in Ga In N As ∕ Ga As quantum wells

Applied physics letters, 2007-06, Vol.90 (22), p.221112-221112-3

2007

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GaInAsN/GaAs quantum dot laser diodes operating in 1.36 [micro sign]m wavelength range

Electronics letters, 2006, Vol.42 (14), p.806

2006

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A Biochemical Sensor Based on a Sensing Waveguide With Efficient Analyte Overlap and a Single-Mode DFB Laser

GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 $\mu$m

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 [micro sign]m

GaInAsN/GaAs quantum dot laser diodes operating in 1.36μm wavelength range

High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220-1240-nm Wavelength Range

Improving Medication Reconciliation in the Outpatient Setting

1240nm high-power GaInNAs laser diodes

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 µm

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

Room-temperature singlemode continuous-wave operation of distributed feedback GalnNAs laser diodes at 1.5 μm

Time resolved photoluminescence of In(N)As quantum dots embeddedin GaIn(N)As/GaAs quantum well

High-Temperature Continuous-Wave Operation of GaInAsN-GaAs Quantum-Dot Laser Diodes Beyond 1.3 \mum

High-Temperature Continuous-Wave Operation of GaInAsN-GaAs Quantum-Dot Laser Diodes Beyond 1.3 [mu]m

Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells

Subclinical Abnormalities in Sarcoplasmic Reticulum Ca2+ Release Promote Eccentric Myocardial Remodeling and Pump Failure Death in Response to Pressure Overload

High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220a1240-nm Wavelength Range

GaInAsN/GaAs quantum dot laser diodes operating in 1.36mum wavelength range

GaInAsN/GaAs quantum dot laser diodes operating in 1.36 µm wavelength range

GaInAsN/GaAs quantum dot laser diodes operating in 1.36 mu m wavelength range

Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

Contactless electroreflectance investigation of energy levels in a 1.3 μ m emitting laser structure with the gain medium composed of InAsN quantum dots embedded in Ga In N As ∕ Ga As quantum wells

GaInAsN/GaAs quantum dot laser diodes operating in 1.36 [micro sign]m wavelength range

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