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Correlated insulator collapse due to quantum avalanche via in-gap ladder states

Nature communications, 2023-05, Vol.14 (1), p.2936-2936, Article 2936

2023

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Signature of Spin-Resolved Quantum Point Contact in p‑Type Trilayer WSe2 van der Waals Heterostructure

Nano letters, 2021-09, Vol.21 (18), p.7534-7541

2021

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Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

Applied physics letters, 2021-06, Vol.118 (26)

2021

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Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy

Nanotechnology, 2020-05, Vol.31 (20), p.205205-205205

2020

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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Nature communications, 2023-03, Vol.14 (1), p.1507-1507, Article 1507

2023

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Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors

ACS nano, 2016-10, Vol.10 (10), p.9730-9737

2016

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Moving towards the magnetoelectric graphene transistor

Applied physics letters, 2017-10, Vol.111 (18)

2017

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Towards a Strong Spin-Orbit Coupling Magnetoelectric Transistor

IEEE journal on exploratory solid-state computational devices and circuits, 2018-06, Vol.4 (1), p.1-9

2018

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Conductance fluctuations in graphene in the presence of long-range disorder

Journal of physics. Condensed matter, 2016-04, Vol.28 (13), p.135302-135302

2016

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The TeraNova platform: An integrated testbed for ultra-broadband wireless communications at true Terahertz frequencies

Computer networks (Amsterdam, Netherlands : 1999), 2020-10, Vol.179, p.107370, Article 107370

2020

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Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors

ACS nano, 2019-01, Vol.13 (1), p.803-811

2019

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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

ACS omega, 2019-02, Vol.4 (2), p.4082-4090

2019

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Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors

ACS nano, 2019-01, Vol.13 (1), p.803-811

2019

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Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI

Journal of physical chemistry. C, 2022-02, Vol.126 (4), p.1958-1965

2022

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Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics

Advanced materials (Weinheim), 2022-03, Vol.34 (12), p.e2105023-n/a

2022

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Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Small (Weinheim an der Bergstrasse, Germany), 2022-11, Vol.18 (46), p.e2204547-n/a

2022

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Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene

Nanoscale research letters, 2013-05, Vol.8 (1), p.214-214, Article 214

2013

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Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons

Nano letters, 2022-04, Vol.22 (7), p.2674-2681

2022

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Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”

ACS nano, 2019-08, Vol.13 (8), p.8498-8500

2019

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Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors'"

ACS nano, 2019-08, Vol.13 (8), p.8498-8500

2019

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Evaluating the performance of quantum point contacts as nanoscale terahertz sensors

Optics express, 2010-03, Vol.18 (5), p.4609-4614

2010

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GR-FET application for high-frequency detection device

Nanoscale research letters, 2013-01, Vol.8 (1), p.22-22, Article 22

2013

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Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DN05-04DN05-4

2012

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Covalent 2D Cr2Te3 ferromagnet

Materials research letters, 2021-05, Vol.9 (5), p.205-212

2021

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Correlated insulator collapse due to quantum avalanche via in-gap ladder states

Signature of Spin-Resolved Quantum Point Contact in p‑Type Trilayer WSe2 van der Waals Heterostructure

Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors

Moving towards the magnetoelectric graphene transistor

Towards a Strong Spin-Orbit Coupling Magnetoelectric Transistor

Conductance fluctuations in graphene in the presence of long-range disorder

The TeraNova platform: An integrated testbed for ultra-broadband wireless communications at true Terahertz frequencies

Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed

Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors

Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors

Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI

Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics

Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene

Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons

Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”

Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors'"

Evaluating the performance of quantum point contacts as nanoscale terahertz sensors

GR-FET application for high-frequency detection device

Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy

Covalent 2D Cr2Te3 ferromagnet

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