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Reliability and parasitic issues in GaN-based power HEMTs: a review

Semiconductor science and technology, 2016-08, Vol.31 (9), p.93004

2016

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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Applied physics letters, 2016-03, Vol.108 (11)

2016

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Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Applied physics letters, 2014-04, Vol.104 (14)

2014

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Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Microelectronic engineering, 2013-09, Vol.109, p.257-261

2013

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Proton induced trapping effect on space compatible GaN HEMTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2213-2216

2014

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Sequential binding of UV DNA damage binding factor and degradation of the p48 subunit as early events after UV irradiation

Nucleic acids research, 2002-06, Vol.30 (11), p.2588

2002

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Field plate related reliability improvements in GaN-on-Si HEMTs

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2153-2158

2012

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True XP group E patients have a defective UV-damaged DNA binding protein complex and mutations in DDB2 which reveal the functional domains of its p48 product

Human molecular genetics, 2003-07, Vol.12 (13), p.1507-1522

2003

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Instability of Dynamic- R and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3126-3131

2017

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Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2199-2207

2014

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Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.61-64

2013

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Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.CD.2.1-CD.2.4

2012

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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1692-1696

2015

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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Solid-state electronics, 2015-11, Vol.113, p.9-14

2015

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The$DDB1-CUL4A^{DDB2}$Ubiquitin Ligase Is Deficient in Xeroderma Pigmentosum Group E and Targets Histone H2A at UV-Damaged DNA Sites

Proceedings of the National Academy of Sciences - PNAS, 2006-02, Vol.103 (8), p.2588-2593

2006

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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1662-1666

2015

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High-voltage double-pulsed measurement system for GaN-based power HEMTs

2014 IEEE International Reliability Physics Symposium, 2014, p.CD.11.1-CD.11.4

2014

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Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.257-261

2013

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Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.389-392

2014

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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

2015 IEEE International Reliability Physics Symposium, 2015, p.2E.2.1-2E.2.6

2015

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Radiation Therapy in Primary Mediastinal B-Cell Lymphoma With Positron Emission Tomography Positivity After Rituximab Chemotherapy

International journal of radiation oncology, biology, physics, 2013-10, Vol.87 (2), p.311-316

2013

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Bleeding Rate During Oral Surgery of Oral Anticoagulant Therapy Patients With Associated Systemic Pathologic Entities: A Prospective Study of More Than 500 Extractions

Journal of oral and maxillofacial surgery, 2014-05, Vol.72 (5), p.858-867

2014

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Average cost optimal policy for a stochastic two-machine flowshop with limited work-in-process

Nonlinear analysis, 2001-08, Vol.47 (8), p.5671-5678

2001

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Field-dependent degradation mechanisms in GaN-based HEMTs

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2016, p.77-80

2016

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Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements

2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p.136-139

2015

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Reliability and parasitic issues in GaN-based power HEMTs: a review

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Proton induced trapping effect on space compatible GaN HEMTs

Sequential binding of UV DNA damage binding factor and degradation of the p48 subunit as early events after UV irradiation

Field plate related reliability improvements in GaN-on-Si HEMTs

True XP group E patients have a defective UV-damaged DNA binding protein complex and mutations in DDB2 which reveal the functional domains of its p48 product

Instability of Dynamic- R and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

The$DDB1-CUL4A^{DDB2}$Ubiquitin Ligase Is Deficient in Xeroderma Pigmentosum Group E and Targets Histone H2A at UV-Damaged DNA Sites

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

High-voltage double-pulsed measurement system for GaN-based power HEMTs

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress: Insulating Films on Semiconductors 2013

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Radiation Therapy in Primary Mediastinal B-Cell Lymphoma With Positron Emission Tomography Positivity After Rituximab Chemotherapy

Bleeding Rate During Oral Surgery of Oral Anticoagulant Therapy Patients With Associated Systemic Pathologic Entities: A Prospective Study of More Than 500 Extractions

Average cost optimal policy for a stochastic two-machine flowshop with limited work-in-process

Field-dependent degradation mechanisms in GaN-based HEMTs

Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements

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