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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

New journal of physics, 2022-10, Vol.24 (10), p.103027

2022

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Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Applied physics letters, 2000-04, Vol.76 (17), p.2403-2405

2000

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Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption

Journal of non-crystalline solids, 2000-05, Vol.266, p.876-883

2000

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Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Applied physics letters, 2000-04, Vol.76 (15), p.1999-2001

2000

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GaN epitaxial lateral overgrowth and optical characterization

Applied physics letters, 1998-08, Vol.73 (9), p.1179-1181

1998

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Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses

Journal of non-crystalline solids, 1999-03, Vol.244 (2-3), p.260-266

1999

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Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Applied physics letters, 1997-11, Vol.71 (18), p.2662-2664

1997

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Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Applied physics letters, 1997-07, Vol.71 (2), p.231-233

1997

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Optical characteristics of p -type GaN films grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 1996-10, Vol.69 (18), p.2722-2724

1996

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Band gap bowing in GaP1-xNx alloys

Applied physics letters, 1993-07, Vol.63 (2), p.208-210

1993

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Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.260-270

2005

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Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy

Journal of applied physics, 2002-05, Vol.91 (9), p.5716-5727

2002

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Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Applied physics letters, 1999-02, Vol.74 (7), p.1000-1002

1999

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Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Journal of applied physics, 2001-07, Vol.90 (1), p.252-259

2001

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Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses

Applied physics letters, 1999-01, Vol.74 (1), p.13-15

1999

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Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

Journal of applied physics, 1996-10, Vol.80 (8), p.4609-4614

1996

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Polarization study of single color centers in aluminum nitride

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses

Applied physics letters, 1995-02, Vol.66 (6), p.670-672

1995

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Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Applied physics letters, 2024-03, Vol.124 (12)

2024

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Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Journal of electronic materials, 1997-03, Vol.26 (3), p.306-310

1997

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Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN

Journal of electronic materials, 1999-03, Vol.28 (3), p.266-274

1999

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The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Applied physics letters, 1998-04, Vol.72 (16), p.1990-1992

1998

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Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition

Journal of applied physics, 1987-03, Vol.61 (5), p.2011-2016

1987

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Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 1997-12, Vol.182 (3), p.241-246

1997

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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

GaN epitaxial lateral overgrowth and optical characterization

Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses

Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Optical characteristics of p -type GaN films grown by plasma-assisted molecular beam epitaxy

Band gap bowing in GaP1-xNx alloys

Photoinduced integrated-optic devices in rapid thermally annealed chalcogenide glasses

Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy

Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses

Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

Polarization study of single color centers in aluminum nitride

Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses

Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN

The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition

Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

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