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Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

Science (American Association for the Advancement of Science), 2009-11, Vol.326 (5955), p.980-984

2009

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Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Thermal conductivity of phase-change material Ge2Sb2Te5

Applied physics letters, 2006-10, Vol.89 (15)

2006

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Evolution of subcritical nuclei in nitrogen-alloyed Ge2Sb2Te5

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Fluctuation Transmission Electron Microscopy: Detecting Nanoscale Order in Disordered Structures

Chemphyschem, 2010-08, Vol.11 (11), p.2311-2317

2010

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Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Two forms of nanoscale order in amorphous GexSe1−x alloys

Applied physics letters, 2013-09, Vol.103 (13)

2013

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Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te

Journal of applied physics, 2013-07, Vol.114 (3)

2013

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Micro-optical lenslets by photo-expansion in chalcogenide glasses

Journal of lightwave technology, 1997-08, Vol.15 (8), p.1371-1377

1997

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Nanoscale order and crystallization in nitrogen-alloyed amorphous GeTe

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.260-270

2005

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Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Response to "Comment on 'Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic,and hexagonal phases'" [ J. Appl. Phys. 97 , 093509 ( 2005 ) ]

Journal of applied physics, 2007-01, Vol.101 (2), p.026112-026112-1

2007

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Response to “Comment on ‘Investigation of the optical and electronicproperties of Ge2Sb2Te5phase change material in its amorphous, cubic, and hexagonal phases’” [J. Appl. Phys.97, 093509(2005)]

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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Thermal conductivity of phase-change material Ge 2 Sb 2 Te 5

Applied physics letters, 2006-10, Vol.89 (15), p.151904-151904-3

2006

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Nanometer-scale order in amorphous Ge 2 Sb 2 Te 5 analyzed by fluctuation electron microscopy

Applied physics letters, 2007-01, Vol.90 (2), p.021923-021923-3

2007

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Response to “Comment on ‘Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases’” [J. Appl. Phys. 97, 093509 (2005)]

Journal of applied physics, 2007-01, Vol.101 (2), p.26112

2007

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Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic, and hexagonal phases

Journal of applied physics, 2005-04, Vol.97 (9), p.093509-093509-8

2005

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The engineering research center for compound semiconductor microelectronics

Proceedings of the IEEE, 1993-01, Vol.81 (1), p.132-151

1993

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Excimer laser annealing of Er-implanted GaN

Journal of applied physics, 2001-09, Vol.90 (6), p.2760-2763

2001

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Photo-oxidation and the Absence of Photodarkening in Ge2Sb2Te5 Phase Change Material

MRS proceedings, 2006, Vol.918

2006

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Photo-oxidation and the Absence of Photodarkening in Ge 2 Sb 2 Te 5 Phase Change Material

MRS proceedings, 2006, Vol.918, Article 0918-H02-04

2006

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Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er and Er-implanted GaN

MRS proceedings, 2000, Vol.639

2000

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Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Thermal conductivity of phase-change material Ge2Sb2Te5

Evolution of subcritical nuclei in nitrogen-alloyed Ge2Sb2Te5

Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

Fluctuation Transmission Electron Microscopy: Detecting Nanoscale Order in Disordered Structures

Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy

Two forms of nanoscale order in amorphous GexSe1−x alloys

Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te

Micro-optical lenslets by photo-expansion in chalcogenide glasses

Nanoscale order and crystallization in nitrogen-alloyed amorphous GeTe

Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe

Response to "Comment on 'Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic,and hexagonal phases'" [ J. Appl. Phys. 97 , 093509 ( 2005 ) ]

Response to “Comment on ‘Investigation of the optical and electronicproperties of Ge2Sb2Te5phase change material in its amorphous, cubic, and hexagonal phases’” [J. Appl. Phys.97, 093509(2005)]

Thermal conductivity of phase-change material Ge 2 Sb 2 Te 5

Nanometer-scale order in amorphous Ge 2 Sb 2 Te 5 analyzed by fluctuation electron microscopy

Response to “Comment on ‘Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases’” [J. Appl. Phys. 97, 093509 (2005)]

Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic, and hexagonal phases

The engineering research center for compound semiconductor microelectronics

Excimer laser annealing of Er-implanted GaN

Photo-oxidation and the Absence of Photodarkening in Ge2Sb2Te5 Phase Change Material

Photo-oxidation and the Absence of Photodarkening in Ge 2 Sb 2 Te 5 Phase Change Material

Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er and Er-implanted GaN

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