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Sc2CX (X=N2, ON, O2) MXenes as a promising anode material: A first-principles study

Journal of applied physics, 2023-01, Vol.133 (4)

2023

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Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc2CXT, X = O, F, OH; T = C, S, N

Physical chemistry chemical physics : PCCP, 2023-01, Vol.25 (3), p.1881-1888

2023

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Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc 2 CXT, X = O, F, OH; T = C, S, N

Physical chemistry chemical physics : PCCP, 2023-01, Vol.25 (3), p.1881-1888

2023

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MXene-based Ti2C/Ta2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

RSC advances, 2023-06, Vol.13 (25), p.17222-17229

2023

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MXene-based Ti 2 C/Ta 2 C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

RSC advances, 2023-06, Vol.13 (25), p.17222-17229

2023

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Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy

Nanotechnology, 2016-03, Vol.27 (10), p.105702-105702

2016

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Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

Nature materials, 2005-07, Vol.4 (7), p.534-539

2005

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Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of ScCXT, X = O, F, OH; T = C, S, N

Physical chemistry chemical physics : PCCP, 2023-01, Vol.25 (3), p.1881-1888

2023

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Surface roughness scattering model for arbitrarily oriented silicon nanowires

Journal of applied physics, 2011-10, Vol.110 (8), p.084514-084514-6

2011

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MXene-based TiC/TaC lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

RSC advances, 2023-06, Vol.13 (25), p.17222-17229

2023

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Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

Solid-state electronics, 2011-12, Vol.65-66, p.88-93

2011

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Anderson localization regime in carbon nanotubes: size dependent properties

Journal of physics. Condensed matter, 2008-07, Vol.20 (30), p.304211-304211 (7)

2008

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Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics

Physica Status Solidi (b), 2010-12, Vol.247 (11-12), p.2962-2967

2010

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Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects

Physical review letters, 2008-01, Vol.100 (3), p.036803-036803, Article 036803

2008

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Theoretical characterisation of point defects on a MoS sub(2) monolayer by scanning tunnelling microscopy

Nanotechnology, 2016-03, Vol.27 (10), p.105702-105713

2016

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Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy

Journal of physical chemistry. C, 2016-08, Vol.120 (30), p.17115-17126

2016

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Reactivity Enhancement and Fingerprints of Point Defects on a MoS 2 Monolayer Assessed by ab Initio Atomic Force Microscopy

Journal of physical chemistry. C, 2016-08, Vol.120 (30), p.17115-17126

2016

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Theoretical characterisation of point defects on a MoS 2 monolayer by scanning tunnelling microscopy

Nanotechnology, 2016-03, Vol.27 (10), p.105702

2016

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Nonperturbative indirect exchange in spin valley coupled two-dimensional crystals

Physical review. B, 2023-10, Vol.108 (14), Article 144408

2023

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Anderson localization in carbon nanotubes : Defect density and temperature effects

Physical review letters, 2005-12, Vol.95 (26), p.266801.1-266801.4, Article 266801

2005

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Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity

Applied surface science, 2004-07, Vol.234 (1), p.341-348

2004

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Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces

Microelectronic engineering, 2013-09, Vol.109, p.286-289

2013

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Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3350-3357

2011

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Analyzing the Architectural Support of Usability

2010 36th EUROMICRO Conference on Software Engineering and Advanced Applications, 2010, p.20-27

2010

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Handling backtracking in Web applications

Proceedings. 30th Euromicro Conference, 2004, 2004, p.388-395

2004

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Sc2CX (X=N2, ON, O2) MXenes as a promising anode material: A first-principles study

Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc2CXT, X = O, F, OH; T = C, S, N

Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc 2 CXT, X = O, F, OH; T = C, S, N

MXene-based Ti2C/Ta2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

MXene-based Ti 2 C/Ta 2 C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy

Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of ScCXT, X = O, F, OH; T = C, S, N

Surface roughness scattering model for arbitrarily oriented silicon nanowires

MXene-based TiC/TaC lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy

Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

Anderson localization regime in carbon nanotubes: size dependent properties

Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics

Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects

Theoretical characterisation of point defects on a MoS sub(2) monolayer by scanning tunnelling microscopy

Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy

Reactivity Enhancement and Fingerprints of Point Defects on a MoS 2 Monolayer Assessed by ab Initio Atomic Force Microscopy

Theoretical characterisation of point defects on a MoS 2 monolayer by scanning tunnelling microscopy

Nonperturbative indirect exchange in spin valley coupled two-dimensional crystals

Anderson localization in carbon nanotubes : Defect density and temperature effects

Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity

Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

Analyzing the Architectural Support of Usability

Handling backtracking in Web applications

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