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Physica status solidi: October 16

G'rlich

2021

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Kristall und Technik. Band 8, Heft 1-3

2022

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Determination of the Concentration of Substitutional 0 in GaP by Means of Donor-Acceptor Pair Luminescence

October 16, 2021, Vol.43, Number 2, p.529-534

2021

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The Influence of Thermal Disorder on the Absorption Edge in the Tauc Region of a-Si:H

Physica status solidi. B. Basic research, 1990-08, Vol.160 (2), p.K183-K188

1990

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The Meyer- Neldel Rule and the Fundamental Pre-Exponential Factor in the Conductivity of a-Si:H

Physica status solidi. B. Basic research, 1986-07, Vol.136 (1), p.K61-K64

1986

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Relaxation and Recombination of Photoexcited Carriers in a-Si: H Calculated by Monte-Carlo Simulations

Physica status solidi. B. Basic research, 1992-03, Vol.170 (1), p.339-351

1992

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Defect density and photoelectrical properties of alternative doped amorphous silicon

Journal of non-crystalline solids, 1993-12, Vol.164, p.415-418

1993

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Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si:H

Journal of non-crystalline solids, 1993-12, Vol.164, p.603-606

1993

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Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering

Physica status solidi. A, Applied research, 1988-07, Vol.108 (1), p.285-293

1988

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The ordinary and generalized Meyer-Neldel rule in a-Si:H calculated by the statistical fermi level shift

Physica status solidi. B. Basic research, 1987-03, Vol.140 (1), p.K27-K31

1987

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Photoluminescence of nitrogen-doped VPE GaAs

Solid state communications, 1985-01, Vol.55 (2), p.167-173

1985

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Mobility-Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron

Physica status solidi. A, Applied research, 1993-03, Vol.136 (1), p.171-180

1993

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Enhancement of Photoconductivity in Magnetron-Sputtered a-Si:H Doped with Nitrogen

Physica status solidi. B. Basic research, 1989-06, Vol.153 (2), p.K119-K123

1989

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Defect Density of a-Si: H(B) Prepared at High Deposition Rate with Triethylboron

Physica status solidi. A, Applied research, 1992-11, Vol.134 (1), p.167-181

1992

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Deposition of a-Si:H by magnetron sputter-assisted plasma-CVD: preparation and physical properties

Journal of non-crystalline solids, 1987-09, Vol.93 (2-3), p.230-240

1987

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Photoelectrical properties of a-Si: H in dependence on growth conditions and degradation

Physica status solidi. A, Applied research, 1993-07, Vol.138 (1), p.207-215

1993

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Electron-hole liquid in GaP the influence of the isoelectronic impurity nitrogen

physica status solidi (b), 1979-10, Vol.95 (2), p.571-583

1979

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Energy States of Isolated Donor-Acceptor Pairs and the Influence of Polarization Interaction on the Pair Energy

Physica Status Solidi. B: Basic Solid State Physics, 1973-04, Vol.56 (2), p.563-572

1973

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Luminescence from electron-hole liquid in gallium phosphide influenced by the isoelectronic impurity nitrogen

Journal of luminescence, 1979, Vol.18, p.537-541

1979

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Luminescence from Electron-Hole Drops in Undoped GaP

physica status solidi (b), 1978-10, Vol.89 (2), p.561-570

1978

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Decay kinetics and phase behaviour of a dense carrier system in GaP:N

Journal of luminescence, 1981-01, Vol.24, p.577-580

1981

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Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP

Physica status solidi. A, Applied research, 1974-08, Vol.24 (2), p.K189-K192

1974

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Radiative recombination from electron-hole drops in n-doped GaP

Physics letters. A, 1977-01, Vol.64 (2), p.226-228

1977

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Luminescence from an Electron-Hole Liquid in the Indirect Compound Ga(As1−xPx)

physica status solidi (b), 1980-10, Vol.101 (2), p.541-546

1980

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Studies of Surface Recombination Processes in Photo-Excited VPE-GaP:N, Te

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.553-561

1982

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Physica status solidi: October 16

Kristall und Technik. Band 8, Heft 1-3

Determination of the Concentration of Substitutional 0 in GaP by Means of Donor-Acceptor Pair Luminescence

The Influence of Thermal Disorder on the Absorption Edge in the Tauc Region of a-Si:H

The Meyer- Neldel Rule and the Fundamental Pre-Exponential Factor in the Conductivity of a-Si:H

Relaxation and Recombination of Photoexcited Carriers in a-Si: H Calculated by Monte-Carlo Simulations

Defect density and photoelectrical properties of alternative doped amorphous silicon

Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si:H

Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering

The ordinary and generalized Meyer-Neldel rule in a-Si:H calculated by the statistical fermi level shift

Photoluminescence of nitrogen-doped VPE GaAs

Mobility-Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron

Enhancement of Photoconductivity in Magnetron-Sputtered a-Si:H Doped with Nitrogen

Defect Density of a-Si: H(B) Prepared at High Deposition Rate with Triethylboron

Deposition of a-Si:H by magnetron sputter-assisted plasma-CVD: preparation and physical properties

Photoelectrical properties of a-Si: H in dependence on growth conditions and degradation

Electron-hole liquid in GaP the influence of the isoelectronic impurity nitrogen

Energy States of Isolated Donor-Acceptor Pairs and the Influence of Polarization Interaction on the Pair Energy

Luminescence from electron-hole liquid in gallium phosphide influenced by the isoelectronic impurity nitrogen

Luminescence from Electron-Hole Drops in Undoped GaP

Decay kinetics and phase behaviour of a dense carrier system in GaP:N

Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP

Radiative recombination from electron-hole drops in n-doped GaP

Luminescence from an Electron-Hole Liquid in the Indirect Compound Ga(As1−xPx)

Studies of Surface Recombination Processes in Photo-Excited VPE-GaP:N, Te

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